Volume 66; Issue 6

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Applied Physics Letters
Volume 66; Issue 6

Applied Physics Letters

Volume 66; Issue 6

1

Thermally stable, low specific resistance (1.30×10-5 Ω cm2) TiC Ohmic contacts to n‐type 6Hα‐SiC

Chaddha, A. K., Parsons, J. D., Kruaval, G. B.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 502 KB

english, 1995

2

Electroluminescence and photoluminescence of Ge-implanted Si/SiO2/Si structures

Shcheglov, K. V., Yang, C. M., Vahala, K. J., Atwater, Harry A.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 480 KB

english, 1995

3

Poly(p-phenylene vinylene)/tris(8-hydroxy) quinoline aluminum heterostructure light emitting diode

Wu, C. C., Chun, J. K. M., Burrows, P. E., Sturm, J. C., Thompson, M. E., Forrest, S. R., Register, R. A.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 301 KB

english, 1995

4

Negative photoconductivity in semiconductor heterostructures

Chaves, A. S., Chacham, H.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 353 KB

english, 1995

5

Novel broad-band excitation of Er3+ luminescence in chalcogenide glasses

S. Q. Gu, S. Ramachandran, E. E. Reuter, D. A. Turnbull, J. T. Verdeyen, S. G. Bishop

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 313 KB

english, 1995

6

Influence of misfit dislocations on the surface morphology of Si1−xGex films

Lutz, M. A., Feenstra, R. M., LeGoues, F. K., Mooney, P. M., Chu, J. O.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 647 KB

english, 1995

7

Second subband population in δ-doped Al0.48In0.52As/Ga0.47In0.53As heterostructures

Lo, Ikai, Mitchel, W. C., Ahoujja, M., Cheng, J.-P., Fathimulla, A., Mier, H.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 351 KB

english, 1995

8

Cation interdiffusion in InGaAsP/InGaAsP multiple quantum wells with constant P/As ratio

Hamoudi, A., Ougazzaden, A., Krauz, Ph., Rao, E. V. K., Juhel, M., Thibierge, H.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 305 KB

english, 1995

9

Low temperature device creation in Si via fast Li electromigration

Chernyak, Leonid, Lyakhovitskaya, Vera, Cahen, David

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 421 KB

english, 1995

10

Josephson effects in YBa2Cu3Oy grain boundary junctions on (100)MgO bicrystal substrates

Lee, Kiejin, Iguchi, Ienari

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 456 KB

english, 1995

11

New generation of oxide target for the deposition of ferroelectric thin films by sputtering

Descamps, M., Remiens, D., Chabal, L., Jaber, B., Thierry, B.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 466 KB

english, 1995

12

Organic electroluminescent devices fabricated using a diamine doped MgF2 thin film as a hole-transporting layer

Tokito, Shizuo, Taga, Yasunori

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 319 KB

english, 1995

13

Hot wall epitaxy of C60 thin films on mica

Stifter, D., Sitter, H.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 317 KB

english, 1995

14

Fabrication of lateral npn-phototransistors with high gain and sub-μm spatial resolution

Baumgartner, P., Engel, C., Abstreiter, G., Böhm, G., Weimann, G.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 341 KB

english, 1995

15

Electrochemical etching of Si(001) in NH4F solutions: Initial stage and {111} microfacet formation

Yau, Shueh-Lin, Kaji, Kazutoshi, Itaya, Kingo

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 569 KB

english, 1995

16

Hot electron transport in SiO2 probed with a scanning tunnel microscope

Ludeke, R., Bauer, A., Cartier, E.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 321 KB

english, 1995

17

Role of misfit dislocations on pseudomorphic high electron mobility transistors

Meshkinpour, M., Goorsky, M. S., Chu, G., Streit, D. C., Block, T. R., Wojtowicz, M.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 378 KB

english, 1995

18

Internal friction and its thermal evolution measured on very thin platinum films

Pelosin, V., Badawi, K. F., Branger, V.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 310 KB

english, 1995

19

Room temperature optical absorption characteristics of GaAs/AlGaAs multiple quantum well structures under external anisotropic strain

