Volume 59; Issue 22

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Applied Physics Letters
Volume 59; Issue 22

Applied Physics Letters

Volume 59; Issue 22

1

Low energy ion‐assisted deposition of titanium nitride ohmic contacts on alpha (6H)‐silicon carbide

Glass, R. C., Spellman, L. M., Davis, R. F.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 641 KB

english, 1991

2

Electro-optic determination of second and third-order susceptibilities in poled polymer films

RoÌhl, P., Andress, B., Nordmann, J.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 551 KB

english, 1991

3

Highly carbon-doped p-type Ga0.5In0.5As and Ga0.5In0.5P by carbon tetrachloride in gas-source molecular beam epitaxy

Chin, T. P., Kirchner, P. D., Woodall, J. M., Tu, C. W.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 678 KB

english, 1991

4

Submicron probe of polymer adhesion with atomic force microscopy: Dependence on topography and material inhomogeneities

H. A. Mizes, K. Loh, R. J. D. Miller, S. K. Ahuja, E. F. Grabowski

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 703 KB

english, 1991

5

Carrier heating in AlGaAs single quantum well laser diodes

M. P. Kesler, C. S. Harder, E. E. Latta

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 562 KB

english, 1991

6

Electrical characteristics of Si3N4/Si/GaAs metal-insulator-semiconductor capacitor

Mui, D. S. L., Liaw, H., Demirel, A. L., Strite, S., Morkoç, H.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 521 KB

english, 1991

7

Thermal treatment studies of the photoluminescence intensity of porous silicon

Tsai, C., Li, K.-H., Sarathy, J., Shih, S., Campbell, J. C., Hance, B. K., White, J. M.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 519 KB

english, 1991

8

Dynamic reflection high-energy electron diffraction observation of 3C-SiC(001) surface reconstruction under Si2H6 beam irradiation

Yoshinobu, Tatsuo, Izumikawa, Iwao, Mitsui, Hideaki, Fuyuki, Takashi, Matsunami, Hiroyuki

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 605 KB

english, 1991

9

Visible spectrum native-oxide coupled-stripe In0.5(AlxGa1−x)0.5P–In0.5Ga0.5P quantum well heterostructure laser arrays

Kish, F. A., Caracci, S. J., Holonyak, N., Maranowski, S. A., Dallesasse, J. M., Burnham, R. D., Smith, S. C.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 633 KB

english, 1991

10

Properties of p-GaAs/sawtooth doping superlattice/n+-GaAs structure prepared by molecular beam epitaxy

Sun, Chung-Yih, Liu, Wen-Chau

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 621 KB

english, 1991

11

Effects of substrate misorientation on incorporation of ambient oxygen and interfacial roughness in AlGaAs/GaAs heterostructures grown by molecular-beam epitaxy

Chand, Naresh, Chu, S. N. G., Geva, M.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 692 KB

english, 1991

12

Iso-electronic impurity-induced disordering: AlxGa1−xAs-GaAs/In

Tang, T. K., Alwan, J. J., Herzinger, C. M., Cockerill, T. M., Crook, A., DeTemple, T. A., Coleman, J. J., Baker, J. E.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 620 KB

english, 1991

13

Properties of a new high-efficiency vacuum ultraviolet fluorine lamp excited by a microwave discharge

Kumagai, Hiroshi, Toyoda, Koichi

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 639 KB

english, 1991

14

Controlling the sulphur content of ZnSe1−ySy epitaxial layers grown by metalorganic chemical vapor deposition using diethyl selenide, hydrogen sulphide, and dimethylzinc

Yates, H. M., Williams, J. O., Cole-Hamilton, D. J.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 518 KB

english, 1991

15

Wavelength tuning in low threshold current, partially pumped InGaAs/AlGaAs ridge waveguide lasers

Williams, R. L., Moss, D., Dion, M., Buchanan, M., Dzurko, K.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 591 KB

english, 1991

16

Polarization-independent optical waveguide intensity switch with parabolic quantum well

Tada, Kunio, Nishimura, Shinji, Ishikawa, Takuya

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 545 KB

english, 1991

17

Robust superconducting tapes based on Bi2Sr2Ca2Cu3O10−δ

Li, Qiang, Ostenson, J. E., Fang, M. M., Finnemore, D. K.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 568 KB

english, 1991

18

Metallic tungsten phosphide films formed by spin coating peroxopolytungstic acid on InP

