Volume 68; Issue 1

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Applied Physics Letters
Volume 68; Issue 1

Applied Physics Letters

Volume 68; Issue 1

1

Reduced lateral straggling of implantation induced defects in III/V heterostructures by ion implantation along channeling directions

Kieslich, A., Doleschel, H., Kieseling, F., Reithmaier, J. P., Forchel, A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 326 KB

english, 1996

2

Spatial distribution of the luminescence in GaN thin films

Ponce, F. A., Bour, D. P., Gotz, W., Wright, P. J.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 613 KB

english, 1996

3

Giant magnetoresistance in fine particle of La0.67Ca0.33MnO3 synthesized at low temperatures

SaÌnchez, R. D., Rivas, J., VaÌzquez-VaÌzquez, C., LoÌpez-Quintela, A., Causa, M. T., Tovar, M., Oseroff, S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 313 KB

english, 1996

4

Growth and characterization of AlInGaN quaternary alloys

McIntosh, F. G., Boutros, K. S., Roberts, J. C., Bedair, S. M., Piner, E. L., El-Masry, N. A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 268 KB

english, 1996

5

Microhollow cathode discharges

Schoenbach, K. H., Verhappen, R., Tessnow, T., Peterkin, F. E., Byszewski, W. W.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 512 KB

english, 1996

6

Magnetoelastic properties of nickel thin films

Betz, J., du TreÌmolet de Lacheisserie, E., Baczewski, L. T.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 237 KB

english, 1996

7

Oxygen precipitation in Czochralski-grown silicon wafers during hydrogen annealing

K. Izunome, H. Shirai, K. Kashima, J. Yoshikawa, A. Hojo

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 1.06 MB

english, 1996

8

Preparation of three-dimensionally oriented polycrystalline Si film

Di, G. Q., Lin, H., Uchida, N., Kurata, Y., Koumoto, K., Hasegawa, S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 416 KB

english, 1996

9

Silicon based light emitting gels

Vinod, M. P., Vijayamohanan, K.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 303 KB

english, 1996

10

Irreversible light-enhanced degradation in amorphous silicon solar cells at elevated temperatures

Carlson, D. E., Rajan, K.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 305 KB

english, 1996

11

Electroabsorption field imaging between coplanar metal contacts on semi-insulating semiconductor epilayers

Nolte, D. D., Chen, N. P., Melloch, M. R., Montemagno, C., Haegel, N. M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 359 KB

english, 1996

12

Above band gap absorption spectra of the arsenic antisite defect in low temperature grown GaAs and AlGaAs

Dankowski, S. U., Streb, D., Ruff, M., Kiesel, P., Kneissl, M., Knüpfer, B., Döhler, G. H., Keil, U. D., So̸renson, C. B., Verma, A. K.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 319 KB

english, 1996

13

Electrical transport properties of [001] tilt bicrystal grain boundaries in YBa2Cu3O7

Steel, D. G., Hettinger, J. D., Yuan, F., Miller, D. J., Gray, K. E., Kang, J. H., Talvacchio, J.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 332 KB

english, 1996

14

Scanning tunneling microscopy of Si/SiO2 interface roughness and its dependence on growth conditions

Shekhawat, G. S., Gupta, Ram P., Shekhawat, S. S., Runthala, D. P., Vyas, P. D., Srivastava, P., Venkatesh, S., Mamhoud, K., Garg, K. B.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 511 KB

english, 1996

15

Observation of inverse reactive ion etching lag for silicon dioxide etching in inductively coupled plasmas

Doemling, M. F., Rueger, N. R., Oehrlein, G. S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 447 KB

english, 1996

16

Room-temperature negative differential resistance in AlAs/ErAs/AlAs heterostructures grown on (001)GaAs

Tanaka, M., Tsuda, M., Nishinaga, T., Palmstro̸m, C. J.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 770 KB

english, 1996

17

Strain-compensated InAsP/GaInP multiple quantum wells for 1.3 μm waveguide modulators

Mei, X. B., Loi, K. K., Wieder, H. H., Chang, W. S. C., Tu, C. W.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 330 KB

english, 1996

18

Laser-heated radiation dosimetry using transparent thermoluminescent glass

Justus, Brian L., Huston, Alan L., Johnson, Tommy L.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 296 KB

english, 1996

19

Dislocation formation mechanism in strained InxGa1−xAs islands grown on GaAs(001) substrates

Chen, Y., Lin, X. W., Liliental-Weber, Z., Washburn, J., Klem, J. F., Tsao, J. Y.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 907 KB

english, 1996

20

Electrical characterization of the β-FeSi2/Si heterojunction after thermal oxidation

Erlesand, U., Östling, M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 315 KB

english, 1996

21

Luminescence quenching in erbium-doped hydrogenated amorphous silicon

Shin, Jung H., Serna, R., van den Hoven, G. N., Polman, A., van Sark, W. G. J. H. M., Vredenberg, A. M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 325 KB

english, 1996

22

The energetics of {113} stacking fault formation in Si from supersaturated interstitials

