Volume 60; Issue 25

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Applied Physics Letters
Volume 60; Issue 25

Applied Physics Letters

Volume 60; Issue 25

1

Photoluminescence spectra from porous silicon (111) microstructures: Temperature and magnetic‐field effects

Perry, Clive H., Lu, Feng, Namavar, Fereydoon, Kalkhoran, Nader M., Soref, Richard A.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 605 KB

english, 1992

2

On the ââband-Aââ emission and boron related luminescence in diamond

Ruan, J., Kobashi, Koji, Choyke, W. J.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 639 KB

english, 1992

3

Selective low pressure chemical vapor deposition of copper: Effect of added water vapor in hydrogen or helium carrier gas

Lecohier, B., Calpini, B., Philippoz, J.-M., Stumm, T., van den Bergh, H.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 631 KB

english, 1992

4

Stress relaxation in Mo/Si multilayer structures

Kola, R. R., Windt, D. L., Waskiewicz, W. K., Weir, B. E., Hull, R., Celler, G. K., Volkert, C. A.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 745 KB

english, 1992

5

Cholesteric liquid crystal/polymer dispersion for haze-free light shutters

Yang, D.-K., Chien, L.-C., Doane, J. W.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 499 KB

english, 1992

6

In situ diamond growth rate measurement using emission interferometry

K. A. Snail, C. M. Marks

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 689 KB

english, 1992

7

Optoelectronic devices based on type II polytype tunnel heterostructures

Ohno, H., Esaki, L., Mendez, E. E.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 658 KB

english, 1992

8

Room-temperature 1.3 μm electroluminescence from strained Si1−xGex/Si quantum wells

Mi, Q., Xiao, X., Sturm, J. C., Lenchyshyn, L. C., Thewalt, M. L. W.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 579 KB

english, 1992

9

Far infrared photoelectric thresholds of extrinsic semiconductor photocathodes

Perera, A. G. U., Sherriff, R. E., Francombe, M. H., Devaty, R. P.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 667 KB

english, 1992

10

Linear electro-optic effects in polymer-dispersed ferroelectric liquid crystals

Kitzerow, Heinz-S., Molsen, Henning, Heppke, Gerd

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 633 KB

english, 1992

11

Comparison of magnetic and electric field induced switching in polymer dispersed liquid crystal films

Li, Zili, Kelly, J. R., Palffy-Muhoray, P., Rosenblatt, C.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 611 KB

english, 1992

12

Γ effect: Key intermodal-discrimination mechanism in arrays of antiguided diode lasers

Botez, D., Mawst, L. J.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 614 KB

english, 1992

13

Critical layer thickness on (111)B-oriented InGaAs/GaAs heteroepitaxy

Anan, Takayoshi, Nishi, Kenichi, Sugou, Sigeo

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 666 KB

english, 1992

14

Measurement of temporal coherence of light with copolarized and cross-polarized beams using cw laser-induced gratings

Rao, K. Divakara, Gurjar, Rajan S., Bihari, Bipin, Kumar, G. Ravindra, Sharma, K. K.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 668 KB

english, 1992

15

Co-lasing in an electrically tunable erbium-doped fiber laser

Dawson, Jay W., Park, Namkyoo, Vahala, Kerry J.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 576 KB

english, 1992

16

First-order phase transition in a laser threshold

Deppe, D. G., Huffaker, D. L., Rogers, T. J., Lei, C., Huang, Z., Streetman, B. G.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 673 KB

english, 1992

17

Anomalous electric field and temperature dependence of collector multiplication in InP/Ga0.47In0.53As heterojunction bipolar transistors

Ritter, D., Hamm, R. A., Feygenson, A., Panish, M. B.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 540 KB

english, 1992

18

Pressure dependence of energy gap for Cd0.7Hg0.3Te

Jiang, S., Shen, S. C., Li, D., Ju, Y. Q., Zhu, Haorong, Schilz, J.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 630 KB

english, 1992

19

Composite reaction texturing of superconducting ceramic composites

Soylu, B., Adamopoulos, N., Glowacka, D. M., Evetts, J. E.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 628 KB

english, 1992

20

Micromachined vertical hall magnetic field sensor in standard complementary metal oxide semiconductor technology

Paranjape, M., Ristic, Lj.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 548 KB

english, 1992

21

Ultrafast reversible phase change in GeSb films for erasable optical storage

Afonso, C. N., Solis, J., Catalina, F., Kalpouzos, C.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 982 KB

english, 1992

22

Rapid modulation of interband optical properties of quantum wells by intersubband absorption

Gorfinkel, Vera B., Luryi, Serge

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 555 KB

english, 1992

23

Surface structure of hydrated amorphous silicon oxide at 3 Å resolution by scanning force microscopy

Tillmann, Ralf W., Radmacher, Manfred, Gaub, Hermann E.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 717 KB

english, 1992

24

Thermally stable operation of a bistable Fabry–Perot etalon with a bulk GaAs spacer

Acklin, B., Bagnoud, C., Dupertuis, M. A., Proctor, M., Morier-Genoud, F., Martin, D.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 537 KB

english, 1992

25

Low-dislocation-density silicon-on-insulator material produced by sequential oxygen implantation and low-temperature annealing

Venables, D., Jones, K. S., Namavar, F.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 707 KB

english, 1992

26

MgO epitaxial thin films on (100) GaAs as a substrate for the growth of oriented PbTiO3

Hsu, Wei-Yung, Raj, Rishi

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 547 KB

english, 1992

27

Reproducible growth of high quality YBa2Cu3O7−x film on (100) MgO with a SrTiO3 buffer layer by pulsed laser deposition

Cheung, Jeffrey T., Gergis, Isoris, James, M., DeWames, Roger E.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 541 KB

english, 1992

28

Astigmatically compensated, high gain cooperative upconversion laser

Xie, P., Rand, S. C.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 569 KB

english, 1992

29

Epitaxial growth of MgO on (100)GaAs using ultrahigh vacuum electron-beam evaporation

Hung, L. S., Zheng, L. R., Blanton, T. N.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 581 KB

english, 1992

30

Dependence on doping type (p/n) of the water vapor oxidation of high-gap AlxGa1−xAs

Kish, F. A., Maranowski, S. A., Höfler, G. E., Holonyak, N., Caracci, S. J., Dallesasse, J. M., Hsieh, K. C.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 637 KB

english, 1992

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