Volume 65; Issue 9

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Applied Physics Letters
Volume 65; Issue 9

Applied Physics Letters

Volume 65; Issue 9

1

Microwave performance of a 0.25 Î¼m gate AlGaN/GaN heterostructure field effect transistor

Asif Khan, M., Kuznia, J. N., Olson, D. T., Schaff, W. J., Burm, J. W., Shur, M. S.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 555 KB

english, 1994

2

Synthesis of dislocation free Siy(SnxC1âx)1ây alloys by molecular beam deposition and solid phase epitaxy

He, Gang, Savellano, Mark D., Atwater, Harry A.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 709 KB

english, 1994

3

Improved exchange coupling between ferromagnetic Ni-Fe and antiferromagnetic Ni-Mn-based films

Lin, Tsann, Mauri, Daniele, Staud, Norbert, Hwang, Cherngye, Howard, J. Kent, Gorman, Grace L.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 657 KB

english, 1994

4

Magneto-impedance effect in amorphous wires

Panina, L. V., Mohri, K.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 555 KB

english, 1994

5

Photoinduced light scattering in LiTaO3:Nd crystal

Wu, Xinglong, Zhang, Ming-sheng, Chen, Xiaoyuan, Meng, Xiangkang, Feng, Duan

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 599 KB

english, 1994

6

Narrow bandwidth volume holographic optical filter operating at the Kr transition at 1547.82 nm

V. Leyva, G. A. Rakuljic, B. O’conner

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 519 KB

english, 1994

7

Epitaxial KNbO3 thin films on KTaO3, MgAl2O4, and MgO substrates

Chow, A. F., Lichtenwalner, D. J., Woolcott, R. R., Graettinger, T. M., Auciello, O., Kingon, A. I., Boatner, L. A., Parikh, N. R.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 633 KB

english, 1994

8

Correlation between nucleation site density and residual diamond dust density in diamond film deposition

Ihara, Manabu, Komiyama, Hiroshi, Okubo, Tatsuya

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 678 KB

english, 1994

9

Ultraviolet second harmonic generation in radio-frequency sputter-deposited aluminum nitride thin films

Lundquist, P. M., Lin, W. P., Xu, Z. Y., Wong, G. K., Rippert, E. D., Helfrich, J. A., Ketterson, J. B.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 559 KB

english, 1994

10

Elastic misfit stress relaxation in highly strained InGaAs/GaAs structures

Androussi, Y., Lefebvre, A., Courboulès, B., Grandjean, N., Massies, J., Bouhacina, T., Aimé, J. P.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 686 KB

english, 1994

11

Tribological improvements of polished chemically vapor deposited diamond films by fluorination

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 566 KB

english, 1994

12

Nanocolumns composed of GaAs-InAs jointed whiskers and SiO2 covers

Yazawa, M., Haraguchi, K., Koguchi, M., Katsuyama, T., Hiruma, K., Ohta, H.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 575 KB

english, 1994

13

Direct evidence of carbon precipitates in GaAs and InP

Moll, A. J., Haller, E. E., Ager, J. W., Walukiewicz, W.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 664 KB

english, 1994

14

Adhesion force imaging in air and liquid by adhesion mode atomic force microscopy

van der Werf, Kees O., Putman, Constant A. J., de Grooth, Bart G., Greve, Jan

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 773 KB

english, 1994

15

Suppression of strain relaxation and roughening of InGaAs on GaAs using ion-assisted molecular beam epitaxy

Millunchick, J. Mirecki, Barnett, S. A.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 667 KB

english, 1994

16

Submicrometer resonant tunnelling diodes fabricated by photolithography and selective wet etching

Wang, J., Beton, P. H., Mori, N., Buhmann, H., Mansouri, L., Eaves, L., Main, P. C., Foster, T. J., Henini, M.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 693 KB

english, 1994

17

Angular limitations of polymer-based waveguide holograms for 1-to-many V-shaped surface-normal optical interconnects

Li, Maggie M., Chen, Ray T., Tang, Suning, Gerold, Dave

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 616 KB

english, 1994

18

Identification of VSe-impurity pairs in ZnSe:N

Kennedy, T. A., Glaser, E. R., Murdin, B. N., Pidgeon, C. R., Prior, K. A., Cavenett, B. C.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 585 KB

english, 1994

19

Intersubband hole absorption in GaAs-GaInP quantum wells grown by gas source molecular beam epitaxy

