Volume 62; Issue 14

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Applied Physics Letters
Volume 62; Issue 14

Applied Physics Letters

Volume 62; Issue 14

1

Influence of ion-implanted titanium on the performance of edge-defined, film-fed grown silicon solar cells

Borenstein, J. T., Hanoka, J. I., Bathey, B. R., Kalejs, J. P., Milâshtein, S.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 555 KB

english, 1993

2

Amphoteric behavior of germanium in In0.5Ga0.5P grown by liquid phase epitaxy

Lee, Jong Boong, Kim, In, Kwon, Ho Ki, Choe, Byung-Doo

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 572 KB

english, 1993

3

Unipolar avalanche multiplication phenomenon in multiquantum well structures

Toivonen, M., Jalonen, M., Salokatve, A., Pessa, M.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 603 KB

english, 1993

4

Study on the photoconductivity characteristics of porous Si

Yeh, C. C., Hsu, Klaus Y. J., Samanta, L. K., Chen, P. C., Hwang, H. L.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 494 KB

english, 1993

5

High-resolution transmission electron microscopy of vicinal AlAs/GaAs interfacial structure

Ikarashi, Nobuyuki, Baba, Toshio, Ishida, Koichi

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 793 KB

english, 1993

6

Millimeter-wave monolithic barrier n-n+ diode grid frequency doubler

Qin, Xiaohui, Domier, C., Luhmann, N. C., Liu, H-X L., Chung, E., Sjogren, L., Wu, Wenhsing

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 601 KB

english, 1993

7

Fabrication of Josephson junctions using heteroepitaxial Bi2(Sr,Ca)3Cu2Ox/Bi2Sr2CuOy/Bi2(Sr,Ca)3Cu2Ox trilayer films

Satoh, T., Fujita, J., Yoshitake, T., Tsuge, H.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 573 KB

english, 1993

8

Epitaxial growth of single-crystal Ca1−xSrxCuO2 thin films by pulsed-laser deposition

Norton, D. P., Chakoumakos, B. C., Budai, J. D., Lowndes, D. H.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 575 KB

english, 1993

9

Influence of dose rate and temperature on the accumulation of Si-implantation damage in indium phosphide

Akano, U. G., Mitchell, I. V., Shepherd, F. R.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 646 KB

english, 1993

10

Strain-compensated InGaAs/GaAsP/GaInAsP/GaInP quantum well lasers (λ∼0.98 μm) grown by gas-source molecular beam epitaxy

Zhang, G., Ovtchinnikov, A.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 581 KB

english, 1993

11

Photoluminescence of plasma polymerized methyl methacrylate films

Li, Guifang, Tobin, Jeffrey A., Denton, Denice D.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 638 KB

english, 1993

12

Detection of 11BF and 10BF by resonance-enhanced multiphoton ionization spectroscopy

Irikura, Karl K., Johnson, Russell D., Hudgens, Jeffrey W.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 478 KB

english, 1993

13

X-ray photoelectron spectroscopic studies of the chemical nature of as-prepared and NaOH-treated porous silicon layer

Murakoshi, Kei, Uosaki, K.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 646 KB

english, 1993

14

Solubility of hydrogen in silicon at 1300 °C

McQuaid, S. A., Binns, M. J., Newman, R. C., Lightowlers, E. C., Clegg, J. B.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 587 KB

english, 1993

15

Controlled passivation of GaAs by Se treatment

Scimeca, T., Watanabe, Y., Maeda, F., Berrigan, R., Oshima, M.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 550 KB

english, 1993

16

Observation of solid phase epitaxy processes of Ar ion bombarded Si(001) surfaces by scanning tunneling microscopy

Uesugi, Katsuhiro, Yao, Takafumi, Sato, Tomoshige, Sueyoshi, Takashi, Iwatsuki, Masashi

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 942 KB

english, 1993

17

Growth and saturation of stimulated beam modulation in a two-stream relativistic klystron amplifier

Chen, C., Catravas, P., Bekefi, G.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 644 KB

english, 1993

18

CuInSe2 homojunction diode fabricated by phosphorus doping

Kohiki, Shigemi, Nishitani, Mikihiko, Negami, Takayuki, Wada, Takahiro

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 452 KB

english, 1993

19

Metalorganic chemical vapor deposition of double-sided YBa2Cu3O7 thin films

DeSisto, W. J., Newman, H. S., Henry, R. L., Cestone, V. C.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 544 KB

english, 1993

20

Existence of extinction temperature in WSix film growth from WF6 and SiH4: An indication of the role played by radical chain reactions