Karlicek, R. F., Williams, K., Baiocchi, F. A., Thomas, P. M., Nakahara, S.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 652 KB

english, 1991

19

Dissociation of P-H, As-H, and Sb-H complexes in n-type Si

Pearton, S. J., Lopata, J.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 615 KB

english, 1991

20

High reflectivity 1.55 μm InP/InGaAsP Bragg mirror grown by chemical beam epitaxy

Choa, F. S., Tai, K., Tsang, W. T., Chu, S. N. G.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 585 KB

english, 1991

21

LaSrGaO4 substrate gives oriented crystalline YBa2Cu3O7−y films

Hontsu, S., Ishii, J., Kawai, T., Kawai, S.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 3.73 MB

english, 1991

22

Realization of a photovoltaic transistor based on a steady-state internal polarization effect in asymmetric semiconductor superlattices

Liu, C. T., Liu, J. M., Cho, A. Y.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 630 KB

english, 1991

23

InGaAs/GaAs/InGaP multiple-quantum-well lasers prepared by gas-source molecular beam epitaxy

Kuo, J. M., Chen, Y. K., Wu, M. C., Chin, M. A.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 453 KB

english, 1991

24

Electron-cyclotron-resonance plasma-enhanced chemical vapor deposition of epitaxial Si without substrate heating by ultraclean processing

Fukuda, Koichi, Murota, Junichi, Ono, Shoichi, Matsuura, Takashi, Uetake, Hiroaki, Ohmi, Tadahiro

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 551 KB

english, 1991

25

Symmetric Si/Si1−xGex two-dimensional hole gases grown by rapid thermal chemical vapor deposition

Venkataraman, V., Schwartz, P. V., Sturm, J. C.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 519 KB

english, 1991

26

Optical parametric amplification in a lithium triborate crystal tunable from 0.65 to 2.5 μm

Lin, Shujie, Huang, J. Y., Ling, Jiwu, Chen, Chaungtian, Shen, Y. R.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 485 KB

english, 1991

27

Optical time-division demultiplexing using second-order-optical nonlinear effects

Lin, Hong, Smith, John Stephen

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 558 KB

english, 1991

28

High-purity InP layer grown by metalorganic chemical vapor deposition using tertiarybutylphosphine

Imori, Toru, Ninomiya, Takayuki, Ushikubo, Kouhei, Kondoh, Kazuhiro, Nakamura, Kouichi

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 498 KB

english, 1991

29

Electrical characterization of metal-insulator-semiconductor diodes fabricated from laser-ablated YBa2Cu3O7−δ /yttria-stabilized zirconia films on Si substrates

Ajimine, Eric M., Pagaduan, Felino E., Rahman, M. M., Yang, Cary Y., Inokawa, Hiroshi, Fork, David K., Geballe, T. H.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 571 KB

english, 1991

30

All-optical sub-Tbits/s serial-to-parallel conversion using excitonic giant nonlinearity

Ema, K., Kuwata-Gonokami, M., Shimizu, F.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 554 KB

english, 1991

31

Coherent high-power arrays of InGaAs/InGaAsP multiquantum-well grating-surface-emitting diode lasers operating at λ=1.5 μm

Vangieson, E. A., Palfrey, S. L., Enstrom, R. E., Hammer, J. M., Martinelli, Ramon U., Carlson, N. W., Evans, G. A., Andrews, J. T., Appert, J., Stolzenberger, R., Triano, A.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 553 KB

english, 1991

32

Mechanisms affecting long conduction time plasma opening switches

Parks, Donald, Waisman, Eduardo, Katz, Ira

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 577 KB

english, 1991

33

GaAs quantum well laser and heterojunction bipolar transistor integration using molecular beam epitaxial regrowth

Berger, Paul R., Dutta, N. K., Sivco, D. L., Cho, A. Y.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 614 KB

english, 1991

34

Swelling of plasma-polymerized tetrafluoroethylene films

Butler, M. A., Buss, R. J., Seager, C. H.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 630 KB

english, 1991

35

Cation interdiffusion in GaAs-AlAs superlattices measured with Raman spectroscopy

Grant, J., Menéndez, J., Pfeiffer, L. N., West, K. W., Molinari, E., Baroni, S.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 673 KB

english, 1991

36

Ion implantation profile modeling of nitrocellulose coated substrates

Merhari, L., Le Hüe, C., Belorgeot, C., Bahna, Z.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 600 KB

english, 1991

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