Volume 66; Issue 18

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Applied Physics Letters
Volume 66; Issue 18

Applied Physics Letters

Volume 66; Issue 18

1

Thin‐film nonlinear optical diode

Tocci, Michael D., Bloemer, Mark J., Scalora, Michael, Dowling, Jonathan P., Bowden, Charles M.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 326 KB

english, 1995

2

Origin of the 1.54 Î¼m luminescence of erbium-implanted porous silicon

Shin, Jung H., Hoven, G. N. van den, Polman, A.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 375 KB

english, 1995

3

Comparison of surface roughness of polished silicon wafers measured by light scattering topography, soft-x-ray scattering, and atomic-force microscopy

Teichert, C., MacKay, J. F., Savage, D. E., Lagally, M. G., Brohl, M., Wagner, P.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 462 KB

english, 1995

4

Origin of scintillation in cerium-doped oxide crystals

Korzhik, M. V., Trower, W. P.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 322 KB

english, 1995

5

Intense blue emission from porous Î²-SiC formed on C+-implanted silicon

Liao, Liang-Sheng, Bao, Xi-Mao, Yang, Zhi-Feng, Min, Nai-Ben

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 511 KB

english, 1995

6

Stoichiometry and thickness variation of YBa2Cu3O7âx in off-axis pulsed laser deposition

Trajanovic, Z., Senapati, L., Sharma, R. P., Venkatesan, T.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 480 KB

english, 1995

7

Titanium dioxide photocatalysts produced by reactive magnetron sputtering

Weinberger, B. R., Garber, R. B.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 485 KB

english, 1995

8

Photoluminescence imaging of porous silicon using a confocal scanning laser macroscope/microscope

Ribes, A. C., Damaskinos, S., Dixon, A. E., Carver, G. E., Peng, C., Fauchet, P. M., Sham, T. K., Coulthard, I.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 1.05 MB

english, 1995

9

In situ monitoring of internal surface area during the growth of porous silicon

Peter, L. M., Riley, D. J., Wielgosz, R. I.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 229 KB

english, 1995

10

Quasi-one-dimensional single AlGaAs/GaAs Hall bar quantum wires grown on patterned substrates

Shitara, T., Tornow, M., Kurtenbach, A., Weiss, D., Eberl, K., Klitzing, K. v.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 452 KB

english, 1995

11

Mössbauer study of the (Fe1−xNix)4N compounds (0≤x≤0.6)

Li, Fashen, Yang, Jinbo, Xue, Desheng, Zhou, Rongjie

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 330 KB

english, 1995

12

Sensitive high-Tc transition edge bolometer on a micromachined silicon membrane

Neff, H., Laukemper, J., Khrebtov, I. A., Tkachenko, A. D., Steinbeiss, E., Michalke, W., Burnus, M., Heidenblut, T., Hefle, G., Schwierzi, B.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 310 KB

english, 1995

13

Depth correlated lateral variations of layer thicknesses in GaAs-AlGaAs multiple quantum wells investigated by cathodoluminescence

Menniger, J., Kostial, H., Jahn, U., Hey, R., Grahn, H. T.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 1.02 MB

english, 1995

14

GeSi/Si bistable diode exhibiting a large on/off conductance ratio

Zheng, X., Carns, T. K., Wang, K. L.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 657 KB

english, 1995

15

Practical definition of the plasma sheath edge for modeling planar glow discharges

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 328 KB

english, 1995

16

Strain-induced quantum dots by self-organized stressors

Sopanen, M., Lipsanen, H., Ahopelto, J.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 313 KB

english, 1995

17

Across wafer etch rate uniformity in a high density plasma reactor: Experiment and modeling

Surendra, M., Guarnieri, C. R., Selwyn, G. S., Dalvie, M.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 353 KB

english, 1995

18

Kinetics of interdiffusion in strained nanometer period Si/Ge superlattices studied by Raman scattering

Dettmer, K., Freiman, W., Levy, M., Khait, Yu. L., Beserman, R.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 358 KB

english, 1995

19

Characterization of iron based precipitates in GaAs layers grown by molecular-beam epitaxy

