Volume 59; Issue 7

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Applied Physics Letters
Volume 59; Issue 7

Applied Physics Letters

Volume 59; Issue 7

1

Tunneling between totally quantized levels in GaAs/AlGaAs asymmetric triple‐barrier heterostructures in high magnetic fields

Asahi, H., Tewordt, M., Syme, R. T., Kelly, M. J., Law, V. J., Mace, D. R., Frost, J. E. F., Ritchie, D. A., Jones, G. A. C., Pepper, M.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 709 KB

english, 1991

2

Porous silicon membranes

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 595 KB

english, 1991

3

Operation of five individual diode lasers as a coherent ensemble by fiber coupling into an external cavity

Corcoran, C. J., Rediker, R. H.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 626 KB

english, 1991

4

Resonance effects in Raman scattering from polycrystalline diamond films

Wagner, J., Wild, C., Koidl, P.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 490 KB

english, 1991

5

Reflectance modulator based on tandem Fabry-Perot resonators

I. J. Fritz, J. F. Klem, J. R. Wendt

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 652 KB

english, 1991

6

Generation of steerable submillimeter waves from semiconductor surfaces by spatial light modulators

Zhang, X.-C., Auston, D. H.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 580 KB

english, 1991

7

Low-temperature growth of GexSi1−x/Si heterostructures on Si(100) by remote plasma-enhanced chemical vapor deposition

Kinosky, D., Qian, R., Irby, J., Hsu, T., Anthony, B., Banerjee, S., Tasch, A., Magee, C., Grove, C. L.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 684 KB

english, 1991

8

Microtransport induced by ultrasonic Lamb waves

Moroney, R. M., White, R. M., Howe, R. T.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 591 KB

english, 1991

9

High intensity generation of 9–13 Å x-rays from BaF2 targets

Zigler, A., Burkhalter, P. G., Nagel, D. J., Boyer, K., Luk, T. S., McPherson, A., Solem, J. C., Rhodes, C. K.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 567 KB

english, 1991

10

Dispersive charge injection model for hydrogenated amorphous silicon/amorphous silicon dioxide thin-film transistor instability

Fortunato, G., Mariucci, L., Reita, C.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 671 KB

english, 1991

11

Near-unity quantum efficiency of AlGaAs/GaAs quantum well infrared detectors using a waveguide with a doubly periodic grating coupler

Andersson, J. Y., Lundqvist, L.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 590 KB

english, 1991

12

Étalon enhancement of nonlinear optical response in Bi1−xSbx

Youngdale, E. R., Meyer, J. R., Hoffman, C. A., Bartoli, F. J., Partin, D. L., Thrush, C. M., Heremans, J. P.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 705 KB

english, 1991

13

Gettering thresholds for transition metals by oxygen-related defects in silicon

Falster, R. J., Fisher, G. R., Ferrero, G.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 575 KB

english, 1991

14

Silicon Mach–Zehnder waveguide interferometers based on the plasma dispersion effect

Treyz, G. V., May, P. G., Halbout, Jean-Marc

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 545 KB

english, 1991

15

Long switching delay mechanisms for optically triggered GaAs thyristors

Carson, R. F., Hughes, R. C., Weaver, H. T., Keshavarez, A. A.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 542 KB

english, 1991

16

Ultraviolet absorption studies on photosensitive germanosilicate preforms and fibers

Williams, D. L., Davey, S. T., Kashyap, R., Armitage, J. R., Ainslie, B. J.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 606 KB

english, 1991

17

High-energy product ThMn12 Sm-Fe-T and Sm-Fe permanent magnets synthesized as oriented sputtered films

Cadieu, F. J., Hegde, H., Navarathna, A., Rani, R., Chen, K.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 605 KB

english, 1991

18

Semiconducting properties of sol-gel derived vanadium silicate glasses

Ghosh, A., Chakravorty, D.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 477 KB

english, 1991

19

Digital logic with YBa2Cu3O7−x dc SQUIDs

Schwarzbek, S. M., Davidheiser, R. A., Fischer, G. R., Luine, J. A., Schneier, N. J.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 674 KB

english, 1991

20

Erratum: Visible light emission from semiconducting polymer diodes [Appl. Phys. Lett. 58, 1982 (1991)]

