Volume 63; Issue 8

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Applied Physics Letters
Volume 63; Issue 8

Applied Physics Letters

Volume 63; Issue 8

1

Effect of back contact impedance on frequency dependence of capacitance‐voltage measurements on metal/diamond diodes

Venkatesan, V., Das, K., von Windheim, J. A., Geis, M. W.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 637 KB

english, 1993

2

Fabrication of high aspect ratio silicon pillars of ≪10 nm diameter

Chen, Wei, Ahmed, Haroon

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 667 KB

english, 1993

3

Thermal stability of the unstable fcc-Fe50Cu50 phase prepared by mechanical alloying

Jiang, J. Z., Gonser, U., Gente, C., Bormann, R.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 593 KB

english, 1993

4

Epitaxial MgO on GaAs(111) as a buffer layer for z-cut epitaxial lithium niobate

Fork, D. K., Anderson, G. B.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 642 KB

english, 1993

5

Crossed fluxes technique for pulsed laser deposition of smooth YBa2Cu3O7−x films and multilayers

M. D. Strikovsky, E. B. Klyuenkov, S. V. Gaponov, J. Schubert, C. A. Copetti

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 627 KB

english, 1993

6

Normal incidence infrared photodetectors using intersubband transitions in GaSb L-valley quantum wells

Zhang, Y., Baruch, N., Wang, W. I.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 531 KB

english, 1993

7

Shallow angle lapping of III-V semiconductor thin layer structures by an ion beam/chemical etching technique

Eckart, D. W., Casas, L. M.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 661 KB

english, 1993

8

Electrical and optical properties of PbTiO3 thin films on p-Si grown by metalorganic chemical vapor deposition at low temperature

Yoon, Y. S., Kang, W. N., Yom, S. S., Kim, T. W., Jung, M., Kim, H. J., Park, T. H., Na, H. K.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 566 KB

english, 1993

9

In situ fabrication of InP-based optical waveguides by excimer laser projection

Matz, R., Heydel, R., Göpel, W.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 664 KB

english, 1993

10

Scanning tunneling microscopy investigations of the Si(111) topography produced by etching in 40% NH4F: Observation of an optimum etch duration

Hsiao, Gregor S., Virtanen, Jorma A., Penner, Reginald M.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 715 KB

english, 1993

11

Low-temperature synthesis of BaTiO3 thin films on silicon substrates by hydrothermal reaction

Bacsa, R. R., Dougherty, J. P., Pilione, L. J.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 643 KB

english, 1993

12

Influence of hot phonons on electronic noise in GaAs

Bordone, Paolo, Varani, Luca, Reggiani, Lino, Rota, Lucio, Kuhn, Tilmann

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 602 KB

english, 1993

13

Disordering and compensation in Si-doped AlGaAs/GaAs superlattices using Ga- and As-rich annealing ambients

Olmsted, B. L., Houde-Walter, S. N.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 674 KB

english, 1993

14

Gas-source molecular beam epitaxy growth of GaxIn1−xAsyP1−y lattice matched to GaAs

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 570 KB

english, 1993

15

Er luminescence centers in GaAs grown by migration-enhanced epitaxy

Taguchi, Akihito, Kawashima, Minoru, Takahei, Kenichiro, Horikoshi, Yoshiji

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 610 KB

english, 1993

16

Real-time in situ detection of SF6 in a plasma reactor

Sun, H. C., Whittaker, E. A.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 588 KB

english, 1993

17

Electrically active, ion implanted boron at the solubility limit in silicon

Liefting, J. R., Schreutelkamp, R. J., Vanhellemont, J., Vandervorst, W., Maex, K., Custer, J. S., Saris, F. W.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 625 KB

english, 1993

18

High-resolution line-Q measurements of velocity-selective nonlinear Faraday rotation in Rb vapor

Lee, W. D., Heuring, J. J., Campbell, J. C., Buell, W. F., Davis, C. L.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 668 KB

english, 1993

19

Large observed exciton shifts with electric field in InGaAs/InGaAsP stepped quantum wells

