Volume 58; Issue 18

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Applied Physics Letters
Volume 58; Issue 18

Applied Physics Letters

Volume 58; Issue 18

1

Novel metalorganic chemical vapor deposition system for GaN growth

Nakamura, Shuji, Harada, Yasuhiro, Seno, Masayuki

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 491 KB

english, 1991

2

Visible light emission from semiconducting polymer diodes

Braun, D., Heeger, A. J.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 642 KB

english, 1991

3

Room-temperature enhancement of electro-optical modulation by resonance-induced exciton mixing in a GaAs/AlAs superlattice

Schneider, Harald, Ploog, Klaus

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 653 KB

english, 1991

4

Electro-optic characterization of ion beam sputter-deposited KNbO3 thin films

T. M. Graettinger, S. H. Rou, M. S. Ameen, O. Auciello, A. I. Kingon

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 670 KB

english, 1991

5

Use of high-temperature superconductors for resonators of far-infrared p-germanium lasers

Bespalov, A. V., Lang, P. T., Betz, J., Renk, K. F.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 615 KB

english, 1991

6

Mixed-state behavior in large magnetic fields of high-temperature superconducting films prepared by metalorganic deposition

McIntyre, Paul C., Cima, Michael J., Liebenberg, Donald H., Francavilla, Thomas L.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 598 KB

english, 1991

7

Photochemical laser writing of polymeric optical waveguides

Beeson, K. W., Horn, K. A., McFarland, M., Yardley, J. T.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 623 KB

english, 1991

8

Second-harmonic generation device with integrated periodically domain-inverted regions and distributed Bragg reflector in a LiNbO3 channel waveguide

Shinozaki, K., Miyamoto, Y., Okayama, H., Kamijoh, T., Nonaka, T.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 671 KB

english, 1991

9

Improved performance of strained InGaAs/GaAs photodiodes grown on patterned GaAs substrates by molecular beam epitaxy

Li, W. Q., Bhattacharya, P. K., Tober, R. L.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 599 KB

english, 1991

10

High-efficiency InGaP light-emitting diodes on GaP substrates

Stinson, L. J., Yu, J. G., Lester, S. D., Peanasky, M. J., Park, Kwang

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 552 KB

english, 1991

11

Magnetocrystalline anisotropies of RTiFe11Nx compounds

Yang, Ying-chang, Zhang, Xiao-dong, Kong, Lin-shu, Pan, Qi, Ge, Sen-lin

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 601 KB

english, 1991

12

Growth of GaInAsP using ethyldimethylindium and tertiarybutylphosphine

Sharps, P. R., Timmons, M. L., Colpitts, T. S.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 687 KB

english, 1991

13

Characterization of epitaxial GaAs and AlxGa1−xAs layers doped with oxygen

Goorsky, M. S., Kuech, T. F., Cardone, F., Mooney, P. M., Scilla, G. J., Potemski, R. M.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 703 KB

english, 1991

14

KTiOPxAs1−xO4 optical waveguides grown by liquid phase epitaxy

Cheng, L. K., Bierlein, J. D., Ballman, A. A.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 697 KB

english, 1991

15

Strain relief study concerning the InxGa1−xAs/GaAs (0.07

Krishnamoorthy, V., Ribas, P., Park, R. M.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 656 KB

english, 1991

16

Layer-by-layer epitaxial growth of a Bi2Sr2CuO6 thin film on a Bi2Sr2CaCu2O8 single crystal

Matsumoto, Takuya, Kawai, Tomoji, Kitahama, Katsuki, Kawai, Shichio, Shigaki, Ichiro, Kawate, Yoshio

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 666 KB

english, 1991

17

Conductivity-type inversion following low-energy hydrogen implantation

Zhou, Tian-Qun, Radzimski, Zbigniew, Patnaik, Bijoy, Rozgonyi, George A., Sopori, Bhushan

