Volume 63; Issue 6

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Applied Physics Letters
Volume 63; Issue 6

Applied Physics Letters

Volume 63; Issue 6

1

Radiation trapping forces on microspheres with optical tweezers

Wright, W. H., Sonek, G. J., Berns, M. W.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 631 KB

english, 1993

2

Systematics of electron mobility in Si/SiGe heterostructures

Nelson, S. F., Ismail, K., Jackson, T. N., Nocera, J. J., Chu, J. O., Meyerson, B. S.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 616 KB

english, 1993

3

In surface segregation and growth-mode transition during InGaAs growth by molecular-beam epitaxy

Toyoshima, H., Niwa, T., Yamazaki, J., Okamoto, A.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 622 KB

english, 1993

4

Photoinduced current transient spectroscopy of boron doped diamond

Glesener, J. W.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 601 KB

english, 1993

5

Low-temperature migration enhanced epitaxy of base material for AlGaAs/GaAs heterojunction bipolar transistors

Zhang, Kai, Wu, Der-Woei, Fu, Jianming, Miller, D. L., Fukuda, Mike, Yun, Yong-Hoon, Schauer, Stephen

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 572 KB

english, 1993

6

Electrically induced light emission and novel photocurrent response of a porous silicon device

Shi, Hongtao, Zheng, Youdou, Wang, Yongbin, Yuan, Renkuan

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 458 KB

english, 1993

7

Normal incidence infrared modulator using direct–indirect transitions in GaSb quantum wells

Xie, H., Wang, W. I.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 521 KB

english, 1993

8

Observation of boron-related photoluminescence in GaAs layers grown by molecular beam epitaxy

Brierley, Steven K., Hendriks, Henry T., Hoke, William E., Lemonias, Peter J., Weir, David G.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 583 KB

english, 1993

9

Piezoelectric-induced current asymmetry in [111] InGaAs/InAlAs resonant tunneling diodes for microwave mixing

Hernández, J. M., Izpura, I., Calleja, E., Muñoz, E.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 570 KB

english, 1993

10

Controlled misfit dislocation nucleation in Si0.90Ge0.10 epitaxial layers grown on Si

Watson, G. Patrick, Fitzgerald, Eugene A., Xie, Ya-Hong, Silverman, Paul J., White, Alice E., Short, Kenneth T.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 716 KB

english, 1993

11

Spectral behavior of solar cells based on the ‘‘junction near local defect layer’’ design

Summonte, C., Biavati, M., Gabilli, E., Galloni, R., Guerri, S., Rizzoli, R., Zignani, F.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 699 KB

english, 1993

12

Space-charge effects in photovoltaic double barrier quantum well infrared detectors

Schneider, H., Larkins, E. C., Ralston, J. D., Schwarz, K., Fuchs, F., Koidl, P.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 673 KB

english, 1993

13

Optimization of the growth parameters for the molecular-beam epitaxial growth of strained In0.16Ga0.84As/Al0.33Ga0.67As single quantum-well structures

Emeny, M. T., Skolnick, M. S., Whitehouse, C. R., Hayes, D. G., Calcott, P. D. J., Higgs, A. W.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 641 KB

english, 1993

14

Vacancy controlled interdiffusion of the group V sublattice in strained InGaAs/InGaAsP quantum wells

Gillin, W. P., Rao, S. S., Bradley, I. V., Homewood, K. P., Smith, A. D., Briggs, A. T. R.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 587 KB

english, 1993

15

Ultrashort pulse reshaping using a semiconductor laser amplifier in a ring cavity

Langlois, Patrick, Piché, Michel

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 592 KB

english, 1993

16

Gain-guided laser diode having a curved-mirror-cavity with a low astigmatism

Toda, A., Kobayashi, T., Dohsen, M., Mori, Y.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 551 KB

english, 1993

17

Fabrication of silicon nanostructures with a scanning tunneling microscope

Snow, E. S., Campbell, P. M., McMarr, P. J.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 754 KB

english, 1993

18

Ion beam mixing for enhanced electron tunneling in metal-oxide-silicon structures

Walker, A. J., Politiek, J.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 570 KB

english, 1993

19

Vertical and lateral hole aluminum filling characteristics employing electron cyclotron resonance plasma sputtering with high magnetic field

