Volume 58; Issue 19

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Applied Physics Letters
Volume 58; Issue 19

Applied Physics Letters

Volume 58; Issue 19

1

Breakdown of crystallinity in low‐temperature‐grown GaAs layers

Liliental‐Weber, Zuzanna, Swider, W., Yu, K. M., Kortright, J., Smith, F. W., Calawa, A. R.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 759 KB

english, 1991

2

Correlation between the O+2 induced electron emission coefficient and the removal rate of Cu impurities segregated at the SiO2/Si interface

Wittmaack, K., Homma, Y.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 690 KB

english, 1991

3

Ultrafast graded double‐heterostructure GaInAs/InP photodiode

Wey, Y. G., Crawford, D. L., Giboney, K., Bowers, J. E., Rodwell, M. J., Silvestre, P., Hafich, M. J., Robinson, G. Y.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 538 KB

english, 1991

4

Quantitative determination of high‐temperature oxygen microprecipitates in Czochralski silicon by micro‐Fourier transform infrared spectroscopy

Borghesi, A., Geddo, M., Pivac, B., Sassella, A., Stella, A.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 686 KB

english, 1991

5

Watt-range, coherent, uniphase powers from phase-locked arrays of antiguided diode lasers

Botez, D., Jansen, M., Mawst, L. J., Peterson, G., Roth, T. J.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 606 KB

english, 1991

6

Coherent emission from two-dimensional Josephson junction arrays

Benz, S. P., Burroughs, C. J.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 706 KB

english, 1991

7

Epitaxial CeO2 films as buffer layers for high-temperature superconducting thin films

Wu, X. D., Dye, R. C., Muenchausen, R. E., Foltyn, S. R., Maley, M., Rollett, A. D., Garcia, A. R., Nogar, N. S.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 617 KB

english, 1991

8

Valence-band-edge shift due to doping in p+ GaAs

Silberman, J. A., de Lyon, T. J., Woodall, J. M.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 629 KB

english, 1991

9

Generation of 27 fs pulses of 70 kW peak power at 80 MHz repetition rate using a cw self-pulsing Ti:sapphire laser

Likforman, J. P., Grillon, G., Joffre, M., Le Blanc, C., Migus, A., Antonetti, A.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 568 KB

english, 1991

10

High electron mobility in modulation-doped Si/SiGe

Ismail, K., Meyerson, B. S., Wang, P. J.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 566 KB

english, 1991

11

Enhancement of boron diffusion through gate oxides in metal-oxide-semiconductor devices under rapid thermal silicidation

Lin, J., Park, K., Batra, S., Banerjee, S., Lee, J., Lux, G.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 575 KB

english, 1991

12

Atom probe analysis of Fe73.5Si13.5B9Nb3Cu1 nanocrystalline soft magnetic material

Hono, K., Inoue, A., Sakurai, T.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 666 KB

english, 1991

13

Surface-stress-induced structure and elastic behavior of thin films

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 617 KB

english, 1991

14

Identification of a paramagnetic nitrogen dangling bond defect in nitrided silicon dioxide films on silicon

Chaiyasena, I. A., Lenahan, P. M., Dunn, G. J.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 646 KB

english, 1991

15

Wavelength switching in narrow oxide stripe InGaAs-GaAs-AlGaAs strained-layer quantum well heterostructure lasers

Beernink, K. J., Alwan, J. J., Coleman, J. J.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 706 KB

english, 1991

16

Low-temperature selective epitaxy by ultrahigh-vacuum chemical vapor deposition from SiH4 and GeH4/H2

Racanelli, M., Greve, D. W.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 661 KB

english, 1991

17

Thickness dependence of the twin density in YBa2Cu3O7−δ thin films sputtered onto MgO substrates

Streiffer, S. K., Zielinski, E. M., Lairson, B. M., Bravman, J. C.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 582 KB

english, 1991

18

Strain tolerant microfilamentary conductors of Bi2Sr2Ca1Cu2O8−δ

Miller, T. A., Ostenson, J. E., Li, Q., Schwartzkopf, L. A., Finnemore, D. K., Righi, J., Gleixner, R. A., Zeigler, D.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 584 KB

english, 1991

19

Optical switching and optical logic in a thermally expanding Si étalon

Feng, S. T., Irene, E. A.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 592 KB

english, 1991

20

Biaxial splitting of optical phonon modes in ZnSe-ZnS strained-layer superlattices