Saito, T., Shimogaki, Y., Egashira, Y., Komiyama, H., Yuyama, Y., Sugawara, K., Nagata, S., Takahiro, K., Yamaguchi, S.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 572 KB

english, 1993

21

Formation of P precipitates during annealing of InP grown by gas source molecular beam epitaxy at low temperature

Claverie, A., Crestou, J., Garcia, J. C.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 638 KB

english, 1993

22

Investigation of ballistic elastic scattering length and specularity in multiterminal GaAs/AlGaAs by magnetic electron focusing effect

Tsukagoshi, K., Takaoka, S., Murase, K., Gamo, K., Namba, S.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 525 KB

english, 1993

23

X-ray diffraction reciprocal space mapping of a GaAs surface grating

Gailhanou, M., Baumbach, T., Marti, U., Silva, P. C., Reinhart, F. K., Ilegems, M.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 553 KB

english, 1993

24

Time-dependent Hall effect analysis method used for investigation of the DX center in AlGaAs:Si

Brunthaler, G., Stöger, G., Aumayr, A., Köhler, K.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 593 KB

english, 1993

25

Nanometer scale patterning of a monolayer Langmuir–Blodgett film with a scanning tunneling microscope in air

Day, H. C., Allee, D. R., George, R., Burrows, V. A.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 603 KB

english, 1993

26

Monte Carlo hydrodynamic simulation of neutral radical transport in low pressure remote plasma activated chemical vapor deposition

Hartig, Michael J., Kushner, Mark J.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 605 KB

english, 1993

27

Competitive kinetic processes during homoepitaxial growth on Ge(111)

Yokotsuka, T., Wilby, M. R., Vvedensky, D. D., Kawamura, T., Fukutani, K., Ino, S.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 626 KB

english, 1993

28

Diffraction grating pitch modulation using lead lanthanum zirconate titanate

Bryan-Brown, G. P., Sambles, J. R., Welford, K. R.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 491 KB

english, 1993

29

Nuclear reaction analysis profiling as direct evidence for lithium ion mass transport in thin film ‘‘rocking-chair’’ structures

Goldner, R. B., Haas, T. E., Arntz, F. O., Slaven, S., Wong, K. K., Wilkens, B., Shepard, C., Lanford, W.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 543 KB

english, 1993

30

Enhancement of diffusion-induced grain boundary migration by ion irradiation

Alexander, Dale E., Rehn, L. E., Baldo, P. M., Gao, Y.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 605 KB

english, 1993

31

Aligned and twinned growth of α-Fe thin films on atomically cleaned (111)Si at room temperature

Wang, M. H., Chen, L. J.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 746 KB

english, 1993

32

Ellipsometric study of Si0.5Ge0.5/Si strained-layer superlattices

Sieg, R. M., Alterovitz, S. A., Croke, E. T., Harrell, M. J.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 586 KB

english, 1993

33

Growth of high quality gallium arsenide on HF-etched silicon (001) by chemical beam epitaxy

Xing, Y. R., Jamal, Z., Joyce, T. B., Bullough, T. J., Kiely, C. J., Goodhew, P. J.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 528 KB

english, 1993

34

Modeling the current-voltage characteristics of silver-sheathed Bi-Sr-Ca-Cu-O tapes

Gurevich, A., Pashitski, A. E., Edelman, H. S., Larbalestier, D. C.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 646 KB

english, 1993

35

Low resistance wavelength-reproducible p-type (Al,Ga)As distributed Bragg reflectors grown by molecular beam epitaxy

Chalmers, S. A., Lear, K. L., Killeen, K. P.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 589 KB

english, 1993

36

Hydrogen interactions with delocalized spin centers in buried SiO2 thin films

Warren, W. L., Schwank, J. R., Shaneyfelt, M. R., Fleetwood, D. M., Winokur, P. S.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 679 KB

english, 1993

37

Perfectly selective Si epitaxial growth due to synchrotron radiation irradiation during disilane molecular beam epitaxy

Utsumi, Yuichi, Akazawa, Housei, Nagase, Masao, Urisu, Tsuneo, Kawashima, Izumi

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 622 KB

english, 1993

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