Braun, D., Heeger, A. J.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 292 KB

english, 1991

21

Carrier gas-free chemical vapor deposition technique for in situ preparation of high quality YBa2Cu3O7−δ thin films

Schulte, B., Maul, M., Becker, W., Schlosser, E. G., Elschner, S., Häussler, P., Adrian, H.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 536 KB

english, 1991

22

Heteroepitaxy of carbon on copper by high-temperature ion implantation

Lee, S.-Tong, Chen, Samuel, Braunstein, G., Feng, X., Bello, I., Lau, W. M.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 630 KB

english, 1991

23

Far-infrared photoresponse of the InAs/GaInSb superlattice

Campbell, I. H., Sela, I., Laurich, B. K., Smith, D. L., Bolognesi, C. R., Samoska, L. A., Gossard, A. C., Kroemer, H.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 626 KB

english, 1991

24

p-type doping of germanium grown by molecular beam epitaxy on Ge(100) substrates

Kesan, V. P., Iyer, S. S., Cotte, J. M.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 623 KB

english, 1991

25

Direct type II–indirect type I conversion of InP/GaAs/InP strained quantum wells induced by hydrostatic pressure

Gerling, M., Pistol, M.-E., Samuelson, L., Seifert, W., Fornell, J.-O., Ledebo, L.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 592 KB

english, 1991

26

Intensity and temperature dependence of photodegradation of amorphous silicon solar cells under intense illumination

Yang, L., Chen, L., Catalano, A.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 607 KB

english, 1991

27

Giant anisotropies in the dielectric properties of quasi-epitaxial crystalline organic semiconductor thin films

Zang, D. Y., So, F. F., Forrest, S. R.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 631 KB

english, 1991

28

Preparation of a-axis oriented Y1Ba2Cu3O7−δ films by laser metalorganic chemical vapor deposition

Ushida, T., Higa, H., Higashiyama, K., Hirabayashi, I., Tanaka, S.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 555 KB

english, 1991

29

Assessment of compositional disorder in AlxGa1−xAs superlattices from the analysis of Raman spectra

Miglio, L., Molteni, C., Bernasconi, M.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 581 KB

english, 1991

30

Photoluminescence lifetime of AlAs/GaAs disordered superlattices

Kasu, Makoto, Yamamoto, Teiji, Noda, Susumu, Sasaki, Akio

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 598 KB

english, 1991

31

Electrical conduction in undoped diamond films prepared by chemical vapor deposition

Muto, Y., Sugino, T., Shirafuji, J., Kobashi, K.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 573 KB

english, 1991

32

Electrical properties of distributed electron cyclotron resonance plasma-deposited SiO2-InP diodes

Plais, F., Agius, B., Proust, N., Cassette, S., Ravel, G., Puech, M.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 516 KB

english, 1991

33

Metal-induced dislocation nucleation for metastable SiGe/Si

Higgs, V., Kightley, P., Goodhew, P. J., Augustus, P. D.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 736 KB

english, 1991

34

Photon-assisted nitridation of GaAs(100) at liquid-nitrogen temperature

Ruckman, M. W., Cao, Jianming, Park, Ken T., Gao, Yongli, Wicks, G. W.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 581 KB

english, 1991

35

Direct deposition of polycrystalline diamond films on Si(100) without surface pretreatment

Rudder, R. A., Hudson, G. C., Posthill, J. B., Thomas, R. E., Markunas, R. J.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 603 KB

english, 1991

36

Modulated beam epitaxial growth of high quality GaAs single quantum wells at low temperature

Longenbach, K. F., Xin, S., Schwartz, C., Jiang, Y., Wang, W. I.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 659 KB

english, 1991

37

Characterization of Si/SiGe strained-layer superlattices grown by ultrahigh vacuum/chemical vapor deposition technique

Wang, P. J., Goorsky, M. S., Meyerson, B. S., LeGoues, F. K., Tejwani, M. J.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 706 KB

english, 1991

38

Heavily phosphorus-doped epitaxial Si deposited by low-temperature plasma-enhanced chemical vapor deposition

Baert, K., Vanhellemont, J., Vandervorst, W., Nijs, J., Konagai, M.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 595 KB

english, 1991

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