Volume 67; Issue 9

Applied Physics Letters

Volume 67; Issue 9
3

Diamond epitaxy on (001) silicon: An interface investigation

Year:
1995
Language:
english
File:
PDF, 793 KB
english, 1995
4

On p-type doping in GaN—acceptor binding energies

Year:
1995
Language:
english
File:
PDF, 389 KB
english, 1995
9

Nucleation and growth of diamond films on aluminum nitride coated nickel

Year:
1995
Language:
english
File:
PDF, 505 KB
english, 1995
10

Stress induced Li-Li pairs reorientation in Al-Li alloys

Year:
1995
Language:
english
File:
PDF, 347 KB
english, 1995
12

Photovoltaic properties of a molecular semiconductor modulated by an exciton-dissociating film

Year:
1995
Language:
english
File:
PDF, 312 KB
english, 1995
17

Hydrogen passivation of donors and acceptors in SiC

Year:
1995
Language:
english
File:
PDF, 308 KB
english, 1995
22

Study of chemically assisted ion beam etching of GaN using HCl gas

Year:
1995
Language:
english
File:
PDF, 478 KB
english, 1995
25

A novel method for determining thin film density by energy-dispersive x-ray reflectivity

Year:
1995
Language:
english
File:
PDF, 324 KB
english, 1995
26

Ultraviolet dosimetry using thermoluminescence of semiconductor-doped Vycor glass

Year:
1995
Language:
english
File:
PDF, 309 KB
english, 1995
38

A novel technique for p-type doping of ZnSe

Year:
1995
Language:
english
File:
PDF, 249 KB
english, 1995