Volume 58; Issue 8

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Applied Physics Letters
Volume 58; Issue 8

Applied Physics Letters

Volume 58; Issue 8

1

Porous silicon formation: A quantum wire effect

Lehmann, V., GoÌsele, U.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 705 KB

english, 1991

2

Signature of the gallium-oxygen-gallium defect in GaAs by deep level transient spectroscopy measurements

Neild, S. T., Skowronski, M., Lagowski, J.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 556 KB

english, 1991

3

Novel cavity design for high reflectivity changes in a normally off electroabsorption modulator

Pezeshki, B., Thomas, D., Harris, J. S.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 539 KB

english, 1991

4

Effective barrier height, conduction-band offset, and the influence of p-type Î´ doping at heterojunction interfaces: The case of the InAs/GaAs interface

T. Shen, M. Elliott, R. H. Williams, D. Westwood

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 663 KB

english, 1991

5

Fluence-dependent transmission of polyimide at 248 nm under laser ablation conditions

Pettit, G. H., Sauerbrey, R.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 615 KB

english, 1991

6

p-n junction diode made of semiconducting diamond films

Okano, Ken, Kiyota, Hideo, Iwasaki, Tatsuya, Kurosu, Tateki, Iida, Masamori, Nakamura, Terutaro

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 488 KB

english, 1991

7

Real-time hologram construction and reconstruction using a high-resolution spatial light modulator

Fukushima, Seiji, Kurokawa, Takashi, Ohno, Masayoshi

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 589 KB

english, 1991

8

Native-oxide-defined coupled-stripe AlxGa1−xAs-GaAs quantum well heterostructure lasers

Dallesasse, J. M., Holonyak, N., Hall, D. C., El-Zein, N., Sugg, A. R., Smith, S. C., Burnham, R. D.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 610 KB

english, 1991

9

Amplitude modulation mode locking of lasers by regenerative feedback

Turi, L., Krausz, F.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 672 KB

english, 1991

10

Generation of blue-green 10 fs pulses using an excimer pumped dye amplifier

Schoenlein, R. W., Bigot, J.-Y., Portella, M. T., Shank, C. V.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 607 KB

english, 1991

11

Effect of substrate misorientation on surface morphology of homoepitaxial CdTe films grown by organometallic vapor phase epitaxy

Snyder, D. W., Mahajan, S., Ko, E. I., Sides, P. J.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 710 KB

english, 1991

12

Two-dimensional phase-locked arrays of vertical-cavity semiconductor lasers by mirror reflectivity modulation

Orenstein, M., Kapon, E., Stoffel, N. G., Harbison, J. P., Florez, L. T., Wullert, J.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 706 KB

english, 1991

13

Dependence of crystalline orientation on film thickness in laser-ablated YBa2Cu3O7−δ on LaAlO3

Carim, A. H., Basu, S. N., Muenchausen, R. E.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 769 KB

english, 1991

14

Application of photodeposited Cd to Schottky barrier diode and transistor fabrication on InP and In0.53Ga0.47As substrates

Licata, Thomas J., Schmidt, Michael T., Osgood, Richard M., Chan, Winston K., Bhat, Rajaram

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 595 KB

english, 1991

15

Domain boundary control of edge roughness in vicinal Si(001)

Swartzentruber, B. S., Mo, Y. W., Lagally, M. G.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 555 KB

english, 1991

16

Chemical beam epitaxial selective growth of InP for laser fabrication

Gailhanou, M., Labourie, C., Liévin, J. L., Perales, A., Lambert, M., Poingt, F., Sigogne, D.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 513 KB

english, 1991

17

Double-heterostructure Pb1−x−yCdxSryS/PbS/Pb1−x−yCdxSryS lasers grown by molecular beam epitaxy

Koguchi, N., Takahashi, S.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 437 KB

english, 1991

18

Interferometric determination of the linewidth enhancement factor of a 1.55 μm GaInAsP optical amplifier

Ehrhart, J. F., Villeneuve, A., Assanto, G., Stegeman, G. I., Mersali, B., Accard, A., Gelly, G., Fernier, B.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 559 KB

english, 1991

19

Improvement of GaAs crystal quality grown on Si by metalorganic chemical vapor deposition through two-dimensional-like nucleation with an in situ H2/AsH3 plasma cleaning at 450 °C

Yoon, Euijoon, Reif, Rafael

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 619 KB

english, 1991

20

X-ray rocking curve measurement of composition and strain in Si-Ge buffer layers grown on Si substrates

Fatemi, M., Stahlbush, R. E.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 590 KB

english, 1991

21

Contour photoetching of n-type semiconductors

van de Ven, J., Nabben, H. J. P.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 618 KB

english, 1991

22

Temperature-dependent critical layer thickness for In0.36Ga0.64As/GaAs single quantum wells

Ekenstedt, M. J., Wang, S. M., Andersson, T. G.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 485 KB

english, 1991

23

High powers and subpicosecond pulses from an external-cavity surface-emitting InGaAs/InP multiple quantum well laser

Jiang, W. B., Friberg, S. R., Iwamura, H., Yamamoto, Y.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 555 KB

english, 1991

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