Volume 58; Issue 4

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Applied Physics Letters
Volume 58; Issue 4

Applied Physics Letters

Volume 58; Issue 4

1

Many-body effects on the linewidth enhancement factor in quantum well lasers

Chow, Weng W., Koch, Stephan W., Sargent, Murray, Ell, Claudia

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 557 KB

english, 1991

2

Growth of YBa2Cu3O7−x thin films on Si with a CoSi2 buffer layer

Luo, Li, Muenchausen, R. E., Maggiore, C. J., Jimenez, J. R., Schowalter, L. J.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 675 KB

english, 1991

3

Effect of arsenic dimer species to silicon doping of GaAs layers prepared by molecular beam epitaxy

Wu, B. J., Mii, Y. J., Chen, M., Wang, K. L.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 655 KB

english, 1991

4

Photoconducting electro-optic polymer films

Schildkraut, Jay S.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 628 KB

english, 1991

5

Action of copper indium diselenide photoelectrochemical cells

Chu, J. W., Haneman, D.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 575 KB

english, 1991

6

Thermal annealing of modulation-doped Si/SiGe heterostructures with high electron mobilities

Schäffler, F., Jorke, H.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 678 KB

english, 1991

7

Permanent increase of the electrical conductivity of polymers induced by ultraviolet laser radiation

Schumann, M., Sauerbrey, R., Smayling, M. C.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 660 KB

english, 1991

8

Native-oxide stripe-geometry AlxGa1−xAs-GaAs quantum well heterostructure lasers

Dallesasse, J. M., Holonyak, N.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 583 KB

english, 1991

9

Radiation hardened metal-oxide-semiconductor devices with gate dielectrics grown by rapid thermal processing in O2 with diluted NF3

Ahn, J., Lo, G. Q., Ting, W., Kwong, D. L., Kuehne, John, Magee, Charles W.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 592 KB

english, 1991

10

Enhanced flux creep in Nb-Ti superconductors after an increase in temperature

Cross, R. W., Goldfarb, R. B.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 503 KB

english, 1991

11

Interstitial oxygen determination near epitaxial silicon and Czochralski silicon interface

Geddo, M., Pivac, B., Borghesi, A., Stella, A., Pedrotti, M.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 713 KB

english, 1991

12

Single-mode molecular beam epitaxy grown PbEuSeTe/PbTe buried-heterostructure diode lasers for CO2 high-resolution spectroscopy

Feit, Z., Kostyk, D., Woods, R. J., Mak, P.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 641 KB

english, 1991

13

Electron wave interference device with fractional layer superlattices

Tsubaki, Kotaro, Honda, Takashi, Saito, Hisao, Fukui, Takashi

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 529 KB

english, 1991

14

Elimination of laser prepulse by relativistic guiding in a plasma

Sprangle, P., Zigler, A., Esarey, E.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 562 KB

english, 1991

15

Superconducting whiskers and crystals of the high Tc Bi2Sr2Ca2Cu3O10 phase

Matsubara, Ichiro, Tanigawa, Hideo, Ogura, Toru, Yamashita, Hiroshi, Kinoshita, Makoto, Kawai, Tomoji

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 516 KB

english, 1991

16

Optically pumped Hg1−xZnxTe lasers grown by liquid phase epitaxy

Ravid, A., Zussman, Z., Sher, A., Shapira, Yoram

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 435 KB

english, 1991

17

Reactions in Pd/GaAs(001) contacts at 7×108 Pa pressure

Zhao, Y. C., Wu, Z. Q.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 543 KB

english, 1991

18

Scanning tunneling microscopy comparison of GaAs(001) vicinal surfaces grown by molecular beam epitaxy

Pashley, M. D., Haberern, K. W., Gaines, J. M.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 616 KB

english, 1991

19

X-ray characterization of in-plane ordering in YBa2Cu3O7−x thin films using a standard Weissenberg camera

Perrin, A., Karkut, M. G., Guilloux-Viry, M., Sergent, M.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 586 KB

english, 1991

20

Deep level transient spectroscopy based on conductance transients

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 515 KB

english, 1991

21

Preferential excitation and enhanced emission of Pb atoms following detonation of lead azide

Bar, I., Cohen, A., Heflinger, D., Tzuk, Y., Rosenwaks, S.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 558 KB

english, 1991

22

Very dense 102-laser arrays with extremely low threshold current

Hirata, Shoji, Narui, Hironobu, Mori, Yoshifumi

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 477 KB

english, 1991

23

Electrical characterization of InxGa1−xAs/Al0.4Ga0.6As/GaAs pseudomorphic semiconductor/insulator/semiconductor heterostructures

Collot, P., Barbier, E., Schmidt, P. E., Arnodo, C., Gaonach, C., Favre, J.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 604 KB

english, 1991

24

Passivation of n and p dopants in ion-implanted GaAs by a 2D+ plasma

Sadana, D. K., de Souza, J. P., Marshall, E. D., Baratte, H., Cardone, F.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 596 KB

english, 1991

25

Secondary electron emission spectroscopy: A sensitive and novel method for the characterization of the near-surface region of diamond and diamond films

Hoffman, Alon, Prawer, Steven, Folman, Mordechai

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 592 KB

english, 1991

26

Optimal GaAs(100) substrate terminations for heteroepitaxy

Farrell, H. H., Tamargo, M. C., de Miguel, J. L.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 525 KB

english, 1991

27

Nanosecond time-resolved study of pulsed laser ablation in the monolayer regime

Herminghaus, S., Leiderer, P.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 575 KB

english, 1991

28

Phase-shifted distributed feedback laser with linearly chirped grating for narrow linewidth and high-power operation

Zhou, Ping, Lee, G. S.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 472 KB

english, 1991

29

Properties of diamond composite films grown on iron surfaces

Ong, T. P., Chang, R. P. H.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 704 KB

english, 1991

30

Water protective surface layer on fluorozirconate glass produced by low-energy oxygen ion implantation

Dai, Yisheng, Kawaguchi, Toshiyasu, Suzuki, Koichi, Suzuki, Susumu, Yamamoto, Kiyoshi, Masui, Akio

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 573 KB

english, 1991

31

Phonon study of strained InGaAs layers

Brafman, O., Fekete, D., Sarfaty, R.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 661 KB

english, 1991

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