Volume 67; Issue 11

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Applied Physics Letters
Volume 67; Issue 11

Applied Physics Letters

Volume 67; Issue 11

1

Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire

Kapolnek, D., Wu, X. H., Heying, B., Keller, S., Keller, B. P., Mishra, U. K., DenBaars, S. P., Speck, J. S.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 359 KB

english, 1995

2

One‐dimensional exciton diffusion in GaAs quantum wires

Nagamune, Y., Watabe, H., Sogawa, F., Arakawa, Y.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 555 KB

english, 1995

3

Decomposition and primary crystallization in undercooled Zr41.2Ti13.8Cu12.5Ni10.0Be22.5 melts

Busch, R., Schneider, S., Peker, A., Johnson, W. L.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 546 KB

english, 1995

4

Theoretical optical gain in InGaAsP/InP quantum well lasers: Evaluation of different envelope function schemes

Meney, A. T., Jones, G.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 250 KB

english, 1995

5

Are electrical properties of an aluminumâporous silicon junction governed by dangling bonds?

Stievenard, D., Deresmes, D.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 336 KB

english, 1995

6

Erratum: ‘‘Ferroelectric thin films with polarization gradients normal to the growth surface’’ [Appl. Phys. Lett. 67, 721 (1995)]

Mantese, Joseph V., Schubring, Norman W., Micheli, Adolph L., Catalan, Antonio B.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 286 KB

english, 1995

7

Impedance-corrected carrier lifetime measurements in semiconductor lasers

Shtengel, G. E., Ackerman, D. A., Morton, P. A., Flynn, E. J., Hybertsen, M. S.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 346 KB

english, 1995

8

Amorphous Ni50Nb50/C multilayers for soft x rays made by pulsed laser deposition

Vitta, Satish, Metzger, T. H., Mai, H., Peisl, J.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 297 KB

english, 1995

9

Characterization of strain in an advanced semiconductor laser structure with nanometer range resolution using a new algorithm for electron diffraction contrast imaging interpretation

Janssens, Koenraad G. F., Van der Biest, Omer, Vanhellemont, Jan, Maes, Herman E., Hull, Robert

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 448 KB

english, 1995

10

Theoretical analysis of optimal conditions in quantum structure semiconductor lasers for low threshold current

Nambu, Yoshihiro, Asakawa, Kiyoshi

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 345 KB

english, 1995

11

Porous Si anisotropy from photoluminescence polarization

Kovalev, D., Chorin, M. Ben, Diener, J., Koch, F., Efros, Al. L., Rosen, M., Gippius, N. A., Tikhodeev, S. G.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 362 KB

english, 1995

12

Synthesis of aluminum oxide thin films: Use of aluminum tris-dipivaloylmethanate as a new low pressure metal organic chemical vapor deposition precursor

Ciliberto, E., Fragalà, I., Rizza, R., Spoto, G., Allen, G. C.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 323 KB

english, 1995

13

Blue frequency shift due to external light injection in a distributed-feedback laser diode

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 353 KB

english, 1995

14

Photoluminescence of ordered Ga0.5In0.5P grown by metalorganic vapor phase epitaxy

Dong, Jian-Rong, Wang, Zhan-Guo, Liu, Xiang-Lin, Lu, Da-Cheng, Wang, Du, Wang, Xiao-Hui

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 299 KB

english, 1995

15

In situ observation of indium segregation by reflectance difference spectroscopy in single monolayer heterostructures grown by atomic layer epitaxy

Arès, R., Tran, C. A., Watkins, S. P.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 305 KB

english, 1995

16

Quantum well intersubband heterodyne infrared detection up to 82 GHz

Liu, H. C., Li, Jianmeng, Brown, E. R., McIntosh, K. A., Nichols, K. B., Manfra, M. J.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 349 KB

english, 1995

17

Direct-current bias effect on the synthesis of (001) textured diamond films on silicon

Lee, J. S., Liu, K. S., Lin, I-Nan

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 949 KB

english, 1995

18

Photoluminescence decay dynamics in an InGaN/AlGaN/GaN double-heterostructure blue-light-emitting diode

Mohs, Georg, Fluegel, Brian, Giessen, Harald, Tajalli, Habib, Peyghambarian, Nasser, Chiu, Pei-Chih, Phillips, B. Scott, Osiński, Marek

