Volume 62; Issue 21

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Applied Physics Letters
Volume 62; Issue 21

Applied Physics Letters

Volume 62; Issue 21

1

Microstructural analysis of nickel silicide formed by nickel/silicon‐on‐oxide annealing

Yang, H., Pinizzotto, R. F., Luo, L., Namavar, F.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 731 KB

english, 1993

2

Effects of heat treatment on sharp-line photoluminescence of GaAs grown by low-temperature molecular beam epitaxy

Yu, P. W., Talwar, Devki N., Stutz, C. E.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 677 KB

english, 1993

3

In situ detection of relaxation in InGaAs/GaAs strained layer superlattices using laser light scattering

Celii, F. G., Beam, E. A., Files-Sesler, L. A., Liu, H.-Y., Kao, Y. C.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 739 KB

english, 1993

4

Direct observation of the tip shape in scanning probe microscopy

Montelius, L., Tegenfeldt, J. O.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 654 KB

english, 1993

5

Light-emitting porous silicon diode with an increased electroluminescence quantum efficiency

Steiner, P., Kozlowski, F., Lang, W.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 643 KB

english, 1993

6

Compensation of shallow silicon donors by deep copper acceptors in gallium arsenide

Roush, Randy A., Stoudt, David C., Mazzola, Michael S.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 584 KB

english, 1993

7

Surface-breaking fatigue crack detection using laser ultrasound

Shan, Q., Dewhurst, R. J.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 611 KB

english, 1993

8

Luminescence efficiency of near-surface quantum wells before and after ion-gun hydrogenation

Chang, Ying-Lan, Tan, I-Hsing, Zhang, Yong-Hang, Merz, James, Hu, Evelyn, Frova, A., Emiliani, V.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 639 KB

english, 1993

9

Observation of quantum confinement effects in strained Si0.84Ge0.16/Si quantum wells at room temperature

Chen, Y. F., Dai, Y. T., Chou, H. P., Chang, D. C., Chang, C. Y., Wang, P. J.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 481 KB

english, 1993

10

CsB3O5: A new nonlinear optical crystal

Wu, Yicheng, Sasaki, Takatomo, Nakai, Sadao, Yokotani, Atsushi, Tang, Honggao, Chen, Chuangtian

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 405 KB

english, 1993

11

Photoluminescence study of radiative recombination in porous silicon

Wang, C., Perz, J. M., Gaspari, F., Plumb, M., Zukotynski, S.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 572 KB

english, 1993

12

Electron transport properties of a strained Si layer on a relaxed Si1−xGex substrate by Monte Carlo simulation

Miyata, H., Yamada, Toshishige, Ferry, D. K.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 627 KB

english, 1993

13

Direct measurement of near-band-gap electrorefraction in Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As thin-film structures

Calhoun, K. H., Jokerst, N. M.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 577 KB

english, 1993

14

W(Zn) selectively deposited and locally diffused ohmic contacts to p-InGaAs/InP formed by rapid thermal low pressure metalorganic chemical vapor deposition

Katz, A., El-Roy, A., Feingold, A., Geva, M., Moriya, N., Pearton, S. J., Lane, E., Keel, T., Abernathy, C. R.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 648 KB

english, 1993

15

GaAs single-domain growth on exact (100) Si substrate

Sprung, K.-R., Wilke, K., Heymann, G., Varrio, J., Pessa, M.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 605 KB

english, 1993

16

Electron energy distribution function measurements in a planar inductive oxygen radio frequency glow discharge

Barnes, Michael S., Forster, John C., Keller, John H.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 570 KB

english, 1993

17

Photoabsorption in n-type Si-SiGe quantum-well infrared photodetectors

Shadrin, V. D., Coon, V. T., Serzhenko, F. L.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 603 KB

english, 1993

18

Band-gap discontinuity control for InGaAs/InGaAsP multiquantum-well structures by tensile-strained barriers

Nido, Masaaki, Naniwae, Koh-ichi, Terakado, Tomoji, Suzuki, Akira

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 651 KB

english, 1993

19

Microstructure of porous silicon

Nakajima, A., Ohshima, Y., Itakura, T., Goto, Y.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 631 KB

english, 1993

20

Detailed analysis of the in situ magneto-optic Kerr signal of gadolinium films near the Curie temperature

