Volume 57; Issue 5

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Applied Physics Letters
Volume 57; Issue 5

Applied Physics Letters

Volume 57; Issue 5

1

Measurement of plasma-neutralized super-vacuum currents in a gyrotron configuration

Kirkpatrick, D. A., Gold, S. H., Manheimer, W. M., Black, W. M., Kinkead, A. K., Hardesty, D. L., Killian, K. W., Sucy, M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 595 KB

english, 1990

2

Structure of the ZnSe/GaAs heteroepitaxial interface

Li, D., Gonsalves, J. M., Otsuka, N., Qiu, J., Kobayashi, M., Gunshor, R. L.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 730 KB

english, 1990

3

Clean grain boundaries and weak links in high Tc superconducting YBa2Cu3O7−x thin films

Shin, D. H., Silcox, J., Russek, S. E., Lathrop, D. K., Moeckly, B., Buhrman, R. A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 643 KB

english, 1990

4

Large critical current densities in YBa2Cu3O7−x thin films made at high deposition rates

Wu, X. D., Muenchausen, R. E., Foltyn, S., Estler, R. C., Dye, R. C., Garcia, A. R., Nogar, N. S., England, P., Ramesh, R., Hwang, D. M., Ravi, T. S., Chang, C. C., Venkatesan, T., Xi, X. X., Li, Q.,

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 575 KB

english, 1990

5

Band offsets and exciton confinement in Zn1−yCdySe/Zn1−xMnxSe quantum wells

Wal̸ecki, W. J., Nurmikko, A. V., Samarth, N., Luo, H., Furdyna, J. K., Otsuka, N.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 599 KB

english, 1990

6

High current plasma based electron source

Bauer, H. R., Gundersen, M. A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 597 KB

english, 1990

7

Pressure dependence of the intersubband transition in strained In0.15Ga0.85As/GaAs multiple quantum wells

Shan, W., Fang, X. M., Li, D., Jiang, S., Shen, S. C., Hou, H. Q., Feng, W., Zhou, J. M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 642 KB

english, 1990

8

Investigation of laser-surface interactions and optical damage mechanisms using excitation by pairs of picosecond laser pulses

Chase, L. L., Lee, H. W. H., Hughes, Robert S.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 556 KB

english, 1990

9

Effect of base doping gradients on the electrical performance of AlGaAs/GaAs heterojunction bipolar transistors

Mohammad, S. Noor, Chen, J., Chyi, J-I., Morkoç, H.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 638 KB

english, 1990

10

Modulation-doped AlInAs/InP heterostructures grown by organometallic vapor phase epitaxy

Aina, Leye, Mattingly, Mike, Potter, Bob

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 417 KB

english, 1990

11

Cryogenic reactive ion etching of silicon in SF6

Bestwick, Tim D., Oehrlein, Gottlieb S., Angell, David

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 609 KB

english, 1990

12

Quantum transport in ultrathin CoSi2 epitaxial films

DiTusa, J. F., Parpia, J. M., Phillips, Julia M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 596 KB

english, 1990

13

Tests of a superconducting rf quadrupole device

Delayen, J. R., Shepard, K. W.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 621 KB

english, 1990

14

Effects of lattice mismatch on InxGa1−xAs/InP heterojunctions

Lee, C. D., Forrest, S. R.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 657 KB

english, 1990

15

Time and injection rate dependence of minority-carrier diffusion length in solar cells irradiated with x rays

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 457 KB

english, 1990

16

Spatial resolution of the capacitance-voltage profiling technique on semiconductors with quantum confinement

Schubert, E. F., Kopf, R. F., Kuo, J. M., Luftman, H. S., Garbinski, P. A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 559 KB

english, 1990

17

Metalorganic vapor phase epitaxial growth of high quality InGaAs on InP using tertiarybutylarsine

Abdalla, M. I., Kenneson, D. G., Powazinik, W., Koteles, E. S.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 462 KB

english, 1990

18

Role of long-lived species in pulsed hollow cathode discharges in N2

Choi, P., Kaufman, Y., Aliaga, R.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 522 KB

english, 1990

19

Electron beam irradiation enhancement of Al-Ga interdiffusion at GaAs/AlGaAs quantum well interfaces

Li, Y. J., Tsuchiya, M., Petroff, P. M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 545 KB

english, 1990

20

High quality hydrogenated amorphous silicon films by windowless hydrogen discharge

Yoshida, Akira, Inoue, Katsushi, Ohashi, Haruhiko, Saito, Yoji

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 410 KB

english, 1990

21

Anisotropic transport and cation disorder in superconducting Tl2Ca2Ba2Cu3Ox single crystals

Tigges, C. P., Venturini, E. L., Kwak, J. F., Morosin, B., Baughman, R. J., Ginley, D. S.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 532 KB

english, 1990

22

Effects of reactive versus unreactive metals on the surface recombination velocity at CdS and CdSe(112̄0) interfaces

Rosenwaks, Y., Burstein, L., Shapira, Y., Huppert, D.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 576 KB

english, 1990

23

Observation of optical bistability by charge-induced self-feedback in biased AlGaAs multiple quantum well structures

Obata, K., Yamanishi, M., Yamaoka, Y., Kan, Y., Hayashi, J., Suemune, I.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 624 KB

english, 1990

24

YBa2Cu3O7−δ superconducting films with low microwave surface resistance over large areas

Newman, N., Char, K., Garrison, S. M., Barton, R. W., Taber, R. C., Eom, C. B., Geballe, T. H., Wilkens, B.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 579 KB

english, 1990

25

Calorimetric absorption spectroscopy of free and bound excitons in CdS at millikelvin temperatures

Podlowski, L., Gutowski, J., Broser, I.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 508 KB

english, 1990

26

Ion implanted confinement layer for an InP/InGaAs/InP:Fe heterojunction field-effect transistor

Lauterbach, Ch., Römer, D., Treichler, R.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 462 KB

english, 1990

27

Erratum: Electrical properties of hydrogenated diamond [Appl. Phys. Lett. 56, 1454 (1990)]

Albin, Sacharia, Watkins, Linwood

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 300 KB

english, 1990

28

Long-wavelength infrared detection in a Kastalsky-type superlattice structure

O, Byungsung, Choe, J.-W., Francombe, M. H., Bandara, K. M. S. V., Coon, D. D., Lin, Y. F., Takei, W. J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 604 KB

english, 1990

29

High-gain photorefractive two-beam coupling in semi-insulating GaAs with pump-controlled suppression of the Schottky barrier

Chomsky, Doron, Sternklar, Shmuel, Zigler, Arie, Jackel, Steven

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 480 KB

english, 1990

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