Volume 61; Issue 4

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Applied Physics Letters
Volume 61; Issue 4

Applied Physics Letters

Volume 61; Issue 4

1

Enhanced second‐order optical nonlinearity using inter‐ and intra‐band transitions in low‐dimensional semiconductors

Shimizu, Akira, Kuwata‐Gonokami, Makoto, Sakaki, Hiroyuki

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 659 KB

english, 1992

2

Injection mechanism at contacts in a quantum-well intersubband infrared detector

Rosencher, E., Luc, F., Bois, Ph., Delaitre, S.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 676 KB

english, 1992

3

Technique for lateral temperature profiling in optoelectronic devices using a photoluminescence microprobe

Hall, D. C., Goldberg, L., Mehuys, D.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 565 KB

english, 1992

4

Single-frequency optical parametric oscillator

Bosenberg, W. R., Guyer, D. R.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 589 KB

english, 1992

5

Control of surface particle density in pulsed laser deposition of superconducting YBa2Cu3O7 and diamondlike carbon thin films

Singh, Rajiv K., Bhattacharya, D., Narayan, J.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 758 KB

english, 1992

6

Highly sensitive photodetector using porous silicon

Zheng, J. P., Jiao, K. L., Shen, W. P., Anderson, W. A., Kwok, H. S.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 516 KB

english, 1992

7

Existence of a photonic band gap in two dimensions

Meade, Robert D., Brommer, Karl D., Rappe, Andrew M., Joannopoulos, J. D.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 689 KB

english, 1992

8

Regenerative switching properties of a sawtooth-doping-superlattice-collector bipolar transistor

Liu, Wen-Chau, Sun, Chung-Yih, Guo, Der-Feng

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 698 KB

english, 1992

9

Photoinduced grating and intensity dependence of defect generation in Ge-doped silica optical fiber

Tsai, T. E., Askins, C. G., Friebele, E. J.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 556 KB

english, 1992

10

Molecular beam epitaxy growth interrupt and temperature studies on doped and undoped single quantum well pseudomorphic structures

Miller, B. A., Kirby, P. B.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 626 KB

english, 1992

11

Minority electron transport in InP/InGaAs heterojunction bipolar transistors

Dodd, Paul, Lundstrom, Mark

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 597 KB

english, 1992

12

In situ electron beam patterning for GaAs using electron-cyclotron-resonance plasma-formed oxide mask and Cl2 gas etching

Kohmoto, S., Takado, N., Sugimoto, Y., Ozaki, M., Sugimoto, M., Asakawa, K.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 626 KB

english, 1992

13

GaAs microcavity quantum-well laser with enhanced coupling of spontaneous emission to the lasing mode

Horowicz, R. J., Heitmann, H., Kadota, Y., Yamamoto, Y.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 572 KB

english, 1992

14

Simultaneous measurement of electron and hole escape times from biased single quantum wells

Cavaillès, J. A., Miller, D. A. B., Cunningham, J. E., Kam Wa, P. Li, Miller, A.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 664 KB

english, 1992

15

Laser-deposited PrGaO3 films on SrTiO3 substrates and in YBa2Cu3O7/PrGaO3/YBa2Cu3O7 trilayers

Brorsson, G., Nilsson, P. Å., Olsson, E., Wang, S. Z., Claeson, T., Löfgren, M.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 689 KB

english, 1992

16

Tera-hertz GaAs metal-semiconductor-metal photodetectors with 25 nm finger spacing and finger width

Chou, S. Y., Liu, Y., Fischer, P. B.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 669 KB

english, 1992

17

Molecular beam epitaxy of (211)-InAs quantum sheets in GaAs

Ilg, M., Brandt, O., Ploog, K.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 583 KB

english, 1992

18

Modification of HF-treated silicon (100) surfaces by scanning tunneling microscopy in air under imaging conditions

Barniol, N., Pérez-Murano, F., Aymerich, X.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 635 KB

english, 1992

19

Generation and measurement of picosecond voltage pulses in YBa2Cu3O7 thin films

Shi, L., Huang, G. L., Lehane, C., Zheng, J. P., Kwok, H. S.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 533 KB

english, 1992

20

Confinement and strain profiles produced by cation interdiffusion in In0.53Ga0.47As/InP quantum wells