Shingubara, S., Morimoto, N., Takehiro, S., Matsui, Y., Utsunomiya, I., Horiike, Y., Shindo, H.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 689 KB

english, 1993

20

Theoretical gain of strained quantum well grown on an InGaAs ternary substrate

Ishikawa, Hiroshi

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 575 KB

english, 1993

21

Effect of crystallographic orientation on ferroelectric properties of PbZr0.2Ti0.8O3 thin films

Ramesh, R., Sands, T., Keramidas, V. G.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 694 KB

english, 1993

22

Sequential-ion-implantation synthesis of ternary metal silicides

Tan, Zhengquan, Namavar, F., Heald, S. M., Budnick, J. I.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 662 KB

english, 1993

23

Direct molecular-beam epitaxial growth of ZnTe(100) and CdZnTe(100)/ZnTe(100) on Si(100) substrates

de Lyon, T. J., Roth, J. A., Wu, O. K., Johnson, S. M., Cockrum, C. A.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 693 KB

english, 1993

24

1.3 μm electroabsorption reflection modulators on GaAs

Lord, S. M., Trezza, J. A., Larson, M. C., Pezeshki, B., Harris, J. S.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 648 KB

english, 1993

25

Low-energy oxygen ion bombardment effect on BaTiO3 thin films grown by multi-ion-beam reactive sputtering technique

Peng, C.-J., Hu, H., Krupanidhi, S. B.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 629 KB

english, 1993

26

Determination of the density of states at the Fermi level of hydrogenated amorphous silicon in thin-film transistor structure by space charge limited current measurement

Soh, Hoe Sup, Lee, Choochon, Jang, Jin, Jung, Moon Youn, Yoo, Soon Sung

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 496 KB

english, 1993

27

Epitaxial τMnAl/NiAl magnetic multilayers on AlAs/GaAs

Tanaka, M., Harbison, J. P., Sands, T., Cheeks, T. L., De Boeck, J., Hwang, D. M., Florez, L. T., Keramidas, V. G.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 667 KB

english, 1993

28

Improvements of microstructural and superconducting properties of Ag-Bi2Sr2CaCu2Ox screen-printed tape by controlled oxygen partial pressure during cooling procedure

Noji, H., Zhou, W., Glowacki, B. A., Oota, A.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 627 KB

english, 1993

29

Planar double gate quantum wire transistor

Chou, S. Y., Wang, Y.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 587 KB

english, 1993

30

Effect of an eigenstrain on slow viscous flow of compressible fluid films

Murray, Paul E.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 463 KB

english, 1993

31

Secondary-neutral microprobe with electron-gas post-ionization

Bieck, W., Gnaser, H., Oechsner, H.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 623 KB

english, 1993

32

Properties of superconductive bandpass filters with thermal switches

Nagai, Y., Hebert, D. F., Van Duzer, T., Michikami, O.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 477 KB

english, 1993

33

New continuous wave infrared Ar-Xe laser at intermediate gas pressures pumped by a transverse radio frequency discharge

Udalov, Y. B., Peters, P. J. M., Heeman-Ilieva, M. B., Ernst, F. H. J., Ochkin, V. N., Witteman, W. J.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 444 KB

english, 1993

34

Dislocation networks in Bi2Sr2CaCu2Oy single crystals

Shang, P., Yang, G., Jones, I. P., Gough, C. E., Abell, J. S.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 606 KB

english, 1993

35

Tailoring of internal fields in InGaAs/GaAs multiwell structures grown on (111)B GaAs

Pabla, A. S., Sanchez-Rojas, J. L., Woodhead, J., Grey, R., David, J. P. R., Rees, G. J., Hill, G., Pate, M. A., Robson, P. N., Hogg, R. A., Fisher, T. A., Willcox, A. R. K., Whittaker, D. M., Skolnic

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 497 KB

english, 1993

36

Segregation of Si δ doping in GaAs-AlGaAs quantum wells and the cause of the asymmetry in the current-voltage characteristics of intersubband infrared detectors

Liu, H. C., Wasilewski, Z. R., Buchanan, M., Chu, Hanyou

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 646 KB

english, 1993

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