Tütken, T., Hawdon, B. J., Zimmermann, M., Hangleiter, A., Härle, V., Scholz, F.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 497 KB

english, 1993

20

Prebreakdown conduction in zinc oxide varistors: Thermionic or tunnel currents and one-step or two-step conduction processes

Castro, M. S., Aldao, C. M.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 576 KB

english, 1993

21

Reversible changes in doping of InGaAlN alloys induced by ion implantation or hydrogenation

Pearton, S. J., Abernathy, C. R., Wisk, P. W., Hobson, W. S., Ren, F.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 671 KB

english, 1993

22

Thermal stability of strained InxGa1−xAs/InyAl1−yAs/InP heterostructures

Bennett, Brian R., del Alamo, Jesús A.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 590 KB

english, 1993

23

Sb/GaSb heterostructures and multilayers

Golding, T. D., Dura, J. A., Wang, W. C., Vigliante, A., Moss, S. C., Chen, H. C., Miller, J. H., Hoffman, C. A., Meyer, J. R.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 599 KB

english, 1993

24

Light detection sensitivity of a vertical cavity structure used in an optical switch device

Yamanaka, Yutaka, Numai, Takahiro, Kasahara, Kenichi, Kuboto, Keiichi

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 460 KB

english, 1993

25

Optimization of YBa2Cu3O7−δ submicrometer structure fabrication

Barth, Roland, Spangenberg, Bernd, Jaekel, Christian, Roskos, Hartmut G., Kurz, Heinrich, Holzapfel, Bernhard

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 615 KB

english, 1993

26

Noise reduction in low-frequency SQUID measurements with laser-driven switching

Cunningham, Charles E., Park, George S., Cabrera, Blas, Huber, Martin E.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 586 KB

english, 1993

27

Measurement of residual stress in MgO thin films on GaAs by electron microscopy

De Graef, Marc, Clarke, David R.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 589 KB

english, 1993

28

Improvement of InP/InGaAs heterointerfaces grown by gas source molecular beam epitaxy

Anan, Takayoshi, Sugou, Shigeo, Nishi, Kenichi, Ichihashi, Toshinari

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 613 KB

english, 1993

29

Special narrowing of ultrashort laser pulses by self-phase modulation in optical fibers

Oberthaler, M., Höpfel, R. A.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 503 KB

english, 1993

30

45-cm long compression-molded polymer-based optical bus

Chen, Ray T., Tang, Suning, Jannson, Tomasz, Jannson, Joanna

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 633 KB

english, 1993

31

Space- and time-resolved investigation of short wavelength x-ray laser in Li-like Ca ions

Xu, Zhizhan, Fan, Pinzhong, Lin, Lihuang, Li, Yaolin, Wang, Xiaofang, Lu, Peixiang, Li, Ruxin, Han, Shensheng, Sun, Lan, Qian, Aidi, Shen, Baifei, Jiang, Zhiming, Zhang, Zhengquan, Zhou, Jinzhi

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 518 KB

english, 1993

32

Ballistic-electron-emission microscopy of (100)CoGa/n-type GaAs interfaces grown by molecular beam epitaxy

Tsau, Liming, Kuo, T. C., Wang, K. L.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 626 KB

english, 1993

33

Ion channeling effect on lattice relaxation in strained In1−xGaxAs/InP multiple-quantum-well structure

Takahashi, Yukimi, Kuriyama, K., Matsui, Y., Kamijoh, T.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 546 KB

english, 1993

34

Low-temperature deposition of ferroelectric Bi4Ti3O12 films by the reactive ionized cluster beam method

Kaneko, Norio, Yamamoto, Keisuke, Tsukamoto, Takeo

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 535 KB

english, 1993

35

Quantum wires prepared by molecular beam epitaxy regrowth on patterned AlGaAs buffer layers

Eberl, K., Grambow, P., Lehmann, A., Kurtenbach, A., Klitzing, K. v., Heitmann, D., Dilger, M., Hohenstein, M.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 615 KB

english, 1993

36

Carbon + argon co-implantation for GaAs p-channel metal-semiconductor field-effect transistors

Chan, Yi-Jen, Chen, Chun-Hung

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 479 KB

english, 1993

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