Volume 58; Issue 13

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Applied Physics Letters
Volume 58; Issue 13

Applied Physics Letters

Volume 58; Issue 13

1

Optical scatter in epitaxial semiconductor multilayers

Gourley, P. L., Dawson, L. R., Brennan, T. M., Hammons, B. E., Stover, J. C., Schaus, C. F., Sun, S.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 689 KB

english, 1991

2

Crystal structure and superconductivity of (La,Sr)2CuO4/Sm2CuO4 superlattices prepared by excimer laser deposition

Tabata, Hitoshi, Kawai, Tomoji, Kawai, Shichio

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 674 KB

english, 1991

3

Electrically controlled frequency scanning by a photoconducting antenna array

Hu, B. B., Froberg, N., Mack, M., Zhang, X.-C., Auston, D. H.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 524 KB

english, 1991

4

Novel metal ion surface modification technique

Brown, I. G., Godechot, X., Yu, K. M.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 635 KB

english, 1991

5

Picosecond carrier dynamics and tunneling-assisted recombination in photorefractive δ-doped superlattices

Ralph, Stephen E., Lacaita, Andrea, Capasso, Federico, Malik, Roger J.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 642 KB

english, 1991

6

Use of ultraviolet/ozone cleaning to remove C and O from GaAs prior to metalorganic molecular beam epitaxy and metalorganic chemical vapor deposition

Pearton, S. J., Ren, F., Abernathy, C. R., Hobson, W. S., Luftman, H. S.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 627 KB

english, 1991

7

One monolayer of Sb or Bi used as a buffer layer preventing oxidation of InP

Yamada, Masao, Wahi, Anita K., Meissner, Paul L., Herrera, Alberto, Kendelewicz, Tom, Spicer, William E.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 626 KB

english, 1991

8

In situ stress measurement of chemical vapor deposited tungsten silicides

Washidzu, Gen, Hara, Tohru, Miyamoto, Takaaki, Inoue, Toshihiro

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 529 KB

english, 1991

9

Quantum Hall effect in InAs/AlSb quantum wells

Hopkins, P. F., Rimberg, A. J., Westervelt, R. M., Tuttle, G., Kroemer, H.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 681 KB

english, 1991

10

Gas source molecular beam epitaxy growth of short period GaP/AlP(001) superlattices

Asahi, Hajime, Asami, Kumiko, Watanabe, Tetsuya, Yu, Soon Jae, Kaneko, Tadaaki, Emura, Shuichi, Gonda, Shun-ichi

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 575 KB

english, 1991

11

Monolithic integration of an (Al)GaAs laser and an intracavity electroabsorption modulator using selective partial interdiffusion

O’Brien, S., Shealy, J. R., Wicks, G. W.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 653 KB

english, 1991

12

Thickness-dependent kinetics of laser-induced oxidation of thin copper films

Wautelet, M., Hanus, F.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 541 KB

english, 1991

13

Enhanced dark conductivity during the plastic deformation of red mercuric iodide

Marschall, Jochen, Milstein, Frederick

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 542 KB

english, 1991

14

Mechanistic investigations of nanometer-scale lithography at liquid-covered graphite surfaces

Penner, Reginald M., Heben, Michael J., Lewis, Nathan S., Quate, Calvin F.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 694 KB

english, 1991

15

Photoluminescence of deep levels in ion-implanted AlxGa1−xAs

Gillin, W. P., Homewood, K. P., Sealy, B. J., Roberts, J.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 538 KB

english, 1991

16

Properties of silicon surface cleaned by hydrogen plasma

Ishii, M., Nakashima, K., Tajima, I., Yamamoto, M.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 529 KB

english, 1991

17

Recrystallization of silicon amorphized by carbon implantation

Chevacharoenkul, Sopa, Ilzhoefer, John R., Feijóo, Diego, Gösele, Ulrich

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 610 KB

english, 1991

18

Refractive index changes in a GaAs multiple quantum well structure produced by impurity-induced disordering using boron and fluorine

Hansen, S. I., Marsh, J. H., Roberts, J. S., Gwilliam, R.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 519 KB

english, 1991

19

Ion-implanted extrinsic Ge photodetectors with extended cutoff wavelength

Wu, I. C., Beeman, J. W., Luke, P. N., Hansen, W. L., Haller, E. E.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 606 KB

english, 1991

20

Investigation of lateral straggling of Hg ions in Si3N4 by normal and glancing angle Rutherford backscattering

Wang, Ke-Ming, Zao, Qing-Tai, Shi, Bo-Rong, Wang, Zhong-Lie, Liu, Xiang-Dong, Liu, Ji-Tian

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 496 KB

english, 1991

21

High-temperature operation (to 180 °C) of 0.98 μm strained single quantum well In0.2Ga0.8As/GaAs lasers

van der Ziel, J. P., Chand, Naresh

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 524 KB

english, 1991

22

Sm2Fe17Nx: Site and valence of the interstitial nitrogen

Capehart, T. W., Mishra, R. K., Pinkerton, F. E.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 632 KB

english, 1991

23

Resonant tunneling of two-dimensional electrons into one-dimensional subbands of a quantum wire

Zaslavsky, A., Tsui, D. C., Santos, M., Shayegan, M.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 649 KB

english, 1991

24

Subpicosecond characterization of carrier transport in GaAs-metal-semiconductor-metal photodiodes

Lambsdorff, M., Klingenstein, M., Kuhl, J., Moglestue, C., Rosenzweig, J., Axmann, A., Schneider, Jo., Hülsmann, A., Leier, H., Forchel, A.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 551 KB

english, 1991

25

Study of crystallographic orientations in the diamond film on the (100) surface of cubic boron nitride using a Raman microprobe

Yoshikawa, M., Ishida, H., Ishitani, A., Koizumi, S., Inuzuka, T.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 448 KB

english, 1991

26

New nondestructive depth profile measurement by using a refracted x-ray fluorescence method

Sasaki, Yuji C., Hirokawa, Kichinosuke

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 524 KB

english, 1991

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