Volume 58; Issue 15

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Applied Physics Letters
Volume 58; Issue 15

Applied Physics Letters

Volume 58; Issue 15

1

Dynamics of excimer laser‐ablated aluminum neutral atom plume measured by dye laser resonance absorption photography

Gilgenbach, Ronald M., Ventzek, Peter L. G.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 655 KB

english, 1991

2

Oxidation property of silicon small particles

Okada, R., Iijima, S.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 448 KB

english, 1991

3

Noncritically phase-matched second-harmonic generation and optical parametric amplification in a lithium triborate crystal

Huang, J. Y., Shen, Y. R., Chen, Chuangtian, Wu, Bochang

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 516 KB

english, 1991

4

Competition between fundamental and second-harmonic operations in a submillimeter wave gyrotron

Idehara, T., Tatsukawa, T., Ogawa, I., Mori, T., Tanabe, H., Wada, S., Brand, G. F., Brennan, M. H.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 568 KB

english, 1991

5

Reversible Eu[sup 2+]↔Eu[sup 3+] transitions at Eu-Si interfaces

Henle, W. A., Ramsey, M. G., Netzer, F. P., Horn, K.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 611 KB

english, 1991

6

Effect of scattering by native defects on electron mobility in modulation-doped heterostructures

Walukiewicz, W., Haller, E. E.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 695 KB

english, 1991

7

Raman microprobe study of narrow InxGa1−xAs stripes on patterned GaAs(100) substrates

Tang, W. C., Rosen, H. J., Guha, S., Madhukar, A.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 698 KB

english, 1991

8

Effect of structural parameters on transport characteristics of GaInAs/AlInAs two-dimensional electron gases grown by molecular beam epitaxy

Tischler, M. A., Parker, B. D.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 627 KB

english, 1991

9

Crack formation in epitaxial [110] thin films of YBa2Cu3O7−δ and PrBa2Cu3O7−x on [110]SrTiO3 substrates

Olsson, E., Gupta, A., Thouless, M. D., Segmüller, A., Clarke, D. R.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 647 KB

english, 1991

10

Diffusion of vanadium in silicon

Sadoh, T., Nakashima, H.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 534 KB

english, 1991

11

Novel reflectance modulator employing an InGaAs/AlGaAs strained-layer superlattice Fabry–Perot cavity with unstrained InGaAs/InAlAs mirrors

Fritz, I. J., Myers, D. R., Vawter, G. A., Brennan, T. M., Hammons, B. E.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 682 KB

english, 1991

12

Selective excitation of single-mode acoustic waves by phase velocity scanning of a laser beam

Yamanaka, Kazushi, Nagata, Yoshihiko, Koda, Toshio

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 629 KB

english, 1991

13

Removal of the sulfur passivation overlayer on a (NH4)2Sx-treated GaAs surface by vacuum-ultraviolet irradiation

Takakuwa, Yuji, Niwano, Michio, Fujita, Shinya, Takeda, Yuki, Miyamoto, Nobuo

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 646 KB

english, 1991

14

Molecular beam epitaxy of ZnSe1−xTex ternary alloys

Turco-Sandroff, F. S., Nahory, R. E., Brazil, M. J. S. P., Martin, R. J., Gilchrist, H. L.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 666 KB

english, 1991

15

Fast recovery of excitonic absorption bleaching in tunneling biquantum well structures

Tackeuchi, Atsushi, Muto, Shunichi, Inata, Tsuguo, Fujii, Toshio

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 640 KB

english, 1991

16

Laser selective area epitaxy of GaAs metal-semiconductor-field-effect transistor

Liu, H., Roberts, J. C., Ramdani, J., Bedair, S. M.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 576 KB

english, 1991

17

1/ f noise reduction of metal-oxide-semiconductor transistors by cycling from inversion to accumulation

Bloom, I., Nemirovsky, Y.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 617 KB

english, 1991

18

Continuous drawing of Bi-Ca-Sr-Cu-O glass fibers from a preform

Zheng, Haixing, Hu, Yi, Mackenzie, J. D.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 542 KB

english, 1991

19

Excitons and light-induced degradation of amorphous hydrogenated silicon

Brandt, Martin S., Stutzmann, Martin

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 519 KB

english, 1991

20

Complementary optical tap fabricated in an electro-optic polymer waveguide

Van Eck, T. E., Ticknor, A. J., Lytel, R. S., Lipscomb, G. F.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 598 KB

english, 1991

21

Si ultrashallow p+n junctions using low-energy boron implantation

Bousetta, A., van den Berg, J. A., Armour, D. G., Zalm, P. C.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 552 KB

english, 1991

22

Comparison of bulk and quantum wire photodetectors

Crawford, D. L., Nagarajan, R. L., Bowers, J. E.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 603 KB

english, 1991

23

X-ray scattering study of lattice relaxation in ErAs epitaxial layers on GaAs

Miceli, P. F., Palmstro̸m, C. J., Moyers, K. W.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 645 KB

english, 1991

24

Bloch states of electrons in a corrugated quantum channel in a magnetic field

Lent, Craig S., Leng, Manhua

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 567 KB

english, 1991

25

Structure, properties, and thermal stability of in situ phosphorus-doped hydrogenated microcrystalline silicon prepared by plasma-enhanced chemical vapor deposition

Jeng, S. J., Kotecki, D. E., Kanicki, J., Parks, C. C., Tien, J.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 716 KB

english, 1991

26

Thermally stable and nonspiking Pd/Sb(Mn) ohmic contact to p-GaAs

Han, C. C., Wang, X. Z., Lau, S. S., Potemski, R. M., Tischler, M. A., Kuech, T. F.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 642 KB

english, 1991

27

Hybrid optical bistability based on voltage-controlled changes of persistent spectral holes

Hartmannsgruber, N., Maier, Max

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 559 KB

english, 1991

28

Optimal parameters for AlGaAs-InGaAs-AlGaAs p-channel field-effect transistors

Laikhtman, B., Kiehl, R. A., Frank, D. J.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 566 KB

english, 1991

29

Comparison of Si(111) surfaces prepared using aqueous solutions of NH4F versus HF

Higashi, G. S., Becker, R. S., Chabal, Y. J., Becker, A. J.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 646 KB

english, 1991

30

Experimental observation of large room-temperature current gains in a Stark effect transistor

Collins, D. A., Chow, D. H., McGill, T. C.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 603 KB

english, 1991

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