Yamamoto, Aishi, Yamada, Yoichi, Masumoto, Yasuaki

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 653 KB

english, 1991

21

Magneto-optical properties of Pd-Ni multilayers

Flevaris, N. K.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 636 KB

english, 1991

22

Improvement of the carrier confinement by double-barrier GaAs/AlAs/(Al,Ga)As quantum well structures

Neu, G., Chen, Y., Deparis, C., Massies, J.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 643 KB

english, 1991

23

Electron paramagnetic resonance of a multistable interstitial-carbon-substitutional-phosphorus pair in silicon

Zhan, X. D., Watkins, G. D.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 680 KB

english, 1991

24

Changes in the silicon thermal donor energy level as a function of anneal time

Lamp, C. D., Jones, B. D.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 624 KB

english, 1991

25

Characterization of boron-doped silicon epitaxial layers by x-ray diffraction

Baribeau, J.-M., Rolfe, S. J.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 575 KB

english, 1991

26

Tunneling spectroscopy of ultrathin oxide on Si structure and H-terminated Si surfaces

Tabe, Michiharu, Tanimoto, Masafumi

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 537 KB

english, 1991

27

Robust infrared gratings in photorefractive quantum wells generated by an above-band-gap laser

Nolte, D. D., Wang, Q., Melloch, M. R.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 592 KB

english, 1991

28

Picosecond dynamics in gain-switched uncoupled and coupled quantum well lasers

Sogawa, T., Arakawa, Y.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 605 KB

english, 1991

29

130 ps recovery of all-optical switching in a GaAs multiquantum well directional coupler

LiKamWa, P., Miller, A., Roberts, J. S., Robson, P. N.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 519 KB

english, 1991

30

Direct imaging of Si incorporation in GaAs masklessly grown on patterned Si substrates

Grundmann, M., Christen, J., Bimberg, D., Hashimoto, A., Fukunaga, T., Watanabe, N.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 612 KB

english, 1991

31

Preferred alignment of twin boundaries in YBa2Cu3Ox thin films and YBa2Cu3Ox/PrBa2Cu3Ox superlattices on SrTiO3

Budai, J. D., Chisholm, M. F., Feenstra, R., Lowndes, D. H., Norton, D. P., Boatner, L. A., Christen, D. K.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 657 KB

english, 1991

32

Time-resolved photoluminescence spectroscopy from erbium-doped Ga0.55Al0.45As

Benyattou, T., Seghier, D., Guillot, G., Moncorge, R., Galtier, P., Charasse, M. N.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 513 KB

english, 1991

33

Heteroepitaxy of I-VII materials on III-V substrates

Tarnow, Eugen, Zhang, S. B.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 622 KB

english, 1991

34

Thin buried cobalt silicide layers in Si(100) by channeled implantations

Dekempeneer, E. H. A., Ottenheim, J. J. M., Zalm, P. C., Bulle-Lieuwma, C. W. T., Vandenhoudt, D. E. W., Naburgh, E. P.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 610 KB

english, 1991

35

New test structure to identify step coverage mechanisms in chemical vapor deposition of silicon dioxide

Cheng, Lie-Yea, McVittie, James P., Saraswat, Krishna C.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 606 KB

english, 1991

36

Observation of two in-plane epitaxial states in YBa2Cu3O7−δ films on yttria-stabilized ZrO2

Garrison, S. M., Newman, N., Cole, B. F., Char, K., Barton, R. W.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 585 KB

english, 1991

37

Aluminum oxide thin films prepared by chemical vapor deposition from aluminum 2-ethylhexanoate

Maruyama, Toshiro, Nakai, Tsuyoshi

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 466 KB

english, 1991

38

Transmission electron microscopy characterization of the initial stage of epitaxial growth of GaP on Si by low-pressure metalorganic chemical vapor deposition

Soga, T., George, T., Suzuki, T., Jimbo, T., Umeno, M., Weber, E. R.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 599 KB

english, 1991

39

High deposition rate laser direct writing of Al on Si

Lee, H. W., Allen, S. D.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 633 KB

english, 1991

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