Micallef, Joseph, Li, E. Herbert, Weiss, Bernard L.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 581 KB

english, 1992

21

Rapid thermal annealing and the anomalous threshold voltage shift of metal-oxide-semiconductor structure in n+ polycrystalline silicon gate complementary metal-oxide-semiconductor technology

Fang, Y. K., Hsieh, J. C., Chen, C. W., Koung, C. H., Tsai, N. S., Lee, J. Y., Tseng, F. C.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 595 KB

english, 1992

22

Growth of InAs on diamond (001) by molecular beam epitaxy

Williams, K. E., Tarsa, E. J., Speck, J. S.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 712 KB

english, 1992

23

Diffractive elements for annular laser beam transformation

Davidson, N., Friesem, A. A., Hasman, E.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 467 KB

english, 1992

24

Point source heating effects in multiple quantum well modulators

Sizer, T., LaMarche, R. E., Woodward, T. K.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 623 KB

english, 1992

25

Long range gallium segregation in the AlAs layers of GaAs/AlAs superlattices

Jusserand, Bernard, Mollot, Francis

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 579 KB

english, 1992

26

Sputter deposition of epitaxial waveguiding KNbO3 thin films

Schwyn Thöny, S., Lehmann, H. W., Günter, P.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 566 KB

english, 1992

27

Electron beam modification of the Schottky diode characteristics of diamond

Glesener, J. W., Morrish, A. A., Snail, K. A.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 493 KB

english, 1992

28

Raman scattering study of strain in ZnxCd1−xTe/CdTe superlattices

Trofimov, I. E., Petrov, M. V., Balakirev, F. F., Milokhin, A. E., Kuzmin, V. D.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 480 KB

english, 1992

29

New analog memory devices demonstrated using heterojunction acoustic charge transport device technology

Cullen, D. E., Miller, M. J.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 574 KB

english, 1992

30

Epitaxy-induced phase of near-stoichiometry PbTiO3 films prepared by metalorganic chemical vapor deposition

Bai, G. R., Chang, H. L. M., Kim, H. K., Foster, C. M., Lam, D. J.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 531 KB

english, 1992

31

Compression of pulses from a mode locked GaAs laser diode in an extended cavity with a fiber grating reflector

Carter, Gary M., Zheng, Liu, Huang, Kao-Yang

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 439 KB

english, 1992

32

Electromigration-induced failure in passivated aluminum-based metallizations−The dependence on temperature and current density

Li, C.-Y., Bo̸rgesen, P., Korhonen, M. A.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 574 KB

english, 1992

33

Improvement of punchthrough-induced gate-oxide breakdown in n-channel metal-oxide-semiconductor field-effect transistors using rapid thermal nitridation

Huang, M. Q., Lai, P. T., Ma, Z. J., Wong, H., Cheng, Y. C.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 559 KB

english, 1992

34

Superlattice band structure probed by tunneling hot-electron injection

Kuan, C. H., Tsui, D. C., Choi, K. K.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 555 KB

english, 1992

35

Possible structural models of n-diamond: A modified form of diamond

Hirai, Hisako, Kondo, Ken-ichi, Sugiura, Hiroshi

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 583 KB

english, 1992

36

Electrical and magnetic transport properties of laser-deposited Ba1−xKxBiO3 thin films

Schweinfurth, R. A., Platt, C. E., Teepe, M. R., Van Harlingen, D. J.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 576 KB

english, 1992

37

New self-electro-optic effect device using two wavelengths in InGaAs/AlGaAs multiple quantum wells

Giugni, Stephen, Kawashima, Kenji, Fujiwara, Kenzo, Sano, Naokatsu

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 550 KB

english, 1992

38

Magnetically enhanced reaction sintering of textured YBa2Cu3Ox

Sarkar, Partho, Nicholson, Patrick S.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 608 KB

english, 1992

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