Volume 66; Issue 9

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Applied Physics Letters
Volume 66; Issue 9

Applied Physics Letters

Volume 66; Issue 9

1

High‐resolution scanning SQUID microscope

Kirtley, J. R., Ketchen, M. B., Stawiasz, K. G., Sun, J. Z., Gallagher, W. J., Blanton, S. H., Wind, S. J.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 418 KB

english, 1995

2

Epitaxial lift‐off of ZnSe based II–VI structures

Brys, C., Vermaerke, F., Demeester, P., Van Daele, P., Rakennus, K., Salokatve, A., Uusimaa, P., Pessa, M., Bradley, A. L., Doran, J. P., OGorman, J., Hegarty, J.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 489 KB

english, 1995

3

Optimization of interface parameters and bulk properties in ZnSe‐GaAs heterostructures

Bonanni, A., Vanzetti, L., Sorba, L., Franciosi, A., Lomascolo, M., Prete, P., Cingolani, R.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 375 KB

english, 1995

4

Transport study of self-supporting porous silicon

Fejfar, A., Pelant, I., SÌiÌpek, E., KocÌka, J., JusÌka, G., Matsumoto, T., Kanemitsu, Y.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 367 KB

english, 1995

5

Image widening not only a question of tip sample convolution

Tegenfeldt, Jonas O., Montelius, Lars

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 391 KB

english, 1995

6

Sharp excitonic photoluminescence from epitaxial InAs

Lacroix, Y., Watkins, S. P., Tran, C. A., Thewalt, M. L. W.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 333 KB

english, 1995

7

Electron effective masses in 4H SiC

Son, N. T., Chen, W. M., Kordina, O., Konstantinov, A. O., Monemar, B., JanzeÌn, E., Hofman, D. M., Volm, D., Drechsler, M., Meyer, B. K.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 419 KB

english, 1995

8

Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300âÂ°C

Khan, M. Asif, Shur, Michael S., Kuznia, John N., Chen, Q., Burm, Jin, Schaff, William

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 234 KB

english, 1995

9

Calculated second-harmonic susceptibilities of BN, AlN, and GaN

Chen, Jian, Levine, Zachary H., Wilkins, John W.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 261 KB

english, 1995

10

Heat transport properties of semiconductors under nonuniform stress

Aflatooni, K., Nathan, A.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 307 KB

english, 1995

11

Correlation of dielectric breakdown with hole transport for ultrathin thermal oxides and N2O oxynitrides

Hao, M.-Y., Chen, W.-M., Lai, K., Lee, J. C., Gardner, M., Fulford, J.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 330 KB

english, 1995

12

Observation of electric field gradients near field-emission cathode arrays

Liang, Y., Bonnell, D. A., Goodhue, W. D., Rathman, D. D., Bozler, C. O.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 475 KB

english, 1995

13

p-type conduction in Mg-doped Ga0.91In0.09N grown by metalorganic vapor-phase epitaxy

Yamasaki, S., Asami, S., Shibata, N., Koike, M., Manabe, K., Tanaka, T., Amano, H., Akasaki, I.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 299 KB

english, 1995

14

High-field domain formation in GaAs/AlGaAs superlattices

Han, Z. Y., Yoon, S. F., Radhakrishnan, K., Zhang, D. H.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 318 KB

english, 1995

15

Near-field magneto-optical imaging in scanning tunneling microscopy

Prins, M. W. J., Groeneveld, R. H. M., Abraham, D. L., van Kempen, H., van Kesteren, H. W.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 431 KB

english, 1995

16

Visible luminescence from one- and two-dimensional silicon structures produced by conventional lithographic and reactive ion etching techniques

Nassiopoulos, A. G., Grigoropoulos, S., Gogolides, E., Papadimitriou, D.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 632 KB

english, 1995

17

Double-fused 1.52-μm vertical-cavity lasers

Babić, Dubravko I., Dudley, James J., Streubel, Klaus, Mirin, Richard P., Bowers, John E., Hu, Evelyn L.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 442 KB

english, 1995

18

Intrinsic multiple quantum well spatial light modulators

Rabinovich, W. S., Bowman, S. R., Katzer, D. S., Kyono, C. S.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 319 KB

english, 1995

19

Measurements of sheath electric fields in a high pressure helium radio frequency discharge