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 343 KB

english, 1995

19

X-ray photoelectron diffraction of (100)-oriented chemical vapor deposited diamond films on silicon (100)

Schaller, E., Küttel, O. M., Aebi, P., Schlapbach, L.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 502 KB

english, 1995

20

Noncontact photothermal infrared radiometric deep-level transient spectroscopy of GaAs wafers

Mandelis, A., Budiman, R. A., Vargas, M., Wolff, D.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 323 KB

english, 1995

21

In situ x-ray diffraction study of the role of annealing ambient in epitaxial CoSi2 growth from Co/Ti bilayers on Si(001)

Selinder, T. I., Miller, D. J., Gray, K. E.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 335 KB

english, 1995

22

Nd3+:ethylene glycol amplifier and its stimulated emission cross section

Han, K. G., Kong, H. J., Kim, H. S., Um, G. Y.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 322 KB

english, 1995

23

Structure and magnetocrystalline anisotropy of R2Fe17−xGax compounds with higher Ga concentration

Shen, Bao-gen, Cheng, Zhao-hua, Liang, Bing, Guo, Hui-qun, Zhang, Jun-xian, Gong, Hua-yang, Wang, Fang-wei, Yan, Qi-wei, Zhan, Wen-shan

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 317 KB

english, 1995

24

Role of interface in ion mixing induced amorphization in the Ag–Mo system with very positive heat of formation

Jin, O., Zhang, Z. J., Liu, B. X.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 380 KB

english, 1995

25

High-resolution temperature measurement of void dynamics induced by electromigration in aluminum metallization

Kondo, Seiichi, Hinode, Kenji

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 371 KB

english, 1995

26

Microstructure of heteroepitaxial CdTe grown on misoriented Si(001) substrates

Smith, David J., Tsen, S.-C. Y., Chen, Y. P., Faurie, J.-P., Sivananthan, S.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 760 KB

english, 1995

27

Fabrication of nanostructures using atomic-force-microscope-based lithography

Sohn, L. L., Willett, R. L.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 451 KB

english, 1995

28

A 4.5 kV 6H silicon carbide rectifier

Kordina, O., Bergman, J. P., Henry, A., Janzén, E., Savage, S., André, J., Ramberg, L. P., Lindefelt, U., Hermansson, W., Bergman, K.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 259 KB

english, 1995

29

Effect of incorporated nitrogen on the kinetics of thin rapid thermal N2O oxides

Green, M. L., Brasen, D., Feldman, L. C., Lennard, W., Tang, H.-T.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 240 KB

english, 1995

30

High quality epitaxial aluminum nitride layers on sapphire by pulsed laser deposition

Vispute, R. D., Wu, Hong, Narayan, J.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 688 KB

english, 1995

31

Persistent photoconductivity and electron density dependent magnetotransport measurements in narrow InGaAs/InP quantum wells

Müller, S., Pillath, J., Bauhofer, W., Kohl, A., Heime, K.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 275 KB

english, 1995

32

Phase locking in a multijunction superconducting loop

Darula, M., Beuven, S., Siegel, M., Darulova, A., Seidel, P.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 355 KB

english, 1995

33

Investigation of the interfacial order of nematic liquid crystal on photopolymer coated conducting glass substrates with a scanning tunneling microscope

Jain, S. C., Rajesh, K., Samanta, S. B., Narlikar, A. V.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 1.21 MB

english, 1995

34

In-plane-gate transistors fabricated from Si/SiGe heterostructures by focused ion beam implantation

Többen, D., de Vries, D. K., Wieck, A. D., Holzmann, M., Abstreiter, G., Schäffler, F.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 264 KB

english, 1995

35

Synthesis of fullerenes from diamond

Yosida, Yositaka

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 636 KB

english, 1995

36

Influence of the process environment on the thermal intermixing of GaAs/AlAs/AlGaAs double barrier quantum wells

Kupka, R. K., Chen, Y.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 307 KB

english, 1995

37

High quality hydrogenated amorphous germanium prepared by the hot wire technique

Zanzig, L., Beyer, W., Wagner, H.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 332 KB

english, 1995

38

Influence of interace and buffer layer on the structure of InAs/GaSb superlattices

Twigg, M. E., Bennett, B. R., Shanabrook, B. V.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 495 KB

english, 1995

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