Volume 66; Issue 5

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Applied Physics Letters
Volume 66; Issue 5

Applied Physics Letters

Volume 66; Issue 5

1

Vertical transition quantum cascade laser with Bragg confined excited state

Faist, JeÌro^me, Capasso, Federico, Sirtori, Carlo, Sivco, Deborah L., Hutchinson, Albert L., Cho, Alfred Y.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 431 KB

english, 1995

2

Theoretical study of strained InGaP quantum-well lasers

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 285 KB

english, 1995

3

Demonstration of a two stage backward-wave oscillator and free-electron laser

Liang, Zheng, Yang, Ziqiang, Den, Tianquan, Liu, Shengang

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 370 KB

english, 1995

4

Ultrafast photodetector materials based on oxygen-doped metalorganic vapor phase epitaxy GaAs

Frankel, Michael Y., Huang, J.-W., Kuech, T. F.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 307 KB

english, 1995

5

Vortex phase diagram and Jc limiting factor in high Tc Bi2Sr2Ca2Cu3O10/Ag superconducting tapes

Li, Qiang, Wiesmann, H. J., Suenaga, M., Motowidlo, L., Haldar, P.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 340 KB

english, 1995

6

Enhanced hot-carrier spontaneous and stimulated recombination in a photopumped vertical cavity AlxGa1−xAs–GaAs quantum well heterostructure with multiple top and bottom native oxide mirrors

Richard, T. A., Maranowski, S. A., Holonyak, N., Chen, E. I., Ries, M. J., Neff, J. G., Grudowski, P. A., Dupuis, R. D.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 369 KB

english, 1995

7

Fano interference of the Raman phonon in heavily boron-doped diamond films grown by chemical vapor deposition

Ager, Joel W., Walukiewicz, W., McCluskey, Matthew, Plano, Mary Anne, Landstrass, Maurice I.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 322 KB

english, 1995

8

Effects of strain on boron diffusion in Si and Si1−xGex

Kuo, P., Hoyt, J. L., Gibbons, J. F., Turner, J. E., Lefforge, D.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 324 KB

english, 1995

9

Plasma-heating induced intensity-dependent gain in semiconductor lasers

Ning, C. Z., Moloney, J. V.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 354 KB

english, 1995

10

Theoretical analysis of ultrafast pump-probe experiments in semiconductor amplifiers

Girndt, A., Knorr, A., Hofmann, M., Koch, S. W.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 354 KB

english, 1995

11

Surface sources of piezoelectric transduction

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 319 KB

english, 1995

12

New experimental approach to the excess carrier transfer in semi-insulating GaAs based on time-resolved photovoltage

Hardalov, Chavdar, Batovski, Dobri, Dalakov, Stefan

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 318 KB

english, 1995

13

Study of the effect of boron doping on the aging of micromachined silicon cantilevers

Pember, Andrew, Smith, Jim, Kemhadjian, Henri

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 354 KB

english, 1995

14

High-speed single-flux-quantum circuit using planarized niobium-trilayer Josephson junction technology

Bunyk, P. I., Oliva, A., Semenov, V. K., Bhushan, M., Likharev, K. K., Lukens, J. E., Ketchen, M. B., Mallison, W. H.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 720 KB

english, 1995

15

Photoluminescence of modulation-doped ordered–disordered GaInP2 homojunctions: Intrinsic versus extrinsic emissions

Driessen, F. A. J. M., Hageman, P. R., Olsthoorn, S. M., Giling, L. J.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 248 KB

english, 1995

16

Phased array of high-power, coherent, monolithic flared amplifier master oscillator power amplifiers

Osinski, J. S., Mehuys, D., Welch, D. F., Waarts, R. G., Major, J. S., Dzurko, K. M., Lang, R. J.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 256 KB

english, 1995

17

Investigation of fast diffusing impurities in silicon by a transient ion drift method

Zamouche, A., Heiser, T., Mesli, A.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 258 KB

english, 1995

18

Frequency analysis of reflection high-energy electron diffraction intensity oscillations during molecular beam epitaxial growth of GaAs on nominally oriented (111)B substrates

Garcia, B. J., Fontaine, C., Muñoz-Yagüe, A.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 255 KB

english, 1995

19

High deposition rate amorphous silicon-based multijunction solar cell

Guha, S., Xu, X., Yang, J., Banerjee, A.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 239 KB

english, 1995

20

High quantum efficiency dual wavelength resonant-cavity photodetector

Srinivasan, A., Murtaza, S., Campbell, J. C., Streetman, B. G.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 276 KB

english, 1995

21

GaInP–AlGaInP band offsets determined from hydrostatic pressure measurements

Kowalski, O. P., Cockburn, J. W., Mowbray, D. J., Skolnick, M. S., Teissier, R., Hopkinson, M.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 257 KB

english, 1995

22

Cathodoluminescence study of erbium and oxygen coimplanted gallium nitride thin films on sapphire substrates

Qiu, C. H., Leksono, M. W., Pankove, J. I., Torvik, J. T., Feuerstein, R. J., Namavar, F.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 237 KB

english, 1995

23

Trap-limited interstitial diffusion and enhanced boron clustering in silicon

Stolk, P. A., Gossmann, H.-J., Eaglesham, D. J., Jacobson, D. C., Poate, J. M., Luftman, H. S.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 281 KB

english, 1995

24

Advantage of rapid thermal annealing over furnace annealing for P-implanted metastable Si/Ge0.12Si0.88

Lie, D. Y. C., Song, J. H., Nicolet, M.-A., Theodore, N. D.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 263 KB

english, 1995

25

Transport properties of a silicon single-electron transistor at 4.2 K

Matsuoka, Hideyuki, Kimura, Shin’ichiro

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 274 KB

english, 1995

26

Surface morphology of metalorganic vapor phase epitaxy grown strained-layer InxGa1−xAs on GaAs observed by atomic force microscopy

Hsu, C. C., Xu, J. B., Wilson, I. H., Wang, S. M.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 556 KB

english, 1995

27

Heteroepitaxial growth of smooth and continuous diamond thin films on silicon substrates via high quality silicon carbide buffer layers

Kawarada, H., Suesada, T., Nagasawa, H.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 599 KB

english, 1995

28

Al diffusion into GaAs from monatomic AlAs layers investigated by localized vibrational modes

Ono, Haruhiko, Ikarashi, Nobuyuki, Baba, Toshio

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 344 KB

english, 1995

29

Blue light emission from a laser diode pumped ring resonator with an organic second-harmonic generation crystal of 8-(4’-acetylphenyl)-1,4-dioxa-8-azaspirol[4.5]decane

Sagawa, M., Kagawa, H., Kakuta, A., Kaji, M., Saeki, M., Namba, Y.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 266 KB

english, 1995

30

Damping of mechanical vibration by superconducting YBa2Cu3O7−x in a magnetic field

Terentiev, A. N., Harrison, J. P., Liang, Ruixing, Bonn, D. A., Hardy, W. N.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 251 KB

english, 1995

31

Asymmetric YBa2Cu3O7−x dc SQUID: A three terminal device with current gain at 77 K

Koelle, D., Kleiner, R., Ludwig, F., Miklich, A. H., Dantsker, E., Clarke, John

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 446 KB

english, 1995

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