Volume 67; Issue 24

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Applied Physics Letters
Volume 67; Issue 24

Applied Physics Letters

Volume 67; Issue 24

1

Free‐space electro‐optic sampling of terahertz beams

Wu, Q., Zhang, X.‐C.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 355 KB

english, 1995

2

Comparison of one-photon and two-photon effects in the photosensitivity of germanium-doped silica optical fibers exposed to intense ArF excimer laser pulses

Albert, J., Malo, B., Hill, K. O., Bilodeau, F., Johnson, D. C., TheÌriault, S.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 369 KB

english, 1995

3

Critical assessment of thermal models for laser sputtering at high fluences

Miotello, Antonio, Kelly, Roger

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 376 KB

english, 1995

4

Crystal structure and Raman scattering in Zn1âxMgxSe alloys

Huang, Daming, Jin, Caixia, Wang, Donghong, Liu, Xiaohan, Wang, Jie, Wang, Xun

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 351 KB

english, 1995

5

Origins of interfacial disorder in GaSb/InAs superlattices

Thibado, P. M., Bennett, B. R., Twigg, M. E., Shanabrook, B. V., Whitman, L. J.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 330 KB

english, 1995

6

Electrical properties of Schottky barrier formed on as-grown and oxidized surface of homoepitaxially grown diamond (001) film

Kiyota, Hideo, Matsushima, Eiichi, Sato, Keisuke, Okushi, Hideyo, Ando, Toshihiro, Kamo, Mutsukazu, Sato, Yoichiro, Iida, Masamori

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 318 KB

english, 1995

7

Temperature dependence of thermophysical properties of GaAs/AlAs periodic structure

X. Y. Yu, G. Chen, A. Verma, J. S. Smith

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 271 KB

english, 1995

8

Dislocation behavior in InGaAs step- and alternating step-graded structures: Design rules for buffer fabrication

Araújo, D., González, D., García, R., Sacedón, A., Calleja, E.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 578 KB

english, 1995

9

High efficiency top surface-emitting lasers fabricated by four implantation using tungsten wire as mask

Liu, Ying, Zhang, Xiaobo, Jiang, Xiuying, Liu, Suping, Li, Xuemei, Du, Guotong, Gao, Dingsan, Lin, Shiming, Kang, Xuejun, Gao, Honghai, Gao, Junhua, Wang, Hongjie

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 301 KB

english, 1995

10

2000 h stable operation in 0.87 μm light-emitting diode using stress-free InGaP/GaAs/Si

Egawa, T., Jimbo, T., Dong, J., Matsumoto, K., Umeno, M.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 404 KB

english, 1995

11

MgO seed layers for CoCrPt/Cr longitudinal magnetic recording media

Lee, Li-Lien, Cheong, B. K., Laughlin, D. E., Lambeth, D. N.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 769 KB

english, 1995

12

Radiative recombination in near-surface strained Si1−xGex/Si quantum wells

Fukatsu, S., Akiyama, H., Shiraki, Y., Sakaki, H.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 333 KB

english, 1995

13

Novel current–voltage characteristics in an InP-based resonant-tunneling high electron mobility transistor

Chen, K. J., Maezawa, K., Yamamoto, M.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 1.29 MB

english, 1995

14

High repetition rate far-infrared p-type germanium hot hole lasers

Bründermann, E., Röser, H. P., Heiss, W., Gornik, E., Haller, E. E.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 320 KB

english, 1995

15

Vacancy generation resulting from electrical deactivation of arsenic

Lawther, D. W., Myler, U., Simpson, P. J., Rousseau, P. M., Griffin, P. B., Plummer, J. D.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 347 KB

english, 1995

16

All-optical programmable AND gate implementation in a germanium-doped silica planar waveguide

Ranon, P. M., Dajani, I., Kester, J. J., Alley, T. G.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 317 KB

english, 1995

17

X-ray Fraunhofer diffraction patterns from a thin-film waveguide

Feng, Y. P., Sinha, S. K., Fullerton, Eric E., Grübel, G., Abernathy, D., Siddons, D. P., Hastings, J. B.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 332 KB

english, 1995

18

Photon-assisted cryoetching of III–V binary compounds by Cl2 at 193 nm

Lin, J.-L., Freiler, M. B., Levy, M., Osgood, R. M., Collins, D., McGill, T. C.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 351 KB

english, 1995

19

Comment on ‘‘Calculation of resonant absorption and photoresponse measurement in p-type GaAs/AlGaAs quantum wells’’ [Appl. Phys. Lett. 66, 1659 (1995)]

Man, P., Pan, D. S.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 321 KB

english, 1995

20

Near-field optical characterization of the photoluminescence from partially ordered (GaIn)P

Gregor, M. J., Blome, P. G., Ulbrich, R. G., Grossmann, P., Grosse, S., Feldmann, J., Stolz, W., Göbel, E. O., Arent, D. J., Bode, M., Bertness, K. A., Olson, J. M.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 406 KB

english, 1995

21

Comment on ‘‘Enhanced Jc’s of YBa2Cu3O7−x–Ag ex situ annealed coevaporated films on LaAlO3 (100) substrates’’ [Appl. Phys. Lett. 65, 2350 (1994)]