Farle, M., Lewis, W. A., Baberschke, K.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 649 KB

english, 1993

21

Observation of period doubling, period tripling, and period quadrupling in a directly modulated 1.55 μm InGaAsP distributed feedback laser diode

Ngai, Wan Fung, Liu, Hai-Feng

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 625 KB

english, 1993

22

Er3+ doping of CaF2 layers grown by molecular beam epitaxy

Daran, E., Bausa, L. E., Muñoz-Yagüe, A., Fontaine, C.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 558 KB

english, 1993

23

Broadband second-harmonic generation in SrxBa1−xNb2O6 by spread spectrum phase matching with controllable domain gratings

Horowitz, Moshe, Bekker, Alexander, Fischer, Baruch

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 724 KB

english, 1993

24

New dielectric material for low temperature thermometry in high magnetic fields

Maior, M. M., Molnar, S. B., Vysochanskii, Yu. M., Gurzan, M. I., van Loosdrecht, P. H. M., van der Linden, P. J. E. M., van Kempen, H.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 520 KB

english, 1993

25

Controlling of Schottky barrier heights for Au/n-GaAs and Ti/n-GaAs with hydrogen introduced after metal deposition by bias annealing

Jin, S. X., Wang, H. P., Yuan, M. H., Song, H. Z., Wang, H., Mao, W. L., Qin, G. G., Ren, Ze-Ying, Li, Bing-Chen, Hu, Xiong-Wei, Sun, Guo-Sheng

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 605 KB

english, 1993

26

Simple, extremely low resistance contact system to n-InP that does not exhibit metal-semiconductor intermixing during sintering

Weizer, Victor G., Fatemi, Navid S.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 603 KB

english, 1993

27

Stresses and morphological instabilities in silicide/polycrystalline Si layered structures

Hong, Q. Z., d’Heurle, F. M., Harper, J. M. E., Hong, Stella Q.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 605 KB

english, 1993

28

Deformation induced deep levels in p-CdTe

Hümmelgen, I. A., Schröter, W.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 444 KB

english, 1993

29

Stability of visible luminescence from porous silicon

Batstone, J. L., Tischler, M. A., Collins, R. T.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 577 KB

english, 1993

30

Polarity inversion of CdTe(111) orientation grown on Bi (00.1) by molecular beam epitaxy

DiVenere, A., Yi, X. J., Hou, C. L., Wang, H. C., Ketterson, J. B., Wong, G. K., Sou, I. K.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 663 KB

english, 1993

31

High power blue light generation by frequency doubling of a laser diode in a periodically domain-inverted LiTaO3 waveguide

Yamamoto, Kazuhisa, Mizuuchi, Kiminori, Kitaoka, Yasuo, Kato, Makoto

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 479 KB

english, 1993

32

Selective area oxidation of silicon with a scanning force microscope

Day, H. C., Allee, D. R.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 511 KB

english, 1993

33

Interface defects of ultrathin rapid-thermal oxide on silicon

Stathis, J. H., Buchanan, D. A., Quinlan, D. L., Parsons, A. H., Kotecki, D. E.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 532 KB

english, 1993

34

Multilayer structure for epitaxial growth of oxide films on Si with an underlying electrode

Hung, L. S., Bosworth, L. A.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 603 KB

english, 1993

35

In situ Cr gettering in polycrystalline silicon sheets obtained by edge-defined film-fed growth

Pivac, B., Borghesi, A., Sassella, A., Kalejs, J., Bathey, B. R.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 500 KB

english, 1993

36

Carrier-modulated, microwave-detected Shubnikov–de Haas oscillations in two-dimensional systems

Linke, H., Kowalski, B., Ramvall, P., Emanuelsson, P., Omling, P., Oettinger, K., Drechsler, M., Meyer, B. K.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 570 KB

english, 1993

37

Crystalline linkage and defect structures in bulk zone melt textured YBa2Cu3O7 observed by transmission electron microscopy

Zanota, A., Kvam, E. P., Balkin, D., McGinn, P. J.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 677 KB

english, 1993

38

Heteroepitaxial growth of InP/In0.52Ga0.48As structures on GaAs (100) by gas-source molecular beam epitaxy

Chin, T. P., Tu, C. W.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 663 KB

english, 1993

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