Volume 65; Issue 20

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Applied Physics Letters
Volume 65; Issue 20

Applied Physics Letters

Volume 65; Issue 20

1

Sol‐gel method for synthesizing visible photoluminescent nanosized Ge‐crystal‐doped silica glasses

Nogami, Masayuki, Abe, Yoshihiro

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 418 KB

english, 1994

2

Nonguiding half‐wave semiconductor microcavities displaying the exciton‐photon mode splitting

Abram, I., Iung, S., Kuszelewicz, R., Le Roux, G., Licoppe, C., Oudar, J. L., Rao, E. V. K., Bloch, J. I., Planel, R., Thierry‐Mieg, V.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 377 KB

english, 1994

3

Theoretical performance of very long wavelength InAs/InxGa1âxSb superlattice based infrared detectors

Grein, C. H., Cruz, H., FlatteÌ, M. E., Ehrenreich, H.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 376 KB

english, 1994

4

Current injection GaAs/AlGaAs quantum wire lasers fabricated by cleaved edge overgrowth

Wegscheider, Werner, Pfeiffer, Loren, West, Kenneth, Leibenguth, Ronald E.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 431 KB

english, 1994

5

Silicon wafer bonding studied by infrared absorption spectroscopy

D. Feijoó, Y. J. Chabal, S. B. Christman

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 259 KB

english, 1994

6

Temporal magnification and reversal of 100 Gb/s optical data with an up-conversion time microscope

Bennett, C. V., Scott, R. P., Kolner, B. H.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 324 KB

english, 1994

7

Photoactivated birefringence in antiferroelectric thin films via a structural transition

Wang, Feiling, Li, Kewen K., Haertling, Gene H.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 306 KB

english, 1994

8

Interface roughening in surfactant deposition

Hasegawa, Shigehiko, Ryland, Robert G., Williams, Ellen D.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 789 KB

english, 1994

9

Direct observation of potential distribution across Si/Si p-n junctions using off-axis electron holography

McCartney, M. R., Smith, David J., Hull, Robert, Bean, J. C., Voelkl, E., Frost, B.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 526 KB

english, 1994

10

Determination of heterojunction band discontinuities in strained AlxIn1−xP/lnP systems

Lammasniemi, J., Tappura, K., Smekalin, K.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 307 KB

english, 1994

11

Characterization of metal–oxide–semiconductor capacitors, fabricated on (111) β-SiC epilayers grown on (111) TiC

Chen, H-S., Parsons, J. D.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 427 KB

english, 1994

12

Heteroepitaxial growth of ZnO films on diamond (111) plane by magnetron sputtering

Hachigo, Akihiro, Nakahata, Hideaki, Higaki, Kenjiro, Fujii, Satoshi, Shikata, Shin-ichi

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 373 KB

english, 1994

13

Simple technique for picosecond electrical pulse injection into arbitrary circuits

Dykaar, D. R., Darack, S. B.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 374 KB

english, 1994

14

Pulsed laser deposition and characterization of epitaxial Cu/TiN/Si(100) heterostructures

Vispute, R. D., Chowdhury, R., Tiwari, P., Narayan, J.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 555 KB

english, 1994

15

Local Ga implantation with focused ion beam and ambipolar lateral carrier transport in strained Si1−xGex /Si quantum wells

Okubo, A., Fukatsu, S., Shiraki, Y.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 365 KB

english, 1994

16

Low-temperature conductivity of epitaxial ZnSe in the impurity band regime

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 318 KB

english, 1994

17

Chemical vapor deposition of heteroepitaxial Si1−x−yGexCy films on (100)Si substrates

Atzmon, Z., Bair, A. E., Jaquez, E. J., Mayer, J. W., Chandrasekhar, D., Smith, David J., Hervig, R. L., Robinson, McD.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 393 KB

english, 1994

18

Small mesa structure in split-gate wires fabricated by scanning tunneling microscope for observing Coulomb blockade effects

Yamada, Syoji, Yamamoto, Masafumi

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 419 KB

english, 1994

19

Theoretical study of field emission from diamond

Huang, Z.-H., Cutler, P. H., Miskovsky, N. M., Sullivan, T. E.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 412 KB

english, 1994

20

Spin selective x-ray absorption spectroscopy: Demonstration using high resolution Fe Kβ fluorescence

Peng, G., Wang, X., Randall, C. R., Moore, J. A., Cramer, S. P.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 273 KB

english, 1994

21

Amplitude squeezing of a multiple quantum-well distributed-feedback semiconductor laser operating at room temperature—Effect of reduction of spontaneous-emission noise by Interferometric method

Kikuchi, Kazuro, Watanabe, Kazuma, Katoh, Kazuhiro

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 261 KB

english, 1994

22

Cross-section transmission electron microscope observations of diamond-turned single-crystal Si surfaces

Shibata, Takayuki, Ono, Atsushi, Kurihara, Kenji, Makino, Eiji, Ikeda, Masayuki

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 499 KB

english, 1994

23

Factors determining the composition of strained GeSi layers grown with disilane and germane

Tweet, D. J., Tatsumi, T., Hirayama, H., Miyanaga, K., Terashima, K.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 265 KB

english, 1994

24

Oxygen depletion of the crystalline (anatase) TiO2 initiated by ionization of the K shell

Uustare, T., Aarik, J., Elango, M.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 232 KB

english, 1994

25

Transient component of leakage current in silicon pn junctions

Murakami, Yoshio, Shingyouji, Takayuki

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 256 KB

english, 1994

26

Influence of plasma on silicon surface during low-energy plasma deposition process: The comparative study on Si3N4/Si structures

Ivančo, J., Thurzo, I., Pinčík, E.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 253 KB

english, 1994

27

Digital etching of GaAs using Se molecular beam and atomic hydrogen beam

Takatani, Shinichiro, Kikawa, Takeshi

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 249 KB

english, 1994

28

Improvement of grain size and deposition rate of microcrystalline silicon by use of very high frequency glow discharge

Finger, F., Hapke, P., Luysberg, M., Carius, R., Wagner, H., Scheib, M.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 530 KB

english, 1994

29

Study on photorefractive effect in KTiOPO4 waveguides

Shi, L. P., Karthe, W., Rasch, A.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 307 KB

english, 1994

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