Volume 58; Issue 20

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Applied Physics Letters
Volume 58; Issue 20

Applied Physics Letters

Volume 58; Issue 20

1

Epitaxial MgO on Si(001) for Y‐Ba‐Cu‐O thin‐film growth by pulsed laser deposition

Fork, D. K., Ponce, F. A., Tramontana, J. C., Geballe, T. H.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 737 KB

english, 1991

2

Low‐temperature growth of Ge on Si(100)

Eaglesham, D. J., Cerullo, M.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 826 KB

english, 1991

3

Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes

Brown, E. R., Soderstrom, J. R., Parker, C. D., Mahoney, L. J., Molvar, K. M., McGill, T. C.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 757 KB

english, 1991

4

Preparation and characterization of nanocrystalline cubic boron nitride by microwave plasma-enhanced chemical vapor deposition

Saitoh, Hidetoshi, Yarbrough, Walter A.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 722 KB

english, 1991

5

Nanosecond laser-induced cavitation in carbon microparticle suspensions: Applications in nonlinear interface switching

Lawson, C. M., Euliss, G. W., Michael, R. R.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 602 KB

english, 1991

6

Intersubband absorption and infrared photodetection at 3.5 and 4.2 Î¼m in GaAs quantum wells

Schneider, Harald, Fuchs, Frank, Dischler, Bernhard, Ralston, John D., Koidl, Peter

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 671 KB

english, 1991

7

Anomalous change of extinction spectra of CuCl microcrystals

Masumoto, Yasuaki, Wamura, Tetsuro, Kawamura, Tomohiro

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 624 KB

english, 1991

8

Effect of rapid thermal annealing on planar-doped pseudomorphic InGaAs high electron mobility transistor structures

Streit, D. C., Jones, W. L., Sadwick, L. P., Kim, C. W., Hwu, R. J.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 617 KB

english, 1991

9

High-power 1.48 μm multiple quantum well lasers with strained quaternary wells entirely grown by metalorganic vapor phase epitaxy

Joma, M., Horikawa, H., Matsui, Y., Kamijoh, T.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 583 KB

english, 1991

10

Reduction in linewidth enhancement factor for In0.2Ga0.8As/ GaAs/Al0.5Ga0.5As strained quantum well lasers

Banerjee, S., Srivastava, A. K., Chand, Naresh

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 473 KB

english, 1991

11

Threshold shifting in pseudomorphic semiconductor-insulator-semiconductor heterostructure field-effect transistors

Wright, S. L., Solomon, P. M., Baratte, H., LaTulipe, D. C., Jackson, T. N.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 658 KB

english, 1991

12

Oxygen incorporation in highly c-axis oriented YBa2Cu3O7−x thin films deposited by plasma-enhanced metalorganic chemical vapor deposition

Li, Y. Q., Zhao, J., Chern, C. S., Lemoine, E. E., Gallois, B., Norris, P., Kear, B.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 687 KB

english, 1991

13

Effects of metalorganic chemical vapor deposition growth conditions on the GaAs/Ge solar cell properties

Chen, J. C., Ristow, M. Ladle, Cubbage, J. I., Werthen, J. G.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 647 KB

english, 1991

14

Pulse buildup of the germanium far-infrared laser

Keilmann, F., Shastin, V. N., Till, R.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 655 KB

english, 1991

15

Interactive effects in the reactive ion etching of SiGe alloys

Oehrlein, G. S., Zhang, Y., Kroesen, G. M. W., de Frésart, E., Bestwick, T. D.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 756 KB

english, 1991

16

In situ synchrotron studies of the structural properties of Y-Ba-Cu-O thin films during growth

Zheng, J. Q., Wang, X. K., Shih, M. C., Williams, S., So, J., Lee, S. J., Dutta, P., Chang, R. P. H., Ketterson, J. B.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 693 KB

english, 1991

17

Controlling H atom production in the 193 nm laser photolysis of triethylarsenic

Xu, Xiaodong, Deshmukh, Subhash, Brum, Jeffrey L., Koplitz, Brent

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 684 KB

english, 1991

18

Noise suppression by a novel probe beam polarization modulation in electro-optic sampling

Takahashi, Ryo, Kamiya, Takeshi

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 657 KB

english, 1991

19

Preparation of superconducting thin films of Bi(Pb)-Sr-Ca-Cu-O by the thermal decomposition method

Sumiyoshi, F., Uehigashi, K., Yamaguchi, H., Hakuraku, Y., Shimura, H., Miyahara, S.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 610 KB

english, 1991

20

Novel far-infrared-photoconductor based on photon-induced interedge channel scattering

Dießel, E., Müller, G., Weiss, D., von Klitzing, K., Ploog, K., Nickel, H., Schlapp, W., Lösch, R.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 640 KB

english, 1991

21

How far does the charge state affect the iron behavior in silicon?

