Volume 66; Issue 21

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Applied Physics Letters
Volume 66; Issue 21

Applied Physics Letters

Volume 66; Issue 21

1

Reflection high energy electron diffraction study of nitrogen plasma interactions with a GaAs (100) surface

Hauenstein, R. J., Collins, D. A., Cai, X. P., OâSteen, M. L., McGill, T. C.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 379 KB

english, 1995

2

Solute segregation to grain boundaries in MgO-doped alumina

Soni, K. K., Thompson, A. M., Harmer, M. P., Williams, D. B., Chabala, J. M., Levi-Setti, R.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 801 KB

english, 1995

3

Efficient up-conversion fluorescence in charge transfer compound crystal

Wang, H. Z., Zheng, X. G., Mao, W. D., Yu, Z. X., Gao, Z. L., Yang, G. Q., Wang, P. F., Wu, S. K.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 383 KB

english, 1995

4

Injection-level dependent surface recombination velocities at the silicon-plasma silicon nitride interface

Aberle, Armin G., Lauinger, Thomas, Schmidt, Jan, Hezel, Rudolf

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 246 KB

english, 1995

5

Optical and mechanical multistability in a dye-doped polymer fiber Fabry-Perot waveguide

Welker, D. J., Kuzyk, M. G.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 273 KB

english, 1995

6

Spontaneous and stimulated emission by Eu-chelate in a planar microcavity

Ebina, Kazuhito, Okada, Yoshiko, Yamasaki, Akira, Ujihara, Kikuo

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 333 KB

english, 1995

7

Control of SiH4/O2 chemical vapor deposition using the gas-phase additive C2H4

Takahashi, T., Egashira, Y., Komiyama, H.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 340 KB

english, 1995

8

Incorporation of oxygen and chlorine atoms into low-temperature (850 °C) silicon epitaxial films by chemical vapor deposition

Miyauchi, Akihiro, Ueda, Kazuhiro, Inoue, Yousuke, Suzuki, Takaya, Imai, Yoshinori

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 352 KB

english, 1995

9

Improved corrosion resistance of cation substituted YBa2Cu3O7−δ

Zhou, Ji-Ping, Savoy, Steven M., Lo, Rung-Kuang, Zhao, Jianai, Arendt, Mark, Zhu, Y. T., Manthiram, A., McDevitt, John T.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 375 KB

english, 1995

10

Diamond growth in premixed propylene-oxygen flames

Shin, Ho Seon, Goodwin, David G.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 355 KB

english, 1995

11

A study of gettering efficiency and stability in Czochralski silicon

McHugo, Scott A., Weber, E. R., Mizuno, M., Kirscht, F. G.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 319 KB

english, 1995

12

Random telegraphic signals in silicon bipolar junction transistors

Neugroschel, Arnost, Sah, Chih-Tang, Carroll, Michael S.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 310 KB

english, 1995

13

Grain boundary misorientations and percolative current paths in high-Jc powder-in-tube (Bi,Pb)2Sr3Ca3Cu3Ox

Goyal, A., Specht, E. D., Kroeger, D. M., Mason, T. A., Dingley, D. J., Riley, G. N., Rupich, M. W.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 417 KB

english, 1995

14

Probing the interfacial and sub-surface structure of Si/Si1−xGex multilayers

Sugden, S., Sofield, C. J., Noakes, T. C. Q., Kubiak, R. A. A., McConville, C. F.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 330 KB

english, 1995

15

Beryllium diffusion in GaAs/AlGaAs single quantum well separate confinement heterostructure laser active regions

Kohnke, G. E., Koch, M. W., Wood, C. E. C., Wicks, G. W.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 308 KB

english, 1995

16

Influence of the As overpressure during the molecular beam epitaxy growth of Si-doped (211)A and (311)A GaAs

Pavesi, L., Henini, M., Johnston, D.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 330 KB

english, 1995

17

Electron paramagnetic resonance hyperfine spectrum of the Si E’ defect associated with weakly bonded hydrogen molecules in synthetic silica optical fibers

Li, J., Kannan, S., Lehman, R. L., Sigel, G. H.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 326 KB

english, 1995

18

Novel metalorganic route for fabrication of BaTiO3 thin ferroelectric films

Nourbakhsh, S., Vasilyeva, I., Carter, J. N.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 410 KB

english, 1995

19

Enhancement of diamond nucleation by ultrasonic substrate abrasion with a mixture of metal and diamond particles

