Volume 61; Issue 10

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Applied Physics Letters
Volume 61; Issue 10

Applied Physics Letters

Volume 61; Issue 10

1

Electron velocity-field characteristics of In0.52Al0.48As

Kim, H. S., Tian, H., Kim, K. W., Littlejohn, M. A.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 626 KB

english, 1992

2

Vacuum-deposited metal/polyaniline Schottky device

Misra, S. C. K., Ram, M. K., Pandey, S. S., Malhotra, B. D., Chandra, Subhas

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 612 KB

english, 1992

3

High repetition rate picosecond laser system at 1983 nm

Tomov, I. V., Anderson, T., Rentzepis, P. M.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 544 KB

english, 1992

4

Noncritical quasiphase-matched second harmonic generation in LiB3O5 crystal at room temperature

Mao, Hongwei, Fu, Fongchen, Wu, Baichang, Chen, Chuangtian

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 508 KB

english, 1992

5

Photoluminescence characterization of gated pseudomorphic AlGaAs/InGaAs/GaAs modulation-doped field-effect transistors

J. M. Gilpérez, J. L. Sánchez-rojas, E. Muñoz, E. Calleja, J. P. R. David, G. Hill, J. Castagné

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 491 KB

english, 1992

6

Frequency stabilization of an internal-mirror He-Ne laser using axial-mode beat

Sasaki, A., Okada, T., Kawai, J., Aoyama, H.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 499 KB

english, 1992

7

Multiquantum well structure with an average electron mobility of 4.0×106 cm2/V s

Pfeiffer, L. N., West, K. W., Eisenstein, J. P., Baldwin, K. W., Gammel, P.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 486 KB

english, 1992

8

Orientation relationships of epitaxial oxide buffer layers on silicon (100) for high-temperature superconducting YBa2Cu3O7−x films

Matthée, Th., Wecker, J., Behner, H., Friedl, G., Eibl, O., Samwer, K.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 726 KB

english, 1992

9

Planar microwave biased radio frequency SQUIDs with a cryogenic preamplifier

Mück, M., Hallmanns, G., Heiden, C., Fontana, G., Cerdonio, M., Mezzena, R., Vitale, S.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 604 KB

english, 1992

10

(001) faceting and Bi2Sr2CuO6+x(Tc=7–22 K) phase formation at the Ag/Bi-Sr-Ca-Cu-O interface in Ag-clad Bi2Sr2CaCu2O8+x(Tc=75–95 K) superconducting tapes

Feng, Y., Larbalestier, D. C., Babcock, S. E., Vander Sande, J. B.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 742 KB

english, 1992

11

Property modification of ferroelectric Pb(Zr,Ti)O3 thin films by low-energy oxygen ion bombardment during film growth

Hu, H., Krupanidhi, S. B.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 516 KB

english, 1992

12

Blue-light stimulated emission from a localized state formed by well-barrier fluctuation in a II-VI semiconductor superlattice

Kuroda, Yasuhide, Suemune, Ikuo, Fujii, Yoshihisa, Fujimoto, Masahiro

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 633 KB

english, 1992

13

Transmission electron diffraction study of C70 phase transformation at low temperature

Tomita, M., Hayashi, T., Gaskell, P., Maruno, T., Tanaka, T.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 644 KB

english, 1992

14

Selective growth of InGaAs/InP heterojunction bipolar transistors with a buried subcollector

Frei, M. R., Hayes, J. R., Song, J.-I., Cox, H. M., Caneau, C.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 670 KB

english, 1992

15

Picosecond large-signal switching characteristics of a pseudomorphic AlGaAs/InGaAs modulated doped field effect transistor

Jackson, M. K., Frankel, M. Y., Whitaker, J. F., Mourou, G. A., Hulin, D., Antonetti, A., Van Hove, M., De Raedt, W., Crozat, P., Hafdallah, H.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 683 KB

english, 1992

16

Time reversal and reciprocity in sound propagation through elastic and porous layers

Allard, Jean F., Brouard, Bruno, Lafarge, Denis, Lauriks, Walter

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 422 KB

english, 1992

17

Observation of dislocation stresses in InP using polarization-resolved photoluminescence

Colbourne, Paul D., Cassidy, Daniel T.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 882 KB

english, 1992

18

High-power coherently coupled 8×8 vertical cavity surface emitting laser array

Morgan, R. A., Kojima, K., Mullally, T., Guth, G. D., Focht, M. W., Leibenguth, R. E., Asom, M.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 697 KB

english, 1992

19

Lateral straggling of B and P ions implanted in channeling and random directions of Si single crystals

Raineri, Vito, Privitera, Vittorio, Rimini, Emanuele

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 495 KB

english, 1992

20

Characteristics of plasma deposited tungsten Schottky contacts to GaAs

Kim, Yong Tae, Lee, Chang Woo, Han, Chul Won, Hong, Jong Sung, Min, Suk-Ki

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 499 KB

english, 1992

21

Minority carrier lifetime and diffusion length in HgTe/CdTe superlattices by molecular beam epitaxy

Shin, S. H., Arias, J. M., Zandian, M., Pasko, J. G., Bajaj, J., DeWames, R. E.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 618 KB

english, 1992

22

Influence of iodine implantation on the properties of polypropylene

Švorč́̌ik, V., Rybka, V., Volka, K., Hnatowicz, V., Kvítek, J., Peřina, V.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 533 KB

english, 1992

23

Ge segregation and its suppression in GaAs epilayers grown on Ge(111) substrate

Kawai, T., Yonezu, H., Yoshida, H., Pak, K.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 520 KB

english, 1992

24

YBa2Cu3O7−δ films on Si with Y-stabilized ZrO2 and Y2O3 buffer layers: High-resolution electron microscopy of the interfaces

Bardal, A., Zwerger, M., Eibl, O., Wecker, J., Matthée, Th.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 865 KB

english, 1992

25

Visible photoluminescence from porous silicon: A quantum confinement effect mainly due to holes?

Voos, M., Uzan, Ph., Delalande, C., Bastard, G., Halimaoui, A.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 551 KB

english, 1992

26

High-power multiple-quantum-well GaInAsSb/AlGaAsSb diode lasers emitting at 2.1 μm with low threshold current density

Choi, H. K., Eglash, S. J.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 468 KB

english, 1992

27

Small-signal predictions of the well-barrier hole burning model on quantum-well laser dynamics

Vassell, M. O., Sharfin, W. F., Rideout, W., Lee, Johnson

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 582 KB

english, 1992

28

Ultraviolet defined selective in-diffusion of organic dyes in polyimide for applications in optical interconnection technology

Chakravorty, K. K.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 547 KB

english, 1992

29

Formation of zinc clusters in ionized cluster beam film deposition

Urban, Frank K., Feng, Susan W., Nainaparampil, Josekutty J.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 432 KB

english, 1992

30

Gallium desorption during growth of (Al,Ga)As by molecular beam epitaxy

Reithmaier, J.-P., Broom, R. F., Meier, H. P.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 615 KB

english, 1992

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