Volume 61; Issue 16

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Applied Physics Letters
Volume 61; Issue 16

Applied Physics Letters

Volume 61; Issue 16

1

Scanning Hall probe microscopy

Chang, A. M., Hallen, H. D., Harriott, L., Hess, H. F., Kao, H. L., Kwo, J., Miller, R. E., Wolfe, R., van der Ziel, J., Chang, T. Y.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 717 KB

english, 1992

2

Electronic structure and optical properties of silicon crystallites: Application to porous silicon

Proot, J. P., Delerue, C., Allan, G.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 715 KB

english, 1992

3

New oxide phase with wide band gap and high electroconductivity, MgIn2O4

Ueda, Naoyuki, Omata, Takahisa, Hikuma, Naoko, Ueda, Kazushige, Mizoguchi, Hiroshi, Hashimoto, Takuya, Kawazoe, Hiroshi

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 486 KB

english, 1992

4

Novel technique for preparing porous silicon

Hummel, R. E., Chang, Sung-Sik

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 639 KB

english, 1992

5

Hard x-ray phase zone plate fabricated by lithographic techniques

Lai, B., Yun, W. B., Legnini, D., Xiao, Y., Chrzas, J., Viccaro, P. J., White, V., Bajikar, S., Denton, D., Cerrina, F.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 596 KB

english, 1992

6

Feature size effects on selective area epitaxy of InGaAs

Cotta, M. A., Harriott, L. R., Wang, Y. L., Hamm, R. A., Wade, H. H., Weiner, J. S., Ritter, D., Temkin, H.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 581 KB

english, 1992

7

Effects of ordering on the operation of AlGaInP lasers grown by metalorganic chemical vapor deposition

Nakano, K., Toda, A., Yamamoto, T., Ishibashi, A.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 591 KB

english, 1992

8

Optical properties of the buried waveguide in a bistable InGaAsP semiconductor laser

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 554 KB

english, 1992

9

Observation of polarization independent electric field effect in InGaAs/InP tensile strained quantum well and its proposal for optical switch

Ravikumar, K. G., Aizawa, T., Suzaki, S., Yamauchi, R.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 542 KB

english, 1992

10

Annealing effect on the carrier concentration in heavily Si-doped n+-InGaAs

Watanabe, Noriyuki, Nittono, Takumi, Watanabe, Kazuo

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 654 KB

english, 1992

11

1.5 μm diode laser-based nonlinear frequency conversions by using potassium titanyl phosphate

Wang, Weizhi, Nakagawa, Ken’ichi, Toda, Yasunori, Ohtsu, Motoichi

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 587 KB

english, 1992

12

Molecular beam epitaxial growth of superconducting Ba2DyCu3O6.5 thin films at 420 °C using NO2 as an oxidant

Norimoto, Kei-ichiro, Sekine, Rika, Mori, Masami, Hanada, Takashi, Kudo, Masahiro, Kawai, Maki

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 575 KB

english, 1992

13

Oxidizer partial pressure window for YBa2Cu3O7−x thin film formation by metalorganic chemical vapor deposition

Chern, C. S., Zhao, J., Norris, P. E., Garrison, S. M., Yau, K., Li, Y. Q., Gallois, B. M., Kear, B. H.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 676 KB

english, 1992

14

High reflectivity broadband self-pumped phase conjugator in near-infrared wavelengths

Shih, Y. H., He, X. H., Zhang, H. Y.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 493 KB

english, 1992

15

Comparison between theory and experiment for InGaAs/InP self-electro-optic effect devices

Mares, P. J., Chuang, S. L.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 586 KB

english, 1992

16

Phase stability limits of Bi2Sr2Ca1Cu2O8+δ and Bi2Sr2Ca2Cu3O10+δ

Rubin, L. M., Orlando, T. P., Vander Sande, J. B., Gorman, G., Savoy, R., Swope, R., Beyers, R.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 591 KB

english, 1992

17

Effects of annealing on the surface morphology of decapped GaAs(001)

Yang, Y.-N., Luo, Y. S., Weaver, J. H., Florez, L. T., Palmstro̸m, C. J.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 687 KB

english, 1992

18

Double modulation-doped AlGaAs/InGaAs heterostructure with a graded composition in the quantum well