Chakk, Y., Brener, R., Hoffman, A.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 439 KB

english, 1995

20

Novel pseudoalloy approach to epitaxial growth of complex InGaAlAs multilayer structures

Fritz, I. J., Klem, J. F., Hafich, M. J., Howard, A. J.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 318 KB

english, 1995

21

Avalanche breakdown in AlxGa1−xAs alloys and Al0.3Ga0.7As/GaAs multilayers

David, J. P. R., Allam, J., Adams, A. R., Roberts, J. S., Grey, R., Rees, G. J., Robson, P. N.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 358 KB

english, 1995

22

Polarity of a (111)-oriented CdTe layer grown on a (100) Si substrate

Sugiyama, Iwao, Nishijima, Yoshito

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 530 KB

english, 1995

23

Defect distribution in low-temperature molecular beam epitaxy grown Si/Si(100), improved depth profiling with monoenergetic positrons

Szeles, Cs., Asoka-Kumar, P., Lynn, K. G., Gossmann, H.-J., Unterwald, F. C., Boone, T.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 359 KB

english, 1995

24

Epitaxial growth of BaTiO3 thin films at 600 °C by metalorganic chemical vapor deposition

Kaiser, D. L., Vaudin, M. D., Rotter, L. D., Wang, Z. L., Cline, J. P., Hwang, C. S., Marinenko, R. B., Gillen, J. G.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 397 KB

english, 1995

25

Metalorganic molecular beam epitaxy of heavily carbon-doped InP using tertiarybutylphosphine as a carbon auto-doping source

Oh, Je-Hwan, Shirakashi, Jun-ichi, Fukuchi, Fumihiko, Konagai, Makoto

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 253 KB

english, 1995

26

Observation of enhanced photoluminescence in erbium-doped semiconductor microdisk resonator

Chu, D. Y., Ho, S. T., Wang, X. Z., Wessels, B. W., Bi, W. G., Tu, C. W., Espindola, R. P., Wu, S. L.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 295 KB

english, 1995

27

Erratum: ‘‘Substrate bias effect on the capture kinetics of random telegraph signals in submicron p-channel silicon metal–oxide–semiconductor transistors’’ [Appl. Phys. Lett. 66, 598 (1995)]

Simoen, E., Claeys, C.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 223 KB

english, 1995

28

Growth of cubic BN films on β-SiC by ion-assisted pulsed laser deposition

Mirkarimi, P. B., Medlin, D. L., McCarty, K. F., Barbour, J. C.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 435 KB

english, 1995

29

Effect of growth conditions on crystalline quality of metalorganic chemical vapor deposition (111)B CdTe epilayers characterized by x-ray diffraction

Khanin, E., Amir, N., Nemirovsky, Y., Gartstein, E.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 249 KB

english, 1995

30

N-channel polycrystalline silicon thin film transistors using as-deposited polycrystalline silicon and ion doping

Lim, Hong Joo, Ryu, Bong Yeol, Jang, Jin

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 248 KB

english, 1995

31

Characteristics of a δ -doped GaAs/InGaAs p-channel heterostructure field-effect transistor

Hsu, R. T., Hsu, W. C., Kao, M. J., Wang, J. S.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 252 KB

english, 1995

32

Growth and surface chemistry of oxynitride gate dielectric using nitric oxide

Hegde, Rama I., Tobin, Philip J., Reid, Kimberly G., Maiti, Bikas, Ajuria, Sergio A.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 275 KB

english, 1995

33

Observation of a vacuum tunnel gap in a transmission electron microscope using a micromechanical tunneling microscope

Lutwyche, M. I., Wada, Y.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 720 KB

english, 1995

34

Bias-enhanced nucleation of highly oriented diamond on titanium carbide (111) substrates

Wolter, S. D., McClure, M. T., Glass, J. T., Stoner, B. R.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 371 KB

english, 1995

35

Polarization rotation modulator in a strained [110]-oriented multiple quantum well

McCallum, D. S., Huang, X. R., Smirl, Arthur L., Sun, D., Towe, E.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 314 KB

english, 1995

36

Transient current study of low-temperature grown GaAs using an n-i-n structure

Fujioka, H., Weber, E. R., Verma, A. K.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 307 KB

english, 1995

37

Response to ‘‘Comment on ‘In situ photoluminescence spectral study of porous Si in HF aqueous solution’ ’’ [Appl. Phys. Lett. 66, 2914 (1995)]

Wadayama, T., Yamamoto, S., Hatta, A.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 403 KB

english, 1995

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