Volume 57; Issue 9

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Applied Physics Letters
Volume 57; Issue 9

Applied Physics Letters

Volume 57; Issue 9

1

Calibration of the Raman spectrum to the oxygen stoichiometry of nanophase TiO2

Parker, J. C., Siegel, R. W.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 546 KB

english, 1990

2

Influence of oxygen pressure on laser ablation of YBa2Cu3O7-x

Scott, K., Huntley, J. M., Phillips, W. A., Clarke, John, Field, J. E.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 583 KB

english, 1990

3

Photorefractivity at 1.5 μm in CdTe:V

Partovi, Afshin, Millerd, James, Garmire, Elsa M., Ziari, Mehrdad, Steier, William H., Trivedi, Sudhir B., Klein, Marvin B.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 635 KB

english, 1990

4

Synthesis of YBa2Cu4O8 at one atmosphere oxygen pressure by the modified citrate gel process

Liu, R. S., Janes, R., Bennett, M. J., Edwards, P. P.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 391 KB

english, 1990

5

Photoconductivity of chemically deposited CdS:Y films

Bhushan, S., Sharma, S. K.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 534 KB

english, 1990

6

Deep energy levels of substitutional impurity pairs in the wurtzite semiconductor ZnS

Wu, Xiaojiang, Huang, Mingzhu, Ren, Shang Yuan

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 456 KB

english, 1990

7

Effect of low-level boron doping and its implication to the nature of gap states in hydrogenated amorphous silicon

Yang, Liyou, Catalano, A., Arya, R. R., Balberg, I.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 582 KB

english, 1990

8

Growth characteristics of silicon dioxide produced by rapid thermal oxidation processes

Chiou, Y. L., Sow, C. H., Li, G., Ports, K. A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 515 KB

english, 1990

9

Single-crystal Sn/Ge superlattices on Ge substrates: Growth and structural properties

Wegscheider, W., Eberl, K., Menczigar, U., Abstreiter, G.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 660 KB

english, 1990

10

Atomically layered heteroepitaxial growth of single-crystal films of superconducting Bi2Sr2Ca2Cu3Ox

Eckstein, J. N., Bozovic, I., von Dessonneck, K. E., Schlom, D. G., Harris, J. S., Baumann, S. M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 675 KB

english, 1990

11

As-grown superconducting thin films of Bi(Pb)-Sr-Ca-Cu-O by magnetron sputtering

Hakuraku, Y., Higo, S., Ogushi, T.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 570 KB

english, 1990

12

H− production from a barium converter with different discharge configurations

van Os, C. F. A., Leung, K. N., Kunkel, W. B.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 497 KB

english, 1990

13

MeV oxygen ion implantation induced compositional intermixing in AlAs/GaAs superlattices

Xiong, Fulin, Tombrello, T. A., Schwartz, C. L., Schwarz, S. A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 581 KB

english, 1990

14

Temperature dependence of microwave losses in Y-Ba-Cu-O films

Pakulis, E. J., Sandstrom, R. L., Chaudhari, P., Laibowitz, R. B.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 436 KB

english, 1990

15

Laser desorption mass spectra of YBa2Cu3O7−x

Chen, C. H., Murphy, T. M., Phillips, R. C.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 493 KB

english, 1990

16

Optical technique for the measurement of turbulent spectra using the photorefractive properties of BaTiO3

Albrecht, G. F., Robey, H. F., Moore, T. R.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 498 KB

english, 1990

17

Analysis of a cascade-pumped 16 μm CO2-N2 downstream-mixing gasdynamic laser

Chakravarty, Purandar, Reddy, N. M., Reddy, K. P. J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 477 KB

english, 1990

18

Cathodoluminescence observation of extended monolayer-flat terraces at the heterointerface of GaInAs/InP single quantum wells grown by metalorganic vapor phase epitaxy

Nilsson, S., Gustafsson, A., Samuelson, L.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 628 KB

english, 1990

19

Location of energy levels of oxygen-vacancy complex in GaAs

Skowronski, M., Neild, S. T., Kremer, R. E.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 507 KB

english, 1990

20

Selective epitaxial growth with oxide-polycrystalline silicon-oxide masks by rapid thermal processing chemical vapor deposition

Hsieh, T. Y., Jung, K. H., Kwong, D. L., Spratt, D. B.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 627 KB

english, 1990

21

Magnetic relaxation in the 110 K superconducting phase in Bi-Sr-Ca-Cu-O thin films

Tanaka, Atsushi, Crain, Jason, Niwa, Koichi

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 447 KB

english, 1990

22

Epitaxial growth of Bi-Sr-Ca-Cu-O superconducting thin films by metalorganic chemical vapor deposition

Sugimoto, T., Yoshida, M., Yamaguchi, K., Sugawara, K., Shiohara, Y., Tanaka, S.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 597 KB

english, 1990

23

Effect of spacer layer thickness on the static characteristics of resonant tunneling diodes

Mehdi, I., Mains, R. K., Haddad, G. I.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 463 KB

english, 1990

24

Behavior of high dose O+-implanted Si/Ge/Si structures

Zhang, J. P., Tang, Y. S., Robinson, A. K., Bussmann, U., Hemment, P. L. F., Sealy, B. J., Newstead, S. M., Powell, A. R., Whall, T. E., Parker, E. H. C.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 498 KB

english, 1990

25

Silicon implantation into GaAs: Observations of dose rate dependent electrical activation and damage

Moore, F. G., Dietrich, H. B., Dobisz, E. A., Holland, O. W.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 557 KB

english, 1990

26

Integrated-optic polarization controller with unlimited transformation range

Heismann, F., Divino, M. D., Buhl, L. L.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 554 KB

english, 1990

27

Hydrogenation of GaAs-on-InP

Chakrabarti, U. K., Pearton, S. J., Hobson, W. S., Lopata, J., Swaminathan, V.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 607 KB

english, 1990

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