Huang, Man-fang, Garmire, Elsa, Partovi, Afshin, Hong, Minghwei

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 325 KB

english, 1995

20

Scanning thermal imaging microscopy using composite cantilever probes

Nakabeppu, O., Chandrachood, M., Wu, Y., Lai, J., Majumdar, A.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 431 KB

english, 1995

21

Fabrication of 0.1 μm metal oxide semiconductor field-effect transistors with the atomic force microscope

Minne, S. C., Soh, H. T., Flueckiger, Ph., Quate, C. F.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 555 KB

english, 1995

22

(2+1)-dimensional fundamental spatial dark soliton

Liu, Shan-liang, Wang, Wen-zheng, Xu, Jing-zhi

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 246 KB

english, 1995

23

Activation of ion implanted dopants in α-SiC

Ahmed, S., Barbero, C. J., Sigmon, T. W.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 251 KB

english, 1995

24

Development of an optical emission spectroscopy-based method for dynamic compositional analysis of sputter deposited films from multicomponent targets

Leedy, K. D., Rigsbee, J. M.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 248 KB

english, 1995

25

Growth of InN films on GaAs (111) and GaP(111) substrates by microwave-excited metalorganic vapor phase epitaxy

Guo, Qixin, Ogawa, Hiroshi, Yamano, Hirofumi, Yoshida, Akira

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 309 KB

english, 1995

26

Operation and dynamics of ZnSe/ZnMgSSe double heterostructure blue laser diode at room temperature

Okuyama, Hiroyuki, Kato, Eisaku, Itoh, Satoshi, Nakayama, Norikazu, Ohata, Toyoharu, Ishibashi, Akira

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 295 KB

english, 1995

27

Phase-matched frequency doubling in an aluminum nitride waveguide with a tunable laser source

Blanc, D., Bouchoux, A. M., Plumereau, C., Cachard, A., Roux, J. F.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 279 KB

english, 1995

28

Field dependent permittivity in metal-semiconducting SrTiO3 Schottky diodes

van der Berg, R. A., Blom, P. W. M., Cillessen, J. F. M., Wolf, R. M.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 253 KB

english, 1995

29

Very strong negative differential resistance real-space transfer transistor using a multiple δ-doping GaAs/InGaAs pseudomorphic heterostructure

Wu, C. L., Hsu, W. C., Tsai, M. S., Shieh, H. M.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 276 KB

english, 1995

30

Enhancement of phosphorus incorporation and growth rate of epitaxial diamond films by the addition of nitrogen

Cao, G. Z., Enckevort, W. J. P. van, Giling, L. J., de Kruif, R. C. M.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 237 KB

english, 1995

31

Effects of deposition conditions on transport properties of intrinsic hydrogenated amorphous silicon and hydrogenated amorphous silicon carbide films investigated by the photomixing technique

Tang, Yi, Braunstein, R.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 256 KB

english, 1995

32

Subpicosecond, resonant refractive index changes in germanium near 1.5 μm

Mak, G., van Driel, H. M.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 288 KB

english, 1995

33

In situ real time measurement of the incubation time for silicon nucleation on silicon dioxide in a rapid thermal process

Hu, Y. Z., Diehl, D. J., Liu, Q., Zhao, C. Y., Irene, E. A.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 463 KB

english, 1995

34

Aging of critical currents and irreversibility line in melt textured YBa2Cu3O7

Martínez, B., Sandiumenge, F., Piñol, S., Vilalta, N., Fontcuberta, J., Obradors, X.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 352 KB

english, 1995

35

Elastic constants and Poisson ratio in the system AlAs–GaAs

Krieger, M., Sigg, H., Herres, N., Bachem, K., Köhler, K.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 340 KB

english, 1995

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