Yoo, Tae-Kyung, Mandeville, Pierre, Park, Hyunchang, Schaff, William J., Eastman, Lester F.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 644 KB

english, 1992

19

Depth and radial profiles of defects in Czochralski-grown silicon

Sharma, S. C., Hyer, R. C., Hozhabri, N., Pas, M. F., Kim, S.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 612 KB

english, 1992

20

Linewidth broadening factor of a microcavity semiconductor laser

Jin, R., Boggavarapu, D., Khitrova, G., Gibbs, H. M., Hu, Y. Z., Koch, S. W., Peyghambarian, N.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 585 KB

english, 1992

21

Frequency stabilization, linewidth reduction, and fine detuning of a semiconductor laser by using velocity-selective optical pumping of atomic resonance line

Kozuma, M., Kourogi, M., Ohtsu, M., Hori, H.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 519 KB

english, 1992

22

Switchable bicolor infrared detector using an electron transfer infrared modulator

Berger, V., Vodjdani, N., Bois, P., Vinter, B., Delaitre, S.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 552 KB

english, 1992

23

Epitaxial growth of strain-free Ge films on Si substrates by solid phase epitaxy at ultrahigh pressure

Ishiwara, Hiroshi, Sato, Takayoshi, Sawaoka, Akira

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 492 KB

english, 1992

24

Reactive ion etching end-point determination by plasma impedance monitoring

Patel, V., Singh, B., Thomas, J. H.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 513 KB

english, 1992

25

Layer-by-layer growth of epitaxial SnO2 on sapphire by reactive sputter deposition

Cavicchi, R. E., Semancik, S., Antonik, M. D., Lad, R. J.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 639 KB

english, 1992

26

Far-infrared Fabry–Perot resonator with high Tc YBa2Cu3O7−δ films on silicon plates

Pechen, E. V., Vent, S., Brunner, B., Prückl, A., Lipp, S., Lindner, G., Alexandrov, O., Schützmann, J., Renk, K. F.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 583 KB

english, 1992

27

Proposal and verification of a new visible light emitter based on wide band gap II-VI semiconductors

Phillips, M. C., Wang, M. W., Swenberg, J. F., McCaldin, J. O., McGill, T. C.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 553 KB

english, 1992

28

Picosecond signal recovery in type II tunneling bi-quantum well etalon

Tackeuchi, Atsushi, Inata, Tsuguo, Nakata, Yoshiaki, Nakamura, Satoshi, Sugiyama, Yoshihiro, Muto, Shunichi

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 514 KB

english, 1992

29

Observation of quantum wire formation at intersecting quantum wells

Goñi, A. R., Pfeiffer, L. N., West, K. W., Pinczuk, A., Baranger, H. U., Stormer, H. L.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 623 KB

english, 1992

30

Suppressing of island formation in surfactant-controlled solid phase epitaxy of germanium on Si(100)

Osten, H. J., Bugiel, E., Klatt, J.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 682 KB

english, 1992

31

Third-order optical nonlinearities of a processable main chain polymer with symmetrically substituted tris-azo dyes

Kurihara, Takashi, Tomaru, Satoru, Mori, Yuhei, Hikita, Makoto, Kaino, Toshikuni

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 576 KB

english, 1992

32

Evidence for state filling effect on high speed modulation dynamics of quantum well lasers

Zhao, B., Chen, T. R., Yamada, Y., Zhuang, Y. H., Kuze, N., Yariv, A.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 610 KB

english, 1992

33

Photostructural defect states and residual potential in chlorine and arsenic doped amorphous selenium films

Chand, Suresh, Sharma, G. D., Batheja, R. C., Chandra, Subhas

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 594 KB

english, 1992

34

Reduction of the intensity noise from an erbium-doped fiber laser to the standard quantum limit by intracavity spectral filtering

Sanders, Steve, Park, Namkyoo, Dawson, Jay W., Vahala, Kerry J.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 573 KB

english, 1992

35

High-resolution transmission electron microscopy study of the radiation damage defects in high temperature superconductors

Zhao, Y. J., Chu, W. K., Liu, J. R., Kulik, J., Zandbergen, H., Tao, Y. K.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 839 KB

english, 1992

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