Volume 61; Issue 9

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Applied Physics Letters
Volume 61; Issue 9

Applied Physics Letters

Volume 61; Issue 9

1

Broadband (8–14 μm), normal incidence, pseudomorphic GexSi1-x/Si strained‐layer infrared photodetector operating between 20 and 77 K

People, R., Bean, J. C., Bethea, C. G., Sputz, S. K., Peticolas, L. J.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 713 KB

english, 1992

2

Local poling of ferroelectric polymers by scanning force microscopy

GuÌthner, P., Dransfeld, K.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 651 KB

english, 1992

3

Schottky barrier inhomogeneity caused by grain boundaries in epitaxial Al film formed on Si(111)

Miura, Y., Hirose, K., Aizawa, K., Ikarashi, N., Okabayashi, H.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 716 KB

english, 1992

4

Intersubband transitions in quantum well heterostructures with delta-doped barriers

Pandey, Lakshmi N., George, Thomas F.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 699 KB

english, 1992

5

New principle for optical filters

Magnusson, R., Wang, S. S.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 610 KB

english, 1992

6

Evidence for quantum well asymmetry in optical absorption

Young, P. M., Ehrenreich, H.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 672 KB

english, 1992

7

Inhibition of etching in oxygen-implanted AlGaAs

Reynolds, C. L., Lengle, S. E., Ahrens, R. E., Parker, S. M.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 548 KB

english, 1992

8

Nitrogen and oxygen incorporation during rapid thermal processing of Si in N2O

Kuiper, A. E. T., Pomp, H. G., Asveld, P. M., Bik, W. Arnold, Habraken, F. H. P. M.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 617 KB

english, 1992

9

Laser-driven boron diffusion into a Si epitaxial layer from a p+ boron-doped Si substrate

Kim, K. M., Mei, S. N., Saccamango, M. J., Chu, S. F., von Gutfeld, R. J., Vigliotti, D. R.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 620 KB

english, 1992

10

C60 photoluminescence spectra related to gas adsorption

Zhao, Tienan, Liu, Jinqing, Li, Yuliang, Zhu, Daoben

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 603 KB

english, 1992

11

Organometallic vapor phase epitaxy of CoGa on (100)GaAs

Maury, F., Talin, A. A., Kaesz, H. D., Williams, R. S.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 605 KB

english, 1992

12

Improving the performance of semiconductor ring lasers by controlled reflection feedback

Hohimer, J. P., Vawter, G. A., Craft, D. C., Hadley, G. R.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 643 KB

english, 1992

13

Ballistic electron emission microscopy of laterally patterned microstructures

Davies, A., Couillard, J. G., Craighead, H. G.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 615 KB

english, 1992

14

Scanning tunneling microscopy of GaAs multiple pn junctions

Gwo, S., Smith, A. R., Shih, C. K., Sadra, K., Streetman, B. G.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 724 KB

english, 1992

15

Growth of a delta-doped silicon layer by molecular beam epitaxy on a charge-coupled device for reflection-limited ultraviolet quantum efficiency

Hoenk, Michael E., Grunthaner, Paula J., Grunthaner, Frank J., Terhune, R. W., Fattahi, Masoud, Tseng, Hsin-Fu

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 702 KB

english, 1992

16

Charge transfer and low-temperature electron mobility in a strained Si layer in relaxed Si1−xGex

Stern, Frank, Laux, Steven E.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 591 KB

english, 1992

17

Theoretical analysis of dynamic response of asymmetric dual quantum well lasers

Ikeda, Sotomitsu, Shimizu, Akira

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 534 KB

english, 1992

18

Enhanced carrier densities and device performance in piezoelectric pseudomorphic high-electron mobility transistor structures

Sánchez-Dehesa, J., Sánchez-Rojas, J. L., Lopez, C., Nicholas, R. J.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 503 KB

english, 1992

19

Characteristics of high performance YBa2Cu3O7 step-edge junctions

Luine, J., Bulman, J., Burch, J., Daly, K., Lee, A., Pettiette-Hall, C., Schwarzbek, S., Miller, D.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 623 KB

english, 1992

20

Dependence of lifetime on surface concentration of copper and iron in silicon wafers

Zhong, L., Shimura, F.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 545 KB

english, 1992

21

Observation of the focusing of x-ray transition radiation using cylindrical optics

Piestrup, M. A., Boyers, D. G., Pincus, C. I., Li, Qiang, Ho, A. H., Maruyama, X. K., Snyder, D. D., Skopik, D. M., Silzer, R. M., Moran, M. J., Rothbart, G. B.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 499 KB

english, 1992

22

Role of hydrogen in the growth of Y1Ba2Cu3O7 on MgO substrates by off-axis magnetron sputtering

Cukauskas, Edward J., Allen, Laura H., Sherrill, Gregory K., Holm, R. T.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 572 KB

english, 1992

23

Growth of face-centered-cubic single crystals of C60 from boiling benzene

Yosida, Yositaka, Arai, Takeshi, Suematsu, Hiroyoshi

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 399 KB

english, 1992

24

Improved performance of carbon-doped GaAs base heterojunction bipolar transistors through the use of InGaP

Abernathy, C. R., Ren, F., Wisk, P. W., Pearton, S. J., Esagui, R.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 580 KB

english, 1992

25

Silver on diamond Schottky diodes formed on boron doped hot-filament chemical vapor deposited polycrystalline diamond films

Zhao, G., Stacy, T., Charlson, E. J., Charlson, E. M., Chao, C. H., Hajsaid, M., Meese, J., Popovici, G., Prelas, M.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 532 KB

english, 1992

26

Interdiffusion problems at CdTe/InSb heterointerfaces grown by temperature gradient vapor transport deposition

Kim, T. W., Jung, M., Park, H. L., Na, H. K., Kim, J. S.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 499 KB

english, 1992

27

Visible photoluminescence of Zn-doped CuAlS2

Aksenov, Igor, Sato, Katsuaki

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 457 KB

english, 1992

28

pnp resonant tunneling light emitting transistor

Genoe, J., Van Hoof, C., Fobelets, K., Mertens, R., Borghs, G.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 582 KB

english, 1992

29

a-axis oriented growth of YBa2Cu3O7−y films on LaSrGaO4(100) substrates

Hontsu, S., Mukai, N., Ishii, J., Kawai, T., Kawai, S.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 544 KB

english, 1992

30

Twofold efficiency improvement in high performance AlGaInP light-emitting diodes in the 555–620 nm spectral region using a thick GaP window layer

Huang, K. H., Yu, J. G., Kuo, C. P., Fletcher, R. M., Osentowski, T. D., Stinson, L. J., Craford, M. G., Liao, A. S. H.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 626 KB

english, 1992

31

Continuous coherent microwave oscillation in InSb p-n junctions

Kamakura, Katsutoshi

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 435 KB

english, 1992

32

Low residual impurities assessment by photoluminescence in multistep wafer-annealed semi-insulating Czochralski-grown GaAs

Ka, O., Oda, O., Makita, Y., Yamada, A.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 602 KB

english, 1992

33

Structure of GaAs=GaSb incoherent interface after epitaxial growth

Bourret, A., Fuoss, P. H.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 647 KB

english, 1992

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