Cuendet, Nicolas, Halicioglu, Timur, Tiller, William A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 363 KB

english, 1996

23

Hydrostatic pressure dependence of the photoluminescence of Si nanocrystals in SiO2

Cheong, Hyeonsik M., Paul, W., Withrow, S. P., Zhu, J. G., Budai, J. D., White, C. W., Hembree, D. M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 386 KB

english, 1996

24

Micromachined ultrasonic transducers: 11.4 MHz transmission in air and more

Ladabaum, Igal, Khuri-Yakub, B. T., Spoliansky, Dimitri

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 399 KB

english, 1996

25

The mechanism of iron gettering in boron-doped silicon

Stolk, P. A., Benton, J. L., Eaglesham, D. J., Jacobson, D. C., Cheng, J.-Y., Poate, J. M., Myers, S. M., Haynes, T. E.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 271 KB

english, 1996

26

Evolution of silicon surface morphology during H2 annealing in a rapid thermal chemical vapor deposition system

Wang, C. L., Unnikrishnan, S., Kim, B. Y., Kwong, D. L., Tasch, A. F.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 581 KB

english, 1996

27

Stark effect in individual luminescent centers observed by tunneling luminescence

Lindahl, J., Pistol, M.-E., Montelius, L., Samuelson, L.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 240 KB

english, 1996

28

Valence-band offset at the Si/GaP (110) interface

Lazzouni, M. E., Peressi, M., Baldereschi, A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 261 KB

english, 1996

29

PtIn2 ohmic contacts to n-GaAs via an In-Ga exchange mechanism

Chen, D. Y., Chang, Y. A., Swenson, D.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 254 KB

english, 1996

30

Evolution of the surface cross-hatch pattern in InxGa1−xAs/GaAs layers grown by metal-organic chemical vapor deposition

Yoon, Meeyoung, Lee, Bun, Baek, Jong-Hyeob, Park, Hyo-Hoon, Lee, El-Hang, Lee, Jeong Yong

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 505 KB

english, 1996

31

Photoluminescence studies of InAs/InGaAs/AlAs strained single quantum well structures

Shen, W. Z., Shen, S. C., Chang, Y., Tang, W. G., Lu, Y., Li, A. Z.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 269 KB

english, 1996

32

Low temperature selective silicon epitaxy by ultra high vacuum rapid thermal chemical vapor deposition using Si2H6, H2 and Cl2

Violette, Katherine E., O’Neil, Patricia A., Öztürk, Mehmet C., Christensen, Kim, Maher, Dennis M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 303 KB

english, 1996

33

White-beam synchrotron topographic characterization of flux-grown KTiOAsO4

Liu, W. J., Jiang, S. S., Huang, X. R., Hu, X. B., Ge, C. Z., Wang, J. Y., Jiang, J. H., Wang, Z. G.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 470 KB

english, 1996

34

Highly coercive Sm2Fe15Ga2C2 magnets made by intense ball milling

Cao, L., Handstein, A., Grünberger, W., Edelman, J., Schultz, L., Müller, K.-H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 325 KB

english, 1996

35

Investigation of the nucleation mechanism in bias-enhanced diamond deposition

Reinke, P., Kania, P., Oelhafen, P., Guggenheim, R.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 244 KB

english, 1996

36

Ion channeling studies of regrowth kinetics in crystalline metal oxides used with high temperature superconductors

Senapati, L., Sharma, R. P., Venkatesan, T., Zhang, Zuhua, Chu, Wei-Kan

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 251 KB

english, 1996

37

Investigations of vertical cavity surface emitting laser by photoreflectance spectroscopy

Berger, P. D., Bru, C., Benyattou, T., Guillot, G., Chenevas-Paule, A., Couturier, L., Grosse, P.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 255 KB

english, 1996

38

High resolution Fowler-Nordheim field emission maps of thin silicon oxide layers

Ruskell, Todd G., Workman, Richard K., Chen, Dong, Sarid, Dror, Dahl, Sarah, Gilbert, Stephen

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 390 KB

english, 1996

39

Direct comparison of GaAs surface morphology between migration enhanced epitaxy and molecular beam epitaxy using in situ scanning electron microscopy

Homma, Yoshikazu, Yamaguchi, Hiroshi, Horikoshi, Yoshiji

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 760 KB

english, 1996

40

Long-wavelength InAsSb photoconductors operated at near room temperatures (200–300 K)

Kim, J. D., Wu, D., Wojkowski, J., Piotrowski, J., Xu, J., Razeghi, M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 324 KB

english, 1996

41

Electron capture in GaAs quantum wells via electron-electron and optic phonon scattering

Kálna, K., Moško, M., Peeters, F. M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 379 KB

english, 1996

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