Volume 58; Issue 25

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Applied Physics Letters
Volume 58; Issue 25

Applied Physics Letters

Volume 58; Issue 25

1

Kelvin probe force microscopy

Nonnenmacher, M., OBoyle, M. P., Wickramasinghe, H. K.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 846 KB

english, 1991

2

Temperature dependence of semiconductor band gaps

OâDonnell, K. P., Chen, X.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 543 KB

english, 1991

3

Electrochirally controlled bistable surface switching in nematic liquid crystals

Barberi, R., Durand, G.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 668 KB

english, 1991

4

Wavelength-dependent amplification characteristics of femtosecond erbium-doped optical fiber amplifiers

Kurokawa, Kenji, Nakazawa, Masataka

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 689 KB

english, 1991

5

Bistable behavior of a vibrating tip near a solid surface

Gleyzes, P., Kuo, P. K., Boccara, A. C.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 567 KB

english, 1991

6

All optical, high contrast absorptive modulation in an asymmetric FabryâPerot eÌtalon

Heffernan, J. F., Moloney, M. H., Hegarty, J., Roberts, J. S., Whitehead, M.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 557 KB

english, 1991

7

Sidewall damage in a silicon substrate caused by trench etching

Hamamoto, Takeshi

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 557 KB

english, 1991

8

Direct observation of optical anisotropy in a GaAs/AlAs quantum well wire array

Kanbe, H., Chavez-Pirson, A., Ando, H., Saito, H., Fukui, T.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 579 KB

english, 1991

9

Reactive ion etching of polycrystalline silicon using SiCl4

Tang, Y. S., Wilkinson, C. D. W.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 563 KB

english, 1991

10

Metallizations of AuGeNi/GaAs(001) and Au/GaAs(001) contacts at 4×10−3 Pa and 7×108 Pa pressure

Zhao, Y. C., Wu, Z. Q.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 564 KB

english, 1991

11

Minority electron lifetimes in heavily doped p-type GaAs grown by molecular beam epitaxy

Ito, Hiroshi, Furuta, Tomofumi, Ishibashi, Tadao

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 568 KB

english, 1991

12

Strongly enhanced critical current density in Nb 47 wt. % Ti having a highly aligned microstructure

Cooley, L. D., Jablonski, P. D., Lee, P. J., Larbalestier, D. C.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 697 KB

english, 1991

13

Microwave properties of EuBa2Cu3O7−x thin films on MgO

Asano, Hidefumi, Satoh, Makoto, Konaka, Tsuneo

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 686 KB

english, 1991

14

Nanosecond scale optical pulse separations in double-exposure holographic interferometry for investigation of transient events

Ehrlich, Michael J., Wagner, James W.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 614 KB

english, 1991

15

Low-power, all-optical nonlinear absorption in asymmetric double quantum wells

Dawson, P., Galbraith, I., Kucharska, A. I., Foxon, C. T.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 629 KB

english, 1991

16

Enhancement of field-induced optical absorption by potential modification of coupled quantum well structures

Chan, Y. C., Tada, K.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 531 KB

english, 1991

17

Gas-source molecular beam epitaxy growth of highly strained device quality InAsP/InP multiple quantum well structures

Hou, H. Q., Tu, C. W., Chu, S. N. G.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 714 KB

english, 1991

18

Criteria for the observation of one-dimensional transport in split-gate field-effect quantum wires

Eugster, Cristopher C., del Alamo, Jesús A., Belk, Paul A., Rooks, Michael J.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 622 KB

english, 1991

19

Interface compound formation and dependence on In-layer thickness in Ni/In thin-film systems

Platzer, R., Wöhrmann, U., Ding, X. L., Fink, R., Krausch, G., Luckscheiter, B., Voigt, J., Schatz, G.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 553 KB

english, 1991

20

Near-diffraction-limited angle-switchable output beam from a broad-area diode laser with an intracavity spatial phase controller

Hohimer, J. P., Craft, D. C., Vawter, G. A., Myers, D. R.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 572 KB

english, 1991

21

High-temperature neutron diffraction study of the melting behavior of Bi2CaSr2Cu2Ox

Garbauskas, Mary F., Arendt, Ronald H., Jorgensen, James D., Hitterman, Richard L.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 411 KB

english, 1991

22

Impurity trapping and gettering in amorphous silicon

Coffa, S., Poate, J. M., Jacobson, D. C., Polman, A.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 565 KB

english, 1991

23

Etching polyimide films with continuous-wave ultraviolet lasers

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 617 KB

english, 1991

24

Evolution of spectrally discriminated spatial uniformity of line-shaped plasmas

Wang, Xiao-fang, Xu, Zhi-zhan, Chen, Shi-sheng, Qian, Ai-di, Fan, Pin-zhong, Zhang, Zheng-quan, Lin, Li-huang, Feng, Xian-ping, Gong, Mei-xia, Shan, Bing, Gao, Sheng-chen

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 552 KB

english, 1991

25

Three-terminal operation of the double-heterostructure optoelectronic switching laser

Taylor, G. W., Claisse, P. R., Cooke, P.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 560 KB

english, 1991

26

Analysis of cut-off frequency roll-off at high currents in SiGe double-heterojunction bipolar transistors

Gao, Guang-bo, Fan, Zhi-fang, Morkoç, H.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 519 KB

english, 1991

27

Electro-optic AlGaAs spatial light deflector/modulator based on a grating phased array

Vasey, F., Reinhart, F. K., Houdré, R., Stauffer, J. M.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 542 KB

english, 1991

28

(311)A substrates suppression of Be transport during GaAs molecular beam epitaxy

Mochizuki, Kazuhiro, Goto, Shigeo, Kusano, Chuushiro

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 460 KB

english, 1991

29

Luminescence intensity and lifetime dependences on temperature for Nd-doped GaP and GaAs

Taniguchi, Moriyuki, Nakagome, Hiroshi, Takahei, Kenichiro

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 575 KB

english, 1991

30

Guiding-center-drift resonance of two-dimensional electrons in a grid-gate superlattice potential

Liu, C. T., Tsui, D. C., Shayegan, M., Ismail, K., Antoniadis, D. A., Smith, Henry I.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 622 KB

english, 1991

31

Double solid phase epitaxy of germanium-implanted silicon on sapphire

Peterström, S.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 648 KB

english, 1991

32

Optical anisotropy in mismatched InGaAs/InP heterostructures

Bennett, Brian R., del Alamo, Jesús A.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 664 KB

english, 1991

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