Bowden, M. D., Choi, Y. W., Muraoka, K., Maeda, M.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 323 KB

english, 1995

20

The S-passivation of Ge(100)-(1×1)

Anderson, G. W., Hanf, M. C., Norton, P. R., Lu, Z. H., Graham, M. J.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 360 KB

english, 1995

21

Control of charge trapping in a photorefractive polymer

Malliaras, G. G., Krasnikov, V. V., Bolink, H. J., Hadziioannou, G.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 310 KB

english, 1995

22

All-fiber femtosecond pulse amplification circuit using chirped Bragg gratings

Galvanauskas, A., Fermann, M. E., Harter, D., Sugden, K., Bennion, I.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 320 KB

english, 1995

23

Hydrogen passivation in nitrogen and chlorine-doped ZnSe films grown by gas source molecular beam epitaxy

Ho, E., Fisher, P. A., House, J. L., Petrich, G. S., Kolodziejski, L. A., Walker, J., Johnson, N. M.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 333 KB

english, 1995

24

Far-infrared radiation-induced thermopower in a quantum point contact

Wyss, Rolf A., Eugster, C. C., del Alamo, J. A., Hu, Qing, Rooks, M. J., Melloch, M. R.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 351 KB

english, 1995

25

Greatly improved adhesion of gold films sputter-deposited on laser-treated and thermally annealed alumina

Pedraza, A. J., Kumar, R. A., Lowndes, Douglas H.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 321 KB

english, 1995

26

Monolithic optical transmitter circuit using the InGaP/GaAs material system

Nichols, D. T., Lopata, J., Hobson, W. S., Smith, P. R., Dutta, N. K.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 232 KB

english, 1995

27

Chemical bonding and atomic structure of Rb+ exchanged KTiOPO4 waveguides probed by micro-Raman spectroscopy

Tuschel, David D., Paz-Pujalt, Gustavo R., Risk, William P.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 251 KB

english, 1995

28

Observation of dressed-exciton oscillating emission over a wide wavelength range in a semiconductor microcavity

Cao, H., Jacobson, J., Björk, G., Pau, S., Yamamoto, Y.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 251 KB

english, 1995

29

Coimplantation of carbon implanted GaAs: Energy and dose rate observations

Morton, R., Zhu, B., Lau, S. S., Poker, D. B.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 261 KB

english, 1995

30

Precipitation in heavily arsenic-implanted GexSi1−x alloys

Fan, T. W., Nejim, A., Zhang, J. P., Wang, Z. G., Hemment, P. L. F., Chescoe, D.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 311 KB

english, 1995

31

Optically switched resonant tunneling diodes

Moise, T. S., Kao, Y.-C., Garrett, L. D., Campbell, J. C.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 659 KB

english, 1995

32

Measurement of the electron ionization coefficient at low electric fields in InGaAs-based heterojunction bipolar transistors

Canali, C., Forzan, C., Neviani, A., Vendrame, L., Zanoni, E., Hamm, R. A., Malik, R. J., Capasso, F., Chandrasekhar, S.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 266 KB

english, 1995

33

High reflectivity self-pumped phase conjugation in an unusually cut Fe-doped KTa1−xNbxO3 crystal

Mu, Xiaodong, Shao, Zongshu, Yue, Xuefeng, Chen, Jun, Guan, Qingcai, Wang, Jiyang

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 369 KB

english, 1995

34

Investigation of the epitaxial growth of InxGa1−xAs on GaAs(001) and extension of two-dimensional–three-dimensional growth mode transition

Li, Wei, Wang, Zhanguo, Liang, Jiben, Liao, Qiwei, Xu, Bo, Zhu, Zhanping, Yang, Bin

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 266 KB

english, 1995

35

Laser cavity mirror imperfections and reflectivity: A time-dependent numerical approach

Vurgaftman, Igor, Singh, Jasprit

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 377 KB

english, 1995

36

Nonlinear optical response of hydrogenated amorphous silicon films studied by laser induced transient gratings

Ribeiro, R. M., Margulis, W., Leite, C. A. F., Guedes, I., Misoguti, L., Bagnato, V. S.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 263 KB

english, 1995

37

In situ optical diagnosis on hydrogenated amorphous silicon grown by vibration superimposed plasma chemical vapor deposition

Naito, Nobuo, Takano, Akihiro, Sumiya, Masatomo, Kawasaki, Masashi, Koinuma, Hideomi

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 329 KB

english, 1995

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