Volume 57; Issue 6

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Applied Physics Letters
Volume 57; Issue 6

Applied Physics Letters

Volume 57; Issue 6

1

Optical and structural characterization of evaporated zirconia films

Krishna, M. Ghanashyam, Rao, K. Narasimha, Mohan, S.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 528 KB

english, 1990

2

Intracavity frequency doubling of a Nd:YAG laser with an organic nonlinear optical crystal

Ducharme, Stephen, Risk, W. P., Moerner, W. E., Lee, Victor Y., Twieg, R. J., Bjorklund, G. C.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 634 KB

english, 1990

3

Ferroelectric (Pb,Ba)Nb2O6 near the morphotropic phase boundary

Burns, G., Dacol, F. H., Guo, R., Bhalla, A. S.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 449 KB

english, 1990

4

24% efficient silicon solar cells

Wang, A., Zhao, J., Green, M. A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 524 KB

english, 1990

5

Epitaxial growth of diamond thin films on cubic boron nitride {111} surfaces by dc plasma chemical vapor deposition

Koizumi, S., Murakami, T., Inuzuka, T., Suzuki, K.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 576 KB

english, 1990

6

Large photoconductive gain in quantum well infrared photodetectors

Hasnain, G., Levine, B. F., Gunapala, S., Chand, Naresh

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 562 KB

english, 1990

7

InxGa1−xAs/GaAs multiple quantum well optical modulators for the 1.02–1.07 μm wavelength range

Woodward, T. K., Sizer, Theodore, Sivco, D. L., Cho, A. Y.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 636 KB

english, 1990

8

Confinement of charge carriers and molecular excitons within 5-nm-thick emitter layer in organic electroluminescent devices with a double heterostructure

Adachi, Chihaya, Tsutsui, Tetsuo, Saito, Shogo

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 511 KB

english, 1990

9

Anisotropic etching of n+ polycrystalline silicon with high selectivity using a chlorine and nitrogen plasma in an ultraclean electron cyclotron resonance etcher

Uetake, Hiroaki, Matsuura, Takashi, Ohmi, Tadahiro, Murota, Junichi, Fukuda, Koichi, Mikoshiba, Nobuo

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 581 KB

english, 1990

10

Transient nonlinear optical properties of δ-doped asymmetric superlattices measured by picosecond electro-optic sampling

Ralph, Stephen E., Capasso, Federico, Malik, Roger J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 652 KB

english, 1990

11

Role of step-flow dynamics in interface roughening and in the spontaneous formation of InGaAs/InP wire-like arrays

Cox, H. M., Aspnes, D. E., Allen, S. J., Bastos, P., Hwang, D. M., Mahajan, S., Shahid, M. A., Morais, P. C.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 631 KB

english, 1990

12

Grain growth kinetics during ion beam irradiation of chemical vapor deposited amorphous silicon

Spinella, C., Lombardo, S., Campisano, S. U.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 556 KB

english, 1990

13

Reconfigurable optical interconnection using a two-dimensional vertical to surface transmission electrophotonic device array

Ogura, Ichiro, Tashiro, Yoshiharu, Kawai, Shigeru, Yamada, Keiji, Sugimoto, Mitsunori, Kubota, Keiichi, Kasahara, Kenichi

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 553 KB

english, 1990

14

Atomic-scale roughness of GaAs/AlAs interfaces: A Raman scattering study of asymmetrical short-period superlattices

Jusserand, Bernard, Mollot, Francis, Moison, Jean-Marie, Le Roux, Guy

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 654 KB

english, 1990

15

Comment on ‘‘Observation of magnetic hysteresis loop of the perminvar type in worked Co-based amorphous alloys’’[Appl. Phys. Lett. 36, 339 (1980)]

Tejedor, M., Rubio, H.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 373 KB

english, 1990

16

Excitation intensity dependence of photoluminescence in Ga0.52In0.48P

DeLong, M. C., Taylor, P. C., Olson, J. M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 622 KB

english, 1990

17

Indirect stimulated emission at room temperature

Rinker, M., Kalt, H., Köhler, K.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 439 KB

english, 1990

18

Observation of electron velocity overshoot in AlxGa1−xAs/GaAs heterostructure insulated-gate field-effect transistors

Sun, C. C., Xu, J. M., Hagley, A., Surridge, R., SpringThorpe, A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 506 KB

english, 1990

19

Room-temperature operation of an InGaAsP double-heterostructure laser emitting at 1.55 μm on a Si substrate

Sugo, Mitsuru, Mori, Hidefumi, Tachikawa, Masami, Itoh, Yoshio, Yamamoto, Mitsuo

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 468 KB

english, 1990

20

CaNdAlO4 perovskite substrate for microwave and far-infrared applications of epitaxial high Tc superconducting thin films

Berkowski, M., Pajaczkowska, A., Gierl̸owski, P., Lewandowski, S. J., Sobolewski, R., Gorshunov, B. P., Kozlov, G. V., Lyudmirsky, D. B., Sirotinsky, O. I., Saltykov, P. A., Soltner, H., Poppe, U., Bu

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 516 KB

english, 1990

21

Pulsed laser heating measurement of relaxation-induced melting point increase in amorphous Si

Grimaldi, M. G., Baeri, P.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 599 KB

english, 1990

22

Valley current density activation energy and effective longitudinal optical phonon energy in triple well asymmetric resonant tunneling diode

Bolognesi, C. R., Mand, R. S., Boothroyd, A. R.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 554 KB

english, 1990

23

Fabrication of ultrasmall Nb-AlOx-Nb Josephson tunnel junctions

Martinis, John M., Ono, R. H.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 634 KB

english, 1990

24

Low temperature and selective growth of β-SiC using the SiH2Cl2/i-C4H10/HCl/H2 gas system

Ohshita, Yoshio

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 533 KB

english, 1990

25

Demonstration of the effects of interface strain on band offsets in lattice-matched III-V semiconductor superlattices

Nelson, J. S., Kurtz, S. R., Dawson, L. R., Lott, J. A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 551 KB

english, 1990

26

Sweeping photoreflectance spectroscopy of semiconductors

Shen, H., Dutta, M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 545 KB

english, 1990

27

Reduction reaction of native oxide at the initial stage of GeH4 chemical vapor deposition on (100) Si

Takahasi, Yasuo, Ishii, Hiromu, Fujinaga, Kiyohisa

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 502 KB

english, 1990

28

Analytical technique for determining the polarization dependence of optical matrix elements in quantum wires with band-coupling effects

Sercel, Peter C., Vahala, Kerry J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 607 KB

english, 1990

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