Volume 61; Issue 1

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Applied Physics Letters
Volume 61; Issue 1

Applied Physics Letters

Volume 61; Issue 1

1

Doping mechanisms of tin-doped indium oxide films

Shigesato, Yuzo, Hayashi, Yasuo, Haranoh, Takeshi

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 677 KB

english, 1992

2

Low-temperature metalorganic chemical vapor deposition of perovskite Pb(ZrxTi1âx)O3 thin films

Peng, Chien H., Desu, Seshu B.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 756 KB

english, 1992

3

Visible light emission from a porous silicon/solution diode

Bressers, P. M. M. C., Knapen, J. W. J., Meulenkamp, E. A., Kelly, J. J.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 555 KB

english, 1992

4

Damage accumulation during ion implantation of unstrained Si1−xGex alloy layers

Haynes, T. E., Holland, O. W.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 623 KB

english, 1992

5

Development of near-bamboo and bamboo microstructures in thin-film strips

Walton, D. T., Frost, H. J., Thompson, C. V.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 586 KB

english, 1992

6

In situ optical characterization of GaAs surfaces under alternating supply of GaCl and AsH3

Nishi, Kenichi, Usui, Akira, Sakaki, Hiroyuki

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 648 KB

english, 1992

7

Chemical characterization of (In,Ga)As/(Al,Ga)As strained interfaces grown by metalorganic chemical vapor deposition

Kim, J., Alwan, J. J., Forbes, D. V., Coleman, J. J., Robertson, I. M., Wayman, C. M., Baumann, F. H., Bode, M., Kim, Y., Ourmazd, A.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 627 KB

english, 1992

8

Ultrafast carrier capture and long recombination lifetimes in GaAs quantum wires grown on nonplanar substrates

Christen, J., Grundmann, M., Kapon, E., Colas, E., Hwang, D. M., Bimberg, D.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 635 KB

english, 1992

9

Improved InP regrowth properties in metalorganic vapor phase epitaxy by addition of CCl4

Nordell, N., Borglind, J.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 723 KB

english, 1992

10

Carrier-induced change in index, gain, and lifetime for (InAs)1/(GaAs)4 superlattice lasers

Dutta, N. K., Chand, N., Lopata, J.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 540 KB

english, 1992

11

Effect of silicon source gas on silicon-germanium chemical vapor deposition kinetics at atmospheric pressure

Kamins, T. I., Meyer, D. J.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 601 KB

english, 1992

12

Observation of the fractional quantum Hall effect in Si/SiGe heterostructures

Nelson, S. F., Ismail, K., Nocera, J. J., Fang, F. F., Mendez, E. E., Chu, J. O., Meyerson, B. S.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 511 KB

english, 1992

13

Observation of a new ordered structure in GeSi/Si strained layer superlattice

Zhong, Peixin, Zheng, Youdou, Zhang, Rong, Hu, Liqun

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 516 KB

english, 1992

14

Physical model for defect mediated boron diffusion during rapid thermal annealing of ion implanted BF2

Kinoshita, H., Kwong, D. L.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 599 KB

english, 1992

15

Study of electron traps in semi-insulating gallium-arsenide buffer layers for the suppression of backgating by the zero-bias thermally stimulated current technique

Lau, W. S., Chong, T. C., Tan, L. S., Goo, C. H., Goh, K. S., Lee, K. M.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 614 KB

english, 1992

16

Nonuniformities of native oxides on Si(001) surfaces formed during wet chemical cleaning

Aoyama, T., Yamazaki, T., Ito, T.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 672 KB

english, 1992

17

Photoluminescence of porous Si, oxidized then deoxidized chemically

Nakajima, A., Itakura, T., Watanabe, S., Nakayama, N.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 632 KB

english, 1992

18

Regrowth of a thin InP surface covering layer in the Au/InP system during annealing

Pécz, B., Radnóczi, G., Barna, P. B., Zsoldos, Éva

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 608 KB

english, 1992

19

Electro-optic phenomena in gelatin-based poled polymer

Ho, Z. Z., Chen, Ray T., Shih, Robert

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 600 KB

english, 1992

20

Synchrotron radiation-assisted silicon homoepitaxy at 100 °C using Si2H6/H2 mixture

Nara, Yasuo, Sugita, Yoshihiro, Horiuchi, Kei, Ito, Takashi

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 626 KB

english, 1992

21

Measurement of Schottky barrier energy on InGaP and InGaAlP films lattice matched to GaAs

Nanda, A., Hafich, M. J., Vogt, T. J., Woods, L. M., Patrizi, G. A., Robinson, G. Y.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 600 KB

english, 1992

22

Photoelectric properties in microscopic p-n junctions of organic semiconductors

Saito, Kazuhiro, Sugi, Michio

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 472 KB

english, 1992

23

On the negative differential resistance effect in high-field semiconductor-dielectric systems

Gradinaru, G., Madangarli, V. P., Sudarshan, T. S.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 527 KB

english, 1992

24

In0.35Ga0.65P light-emitting diodes grown by gas-source molecular beam epitaxy

Masselink, W. Ted, Zachau, Martin

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 520 KB

english, 1992

25

Mn substitution effect on magnetostriction temperature dependence in Tb0.3Dy0.7Fe2

Funayama, T., Kobayashi, T., Sakai, I., Sahashi, M.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 410 KB

english, 1992

26

Investigating the cubic anisotropy of the confined hole subbands of an AlAs/GaAs/AlAs quantum well using resonant magnetotunneling spectroscopy

Hayden, R. K., Eaves, L., Henini, M., Takamasu, T., Miura, N., Ekenberg, U.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 569 KB

english, 1992

27

Flowing afterglow synthesis of polythiophene films

Haaland, Peter, Targove, James

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 487 KB

english, 1992

28

Bilayer interference enhanced Raman spectroscopy

Bacsa, W. S., Lannin, J. S.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 559 KB

english, 1992

29

Quantum well electroabsorption modulators at 1.55 μm using single-step selective area chemical beam epitaxial growth

Chen, Y., Zucker, J. E., Chiu, T. H., Marshall, J. L., Jones, K. L.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 501 KB

english, 1992

30

Periodic index separate confinement heterostructure InGaAs/AlGaAs quantum well lasers grown by temperature modulation molecular beam epitaxy

Hong, M., Chen, Y. K., Wu, M. C., Vandenberg, J. M., Chu, S. N. G., Mannaerts, J. P., Chin, M. A.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 670 KB

english, 1992

31

Post-growth annealing of low temperature-grown Sb-doped Si molecular beam epitaxial films

Hobart, K. D., Godbey, D. J., Thompson, P. E.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 653 KB

english, 1992

32

Time-evolved numerical simulation of a two-dimensional electron wave packet through a quantum point contact

Endoh, Akira, Sasa, Shigehiko, Muto, Shunichi

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 656 KB

english, 1992

33

Bistable hot electron transport in InP/GaInAs composite collector heterojunction bipolar transistors

Ritter, D., Hamm, R. A., Feygenson, A., Temkin, H., Panish, M. B., Chandrasekhar, S.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 553 KB

english, 1992

34

Annealing effects on heavily carbon-doped GaAs

Han, W. Y., Lu, Y., Lee, H. S., Cole, M. W., Schauer, S. N., Moerkirk, R. P., Jones, K. A., Yang, L. W.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 653 KB

english, 1992

35

Etching of screw dislocations in YBa2Cu3O7 films with a scanning tunneling microscope

Heyvaert, I., Osquiguil, E., Van Haesendonck, C., Bruynseraede, Y.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 720 KB

english, 1992

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