Bench, M. W., Carter, C. B., Wang, Feng, Cohen, P. I.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 469 KB

english, 1995

20

Carbon nanotubes synthesized in a hydrogen arc discharge

Wang, X. K., Lin, X. W., Dravid, V. P., Ketterson, J. B., Chang, R. P. H.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 1022 KB

english, 1995

21

Superior output linearity of optimized double heterostructure vertical-cavity top-emitting lasers

Tu, L. W., Schubert, E. F., Wang, Y. H., Weir, B. E., Zydzik, G. J., Cho, A. Y.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 250 KB

english, 1995

22

Electronic noise of submicron n+nn+ diodes under near-oscillatory macroscopic behaviors

Starikov, E., Shiktorov, P., Gružinskis, V., Nougier, J. P., Vaissiere, J. C., Varani, L., Reggiani, L.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 269 KB

english, 1995

23

Three-dimensional morphology of a very rough interface formed in the soldering reaction between eutectic SnPb and Cu

Kim, H. K., Liou, H. K., Tu, K. N.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 593 KB

english, 1995

24

Comparison of trapping–detrapping properties of mobile charge in alkali contaminated metal-oxide-silicon carbide structures

Raynaud, C., Autran, J. L., Briot, J. B., Balland, B., Bécourt, N., Billon, T., Jaussaud, C.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 278 KB

english, 1995

25

Surface dynamics during CdTe growth by molecular beam epitaxy

Arnoult, A., Cibert, J.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 258 KB

english, 1995

26

Atomic resolution ultrahigh vacuum scanning tunneling microscopy of epitaxial diamond (100) films

Stallcup, R. E., Aviles, A. F., Perez, J. M.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 377 KB

english, 1995

27

Effects of chemical composition on humidity sensitivity of Al/BaTiO3/Si structure

Li, G. Q., Lai, P. T., Zeng, S. H., Huang, M. Q., Liu, B. Y.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 250 KB

english, 1995

28

New phase-change rewritable optical recording film having well suppressed material flow for repeated rewriting

Hirotsune, Akemi, Miyauchi, Yasushi, Terao, Motoyasu

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 826 KB

english, 1995

29

Crystalline quality of strain-free GaAs-on-Si structures formed by annealing under ultrahigh pressure

Ishiwara, Hiroshi, Hoshino, Tomohisa, Katahama, Hisashi

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 238 KB

english, 1995

30

All solid state laser source for tunable blue and ultraviolet radiation

Zimmermann, C., Vuletic, V., Hemmerich, A., Hänsch, T. W.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 251 KB

english, 1995

31

Optical properties of GaN epitaxial films grown by low-pressure chemical vapor epitaxy using a new nitrogen source: Hydrazoic acid (HN3)

Bu, Y., Lin, M. C., Fu, L. P., Chtchekine, D. G., Gilliland, G. D., Chen, Y., Ralph, S. E., Stock, S. R.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 252 KB

english, 1995

32

Quantum wirelike induced morphology in InGaAs wells grown on InyAl1−yAs tensile buffer layers over (100)InP vicinal surfaces

Peiró, F., Cornet, A., Morante, J. R., Georgakilas, A., Wood, C., Christou, A.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 671 KB

english, 1995

33

Micromachined submicrometer photodiode for scanning probe microscopy

Davis, R. C., Williams, C. C., Neuzil, P.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 305 KB

english, 1995

34

Perpendicular magnetic anisotropy and strong magneto-optic properties of SrRuO3 epitaxial films

Klein, L., Dodge, J. S., Geballe, T. H., Kapitulnik, A., Marshall, A. F., Antognazza, L., Char, K.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 644 KB

english, 1995

35

Recoil implantation of radioactive transition metals and their investigation in silicon by deep-level transient spectroscopy

Achtziger, N., Gottschalk, H., Licht, T., Meier, J., Rüb, M., Reislöhner, U., Witthuhn, W.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 245 KB

english, 1995

36

Passivation of oxidation induced defects in silicon

Correia, A., Ballutaud, D., Boutry-Forveille, A.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 269 KB

english, 1995

37

Modification of excitonic emission in a GaAs bulk microcavity

Tredicucci, A., Chen, Y., Pellegrini, V., Deparis, C.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 258 KB

english, 1995

38

Substitutionality of Ge atoms in ion implanted AlSb

Yu, Kin Man, Moll, A. J., Chan, Ning, Walukiewicz, W., Becla, P.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 314 KB

english, 1995

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