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 658 KB

english, 1991

18

Tandem active layer superluminescent diode with a very wide spectrum

Noguchi, Yoshio, Yasaka, Hiroshi, Mikami, Osamu

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 573 KB

english, 1991

19

Current gain enhancement in bipolar transistors by low-energy ion beam modification of the polycrystalline silicon emitter

Jalali, B., King, C. A., Higashi, G. S., Bean, J. C., Hull, R., Hsieh, Y.-F., Macaulay, J., Poate, J. M.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 627 KB

english, 1991

20

Molecular beam epitaxy and characterization of CdTe(211) and CdTe(133) films on GaAs(211)B substrates

Lange, M. D., Sporken, R., Mahavadi, K. K., Faurie, J. P., Nakamura, Y., Otsuka, N.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 731 KB

english, 1991

21

Organometallic vapor phase epitaxy of AlGaAs/GaAs heterojunction bipolar transistors using tertiarybutylarsine

Kim, T. S., Bayraktaroglu, B., Henderson, T. S., Plumton, D. L.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 580 KB

english, 1991

22

GaAs tetrahedral quantum dot structures fabricated using selective area metalorganic chemical vapor deposition

Fukui, T., Ando, S., Tokura, Y., Toriyama, T.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 556 KB

english, 1991

23

Bonding by atomic rearrangement of InP/InGaAsP 1.5 μm wavelength lasers on GaAs substrates

Lo, Y. H., Bhat, R., Hwang, D. M., Koza, M. A., Lee, T. P.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 496 KB

english, 1991

24

Polarization bistability in semiconductor lasers with intracavity multiple quantum well saturable absorbers

Ozeki, Y., Johnson, John E., Tang, C. L.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 624 KB

english, 1991

25

B doping using B2H6 in gas source Si molecular beam epitaxy

Hirayama, Hiroyuki, Hiroi, Masayuki, Koyama, Kazuhisa

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 515 KB

english, 1991

26

Parametric superfluorescence in KTiOPO4 crystals pumped by 1 ps pulses

Nishikawa, Tadashi, Uesugi, Naoshi, Yumoto, Junji

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 564 KB

english, 1991

27

Growth processes in molecular beam expitaxy of single-crystal Al layers on AlAs

Nakahara, Hiroaki, Matuhata, Hirofumi, Okada, Yasumasa, Kurosu, Tateki, Iida, Masamori, Yao, Takafumi

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 618 KB

english, 1991

28

Monolithic InP/InGaAsP/InP grating spectrometer for the 1.48–1.56 μm wavelength range

Soole, J. B. D., Scherer, A., LeBlanc, H. P., Andreadakis, N. C., Bhat, R., Koza, M. A.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 618 KB

english, 1991

29

Sulfur doping of GaAs and GaInP grown by metalorganic molecular beam epitaxy using a hydrogen sulfide gaseous source

Bove, Ph., Garcia, J. Ch., Maurel, Ph., Hirtz, J. P.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 539 KB

english, 1991

30

InGaAs/InP long wavelength quantum well infrared photodetectors

Gunapala, S. D., Levine, B. F., Ritter, D., Hamm, R., Panish, M. B.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 539 KB

english, 1991

31

Methane/hydrogen-based reactive ion etching of InAs, InP, GaAs, and GaSb

Werking, James, Schramm, Jeff, Nguyen, Chanh, Hu, Evelyn L., Kroemer, Herbert

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 570 KB

english, 1991

32

Optically induced absorption modulation in a periodically δ-doped InGaAs/GaAs multiple quantum well structure

Larsson, A., Maserjian, J.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 665 KB

english, 1991

33

Scalable high-power optically pumped GaAs laser

Le, H. Q., Di Cecca, S., Mooradian, A.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 592 KB

english, 1991

34

In situ preparation of superconducting Y1Ba2Cu3O7−δ thin films by on-axis rf magnetron sputtering from a stoichiometric target

Blue, C., Boolchand, P.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 719 KB

english, 1991

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