Brown, G. J., Hegde, S. M., Hoff, J., Jelen, C., Slivken, S., Michel, E., Duchemin, O., Bigan, E., Razeghi, M.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 588 KB

english, 1994

20

Assessment of hot-hole-induced interface states and trapped carriers in submicron n (metal–oxide semiconductor field effect transistors) by gate-to-drain capacitance measurement

Ghodsi, R., Yeow, Y. T., Alam, M. K.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 566 KB

english, 1994

21

New formation mechanism of electric field domain due to Γ-X sequential tunneling in GaAs/AlAs superlattices

Zhang, Yaohui, Yang, Xiaoping, Liu, Wei, Zhang, Penghua, Jiang, Desheng

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 622 KB

english, 1994

22

Significantly improved mechanical properties in Pb-free, Sn-Zn-In solder alloy by Ag doping

McCormack, M., Kammlott, G. W., Chen, H. S., Jin, S.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 696 KB

english, 1994

23

Damage induced by exposing AlGaAs layers to electron cyclotron resonance SF6/CHF3 plasma

Mitani, Katsuhiko, Oda, Hiroto, Imamura, Yoshinori

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 531 KB

english, 1994

24

Influence of effective-medium dielectric constant on electronic transport in an arylamine-containing glassy polymer

Abkowitz, M., Facci, J. S., Stolka, M.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 528 KB

english, 1994

25

Exciton and biexciton recombination in semiconductor nanocrystals

Zheng, J. P., Kwok, H. S.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 562 KB

english, 1994

26

Atomic structure and luminescence excitation of GaAs/(AlAs)n(GaAs)m quantum wires with the scanning tunneling microscope

Pfister, M., Johnson, M. B., Alvarado, S. F., Salemink, H. W. M., Marti, U., Martin, D., Morier-Genoud, F., Reinhart, F. K.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 785 KB

english, 1994

27

Electrical properties of heavily Si-doped (311)A GaAs grown by molecular beam epitaxy

Agawa, K., Hirakawa, K., Sakamoto, N., Hashimoto, Y., Ikoma, T.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 624 KB

english, 1994

28

Epitaxial growth of iridium and platinum films on sapphire by metalorganic chemical vapor deposition

Vargas, Roberto, Goto, Takashi, Zhang, Wei, Hirai, Toshio

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 518 KB

english, 1994

29

Granularity and superconductor-insulator transition in electrochemically anodized Al films

Wu, Wenhao, Adams, P. W., McCarley, R. L., Dunaway, D. J.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 562 KB

english, 1994

30

Demonstration of quantum confinement in InSb-In1−xAlxSb multiquantum wells using photoluminescence spectroscopy

Saker, M. K., Whittaker, D. M., Skolnick, M. S., McConville, C. F., Whitehouse, C. R., Barnett, S. J., Pitt, A. D., Cullis, A. G., Williams, G. M.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 599 KB

english, 1994

31

Epitaxial lateral overgrowth of silicon by chemical vapor deposition on ultrathin oxide layers

Shih, Y. C., Liu, J. B., Oldham, W. G., Gronsky, R.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 619 KB

english, 1994

32

Reflection Z-scan technique for measurements of optical properties of surfaces

Petrov, D. V., Gomes, A. S. L., de Araújo, Cid B.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 564 KB

english, 1994

33

Growth of high quality single-domain single-crystal films of PbTiO3

Li, Z., Foster, C. M., Guo, D., Zhang, H., Bai, G. R., Baldo, P. M., Rehn, L. E.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 642 KB

english, 1994

34

Core-level photoemission and the structure of the Si/SiO2 interface: A reappraisal

Banaszak Holl, Mark M., Lee, Sunghee, McFeely, F. R.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 632 KB

english, 1994

35

Application of limited reaction processing to atomic layer epitaxy: Growth of cadmium telluride using diisopropyl telluride and dimethyl cadmium

Emerson, Robert M., Hoyt, Judy L., Gibbons, James F.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 565 KB

english, 1994

36

Narrowband mid-infrared generation using KTiOAsO4

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 617 KB

english, 1994

37

Secondary ion mass spectroscopy study of Zn or Cd implanted and rapid thermally annealed Pd/Ge contacts to p-In0.53Ga0.47As

Ressel, P., Strusny, H., Trapp, M., Kräutle, H., Fritzsche, D.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 608 KB

english, 1994

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