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 318 KB

english, 1995

22

Growth of polycrystalline silicon at 470 °C by magnetron sputtering onto a sputtered μc-hydrogenated silicon seed layer

Yang, Y. H., Abelson, J. R.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 345 KB

english, 1995

23

Room-temperature photoluminescence of erbium-doped hydrogenated amorphous silicon

Bresler, M. S., Gusev, O. B., Kudoyarova, V. Kh., Kuznetsov, A. N., Pak, P. E., Terukov, E. I., Yassievich, I. N., Zakharchenya, B. P., Fuhs, W., Sturm, A.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 328 KB

english, 1995

24

Influence of low energy Ar-sputtering on the electronic properties of InAs-based quantum well structures

Magnée, P. H. C., den Hartog, S. G., Wees, B. J. van, Klapwijk, T. M., van de Graaf, W., Borghs, G.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 346 KB

english, 1995

25

Response to ‘‘Comment on ‘Enhanced Jc’s of YBa2Cu3O7−x–Ag ex situ annealed coevaporated films on LaAlO3 (100) substrates’ ’’ [Appl. Phys. Lett. 67, 3650 (1995)]

Clausen, T., Ejrnæs, M., Olesen, M., Hilger, K., Skov, J. L., Bodin, P., Kühle, A., Chorkendorff, I.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 231 KB

english, 1995

26

Dependence of mode size and temporal response on the mirror contrast ratio in microcavity lasers

Deng, H., Deppe, D. G., Shin, J.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 317 KB

english, 1995

27

Influence of the position of deep levels on generation-recombination noise

Godoy, A., Palma, A., Jiménez-Tejada, J. A., Carceller, J. E.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 261 KB

english, 1995

28

Temperature dependent pohotoluminescence investigation of AlGaAs/GaAs quantum wires grown by flow rate modulation epitaxy

Wang, Xue-Lun, Ogura, Mutsuo, Matsuhata, Hirofumi

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 1.86 MB

english, 1995

29

Optical bistability in two-dimensional nonlinear optical superlattice with two incident waves

Chen, Xiang-fei, Lu, Ya-lin, Wang, Zhen-lin, Ming, Nai-ben

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 272 KB

english, 1995

30

Role of radiative and nonradiative processes on the temperature sensitivity of strained and unstrained 1.5 μm InGaAs(P) quantum well lasers

Braithwaite, J., Silver, M., Wilkinson, V. A., O’Reilly, E. P., Adams, A. R.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 270 KB

english, 1995

31

Change in sign of the photocurrent in a coherent asymmetric superlattice

Sumetskii, Michael I., Baranger, Harold U.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 282 KB

english, 1995

32

Evidence from ion channeling images for the elastic relaxation of a Si0.85Ge0.15 layer grown on a patterned Si substrate

King, P. J. C., Breese, M. B. H., Smulders, P. J. M., Wilkinson, A. J., Booker, G. R., Parker, E. H. C., Grime, G. W.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 590 KB

english, 1995

33

Determination of the X conduction-subband energies in type II GaAs/AlAs/GaAs quantum well by deep level transient spectroscopy

Zhu, Qin-Sheng, Gu, Zong-Quan, Zhong, Zhan-Tian, Zhou, Zeng-Qi, Lu, Li-Wu

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 259 KB

english, 1995

34

PdAl Schottky contact to In0.52Al0.48As grown by metalorganic chemical vapor deposition

Lin, C.-F., Chang, Y. A., Pan, N., Huang, J.-W., Kuech, T. F.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 261 KB

english, 1995

35

Self-propagating room-temperature silicon wafer bonding in ultrahigh vacuum

Gösele, U., Stenzel, H., Martini, T., Steinkirchner, J., Conrad, D., Scheerschmidt, K.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 530 KB

english, 1995

36

Effect of step structure on ordering in GaInP

Su, L. C., Stringfellow, G. B.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 356 KB

english, 1995

37

p- to n-type conversion in GaSb by ion beam milling

Panin, G. N., Dutta, P. S., Piqueras, J., Dieguez, E.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 451 KB

english, 1995

38

Effect of chemical and ion-beam etching on the atomic structure of interfaces in YBa2Cu3O7/PrBa2Cu3O7 Josephson junctions

Jia, C. L., Faley, M. I., Poppe, U., Urban, K.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 731 KB

english, 1995

39

Pulsed excimer laser etching of La0.75Ca0.25MnOx thin films

Dhote, A. M., Shreekala, R., Patil, S. I., Ogale, S. B., Venkatesan, T., Williams, C. M.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 413 KB

english, 1995

40

Surface roughness and defect morphology in electron cyclotron resonance hydrogen plasma cleaned (100) silicon at low temperatures

Hwang, Ki-Hyun, Yoon, Euijoon, Whang, Ki-Woong, Lee, Jeong Yong

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 3.73 MB

english, 1995

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