Heiser, T., Mesli, A.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 634 KB

english, 1991

22

25 ps pulses from a Nd:YAG laser mode locked by a frequency doubling β-BaB2O4 crystal

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 530 KB

english, 1991

23

Efficient pulsed laser removal of 0.2 μm sized particles from a solid surface

Zapka, W., Ziemlich, W., Tam, A. C.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 764 KB

english, 1991

24

Wave packets in a semiconductor superlattice

Biermann, Mark L., Stroud, C. R.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 609 KB

english, 1991

25

AlInGaAs/AlGaAs separate-confinement heterostructure strained single quantum well diode lasers grown by organometallic vapor phase epitaxy

Wang, C. A., Walpole, J. N., Missaggia, L. J., Donnelly, J. P., Choi, H. K.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 601 KB

english, 1991

26

Highly strained GaAs/InGaAs/AlAs resonant tunneling diodes with simultaneously high peak current densities and peak-to-valley ratios at room temperature

Kapre, R. M., Madhukar, A., Guha, S.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 580 KB

english, 1991

27

Nondisruptive oxide overlayer growth on GaAs(110)

Kroll, G. H., Ohno, T. R., Weaver, J. H.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 669 KB

english, 1991

28

Optically detected microwave-induced impact ionization of ytterbium bound excitons in InP

Heijmink Liesert, B. J., Godlewski, M., Stapor, A., Gregorkiewicz, T., Ammerlaan, C. A. J., Weber, J., Moser, M., Scholz, F.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 538 KB

english, 1991

29

Monoatomic step observation on Si(111) surfaces by force microscopy in air

Suzuki, M., Kudoh, Y., Homma, Y., Kaneko, R.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 634 KB

english, 1991

30

Influence of crystal imperfection on high-resolution diffraction profiles of silicon single crystals measured by highly collimated x-ray beams

Kawado, S., Kojima, S., Maekawa, I., Ishikawa, T.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 687 KB

english, 1991

31

Resonant self-pumped phase conjugation in cesium vapor at 0.85 μm

Gaeta, Celestino J., Lam, Juan F.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 444 KB

english, 1991

32

Reflectance-difference spectroscopy study of surface reactions in atomic layer epitaxy of GaAs using trimethylgallium and tertiarybutylarsine

Maa, B. Y., Dapkus, P. D.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 627 KB

english, 1991

33

High-contrast, large optical bandwidth field-induced guide/antiguide modulator

Huang, T. C., Chung, Y., Dagli, N., Coldren, L. A.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 596 KB

english, 1991

34

Quantum efficiency enhancement of AlGaAs/GaAs quantum well infrared detectors using a waveguide with a grating coupler

Andersson, J. Y., Lundqvist, L., Paska, Z. F.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 565 KB

english, 1991

35

Enhanced annealing kinetics in ion-implanted InxAl1−xAs studied by x-ray diffractometry

Clarke, Roy, Dos Passos, Waldemar, Chan, Yi-Jen, Pavlidis, Dimitris

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 525 KB

english, 1991

36

Effect of annealing Sb/InP(110) interfaces and Schottky barrier formation of Ag on annealed Sb/InP(110) surfaces

Yamada, Masao, Wahi, Anita K., Meissner, Paul L., Herrera-Gomez, Alberto, Kendelewicz, Tom, Spicer, William E.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 706 KB

english, 1991

37

Polarization switching and bistability in an external cavity laser with a polarization-sensitive saturable absorber

Ozeki, Y., Tang, C. L.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 708 KB

english, 1991

38

Measurements of the three-dimensional impurity profile in Si using chemical etching and scanning tunneling microscopy

Takigami, Takako, Tanimoto, Masafumi

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 659 KB

english, 1991

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