Volume 59; Issue 17

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Applied Physics Letters
Volume 59; Issue 17

Applied Physics Letters

Volume 59; Issue 17

1

Optical investigation of interface roughness and defect incorporation in GaAs/AlGaAs quantum wells grown with and without growth interruption

Gurioli, M., Vinattieri, A., Colocci, M., Bosacchi, A., Franchi, S.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 641 KB

english, 1991

2

Self-limitation in the surface segregation of Ge atoms during Si molecular beam epitaxial growth

Fukatsu, S., Fujita, K., Yaguchi, H., Shiraki, Y., Ito, R.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 446 KB

english, 1991

3

Phonon-defect scattering in high thermal conductivity diamond films

Morelli, Donald T., Hartnett, Thomas M., Robinson, Clifford J.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 694 KB

english, 1991

4

Local electrical dissipation imaged by scanning force microscopy

Denk, Winfried, Pohl, Dieter W.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 715 KB

english, 1991

5

X-ray reflectivity measurements of the expansion of carbon films upon annealing

Lucas, C. A., Nguyen, T. D., Kortright, J. B.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 629 KB

english, 1991

6

Deposition and characterization of fullerene films

Hebard, A. F., Haddon, R. C., Fleming, R. M., Kortan, A. R.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 566 KB

english, 1991

7

Evidence for quantum confinement in the photoluminescence of porous Si and SiGe

Gardelis, S., Rimmer, J. S., Dawson, P., Hamilton, B., Kubiak, R. A., Whall, T. E., Parker, E. H. C.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 662 KB

english, 1991

8

Ion-irradiation control of photoluminescence from porous silicon

Barbour, J. C., Dimos, D., Guilinger, T. R., Kelly, M. J., Tsao, S. S.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 745 KB

english, 1991

9

Ion beam synthesis of buried α-FeSi2 and β-FeSi2 layers

Radermacher, K., Mantl, S., Dieker, Ch., Lüth, H.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 668 KB

english, 1991

10

Capacitively coupled glow discharges at frequencies above 13.56 MHz

M. Surendra, D. B. Graves

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 561 KB

english, 1991

11

Passivation of shallow impurities in Si by annealing in H2 at high temperature

Veloarisoa, I. A., Stavola, Michael, Kozuch, D. M., Peale, R. E., Watkins, G. D.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 635 KB

english, 1991

12

Vacuum field emission from a Si-TaSi2 semiconductor-metal eutectic composite

Kirkpatrick, D. A., Bergeron, G. L., Czarnaski, M. A., Hickman, J. J., Levinson, M., Nguyen, Q. V., Ditchek, B. M.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 787 KB

english, 1991

13

Effect of collector-base valence-band discontinuity on Kirk effect in double-heterojunction bipolar transistors

Mazhari, B., Morkoç, H.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 593 KB

english, 1991

14

Writing electronically active nanometer-scale structures with a scanning tunneling microscope

Hartmann, E., Behm, R. J., Krötz, G., Müller, G., Koch, F.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 716 KB

english, 1991

15

Vertical-cavity surface-emitting laser diodes fabricated by phase-locked epitaxy

Walker, J. D., Kuchta, D. M., Smith, J. S.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 672 KB

english, 1991

16

Annealing and profile of interstitial iron in boron-doped silicon

Gao, X., Mollenkopf, H., Yee, S.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 576 KB

english, 1991

17

High-speed magnetization reversal near the compensation temperature of amorphous GdTbFe

Aeschlimann, M., Vaterlaus, A., Lutz, M., Stampanoni, M., Meier, F., Siegmann, H. C., Klahn, S., Hansen, P.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 681 KB

english, 1991

18

Method for predicting microsegregation-free solidification with application to Ag-Cu alloys

Yankov, E. Y., Yankova, M. I., Copley, S. M., Todd, J. A.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 505 KB

english, 1991

19

Epitaxial growth of aluminum nitride on Si(111) by reactive sputtering

Meng, W. J., Heremans, J., Cheng, Y. T.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 733 KB

english, 1991

20

Theoretical studies of the applications of resonant tunneling diodes as intersubband laser and interband excitonic modulators

Loehr, J. P., Singh, J., Mains, R. K., Haddad, G. I.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 644 KB

english, 1991

21

Extension of the bi-epitaxial Josephson junction process to various substrates

Char, K., Colclough, M. S., Lee, L. P., Zaharchuk, G.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 628 KB

english, 1991

22

Interface morphology in molecular beam epitaxy grown In0.5Ga0.5As/GaAs strained heterostructures

Wang, S. M., Andersson, T. G., Ekenstedt, M. J.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 657 KB

english, 1991

23

3.06 μm InGaAsSb/InPSb diode lasers grown by organometallic vapor-phase epitaxy

Menna, R. J., Capewell, D. R., Martinelli, Ramon U., York, P. K., Enstrom, R. E.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 559 KB

english, 1991

24

50 nm linewidth platinum sidewall lithography by effusive-source metal precursor chemical deposition and ion-assisted etching

Hsu, David S. Y.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 544 KB

english, 1991

25

Exchange effect in coupled two-dimensional electron gas systems

Ruden, P. Paul, Wu, Zhiqiang

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 552 KB

english, 1991

26

Low threshold, 290 fs erbium-doped fiber laser with a nonlinear amplifying loop mirror pumped by InGaAsP laser diodes

Nakazawa, Masataka, Yoshida, Eiji, Kimura, Yasuo

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 576 KB

english, 1991

27

Epitaxy of LiF on Ge(100)

Lapiano-Smith, D. A., Eklund, E. A., Himpsel, F. J., Terminello, L. J.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 548 KB

english, 1991

28

Correlations between stress-induced positive charges and time-dependent dielectric breakdown in ultrathin silicon oxide films

Yamada, Hiroshi, Makino, Takahiro

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 506 KB

english, 1991

29

Direct probing of electron movement in superlattices by subpicosecond luminescence

Deveaud, B., Clérot, F., Chomette, A., Lambert, B., Auvray, P., Gauneau, M., Regreny, A.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 596 KB

english, 1991

30

Radical-assisted organometallic vapor-phase epitaxial growth of GaAs

Li, S. H., Chen, C. H., Jaw, D. H., Stringfellow, G. B.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 573 KB

english, 1991

31

High-power cw operation of InGaAs/GaAs surface-emitting lasers with 45° intracavity micro-mirrors

Ou, S. S., Jansen, M., Yang, J. J., Mawst, L. J., Roth, T. J.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 501 KB

english, 1991

32

Beam target interaction during growth of YBa2Cu3O7−x by the laser ablation technique

Cohen, A., Allenspacher, P., Brieger, M. M., Jeuck, I., Opower, H.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 561 KB

english, 1991

33

Doping effect of oxygen or nitrogen impurity in hydrogenated amorphous silicon films

Morimoto, Akiharu, Matsumoto, Minoru, Yoshita, Masahiro, Kumeda, Minoru, Shimizu, Tatsuo

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 569 KB

english, 1991

34

Sub-100 femtosecond pulses from an external-cavity surface-emitting InGaAs/InP multiple quantum well laser with soliton-effect compression

Xiang, W. H., Friberg, S. R., Watanabe, K., Machida, S., Sakai, Y., Iwamura, H., Yamamoto, Y.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 613 KB

english, 1991

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