Volume 68; Issue 11

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Applied Physics Letters
Volume 68; Issue 11

Applied Physics Letters

Volume 68; Issue 11

1

Silicon interstitial trapping in polycrystalline silicon films studied by monitoring interstitial reactions with underlying insulating films

Tsoukalas, D., Kouvatsos, D.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 441 KB

english, 1996

2

Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition

Keller, S., Keller, B. P., Wu, Y.-F., Heying, B., Kapolnek, D., Speck, J. S., Mishra, U. K., DenBaars, S. P.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 263 KB

english, 1996

3

Control of process uniformity by using electron cyclotron resonance plasma produced by multiannular antenna

Yasaka, Yasuyoshi, Nakamura, Tomokazu

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 231 KB

english, 1996

4

Novel millimeter-wave near-field resistivity microscope

Golosovsky, Michael, Davidov, Dan

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 294 KB

english, 1996

5

The growth and properties of epitaxial KNbO3 thin films and KNbO3/KTaO3 superlattices

Christen, H.-M., Boatner, L. A., Budai, J. D., Chisholm, M. F., Géa, L. A., Marrero, P. J., Norton, D. P.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 410 KB

english, 1996

6

Sub-10 nm lithography with self-assembled monolayers

Lercel, M. J., Craighead, H. G., Parikh, A. N., Seshadri, K., Allara, D. L.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 531 KB

english, 1996

7

The deposition of SiOF film with low dielectric constant in a helicon plasma source

Kim, Jung-Hyung, Seo, Sang-Hun, Yun, Seok-Min, Chang, Hong-Young, Lee, Kwang-Man, Choi, Chi-Kyu

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 338 KB

english, 1996

8

Room-temperature photoenhanced wet etching of GaN

Minsky, M. S., White, M., Hu, E. L.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 429 KB

english, 1996

9

Fabrication of boron-carbide/boron heterojunction devices

Hwang, Seong-Don, Byun, Dongjin, Ianno, N. J., Dowben, P. A., Kim, H. R.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 303 KB

english, 1996

10

Optical investigations of the dynamic behavior of GaSb/GaAs quantum dots

Sun, C.-K., Wang, G., Bowers, J. E., Brar, B., Blank, H.-R., Kroemer, H., Pilkuhn, M. H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 305 KB

english, 1996

11

Crucial influences of K33/K11 ratio on viewing angle of display mode using a bend-alignment liquid-crystal cell with a compensator

Kuo, Chen-Lung, Miyashita, Tetsuya, Suzuki, Makoto, Uchida, Tatsuo

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 323 KB

english, 1996

12

On the fabrication of annealed proton exchanged waveguides with electric field poled domain reversals in Z-cut LiNbO3

Li, W. H., Tavlykaev, R., Ramaswamy, R. V., Samson, S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 371 KB

english, 1996

13

Direct measurement of the refractive index change of silicon with optically injected carriers

Yu, L. S., Liu, Q. Z., Guan, Z. F., Lau, S. S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 324 KB

english, 1996

14

Migration of a Si microcluster due to the electron wind on a Si(001) surface

Doi, Takahisa, Ichikawa, Masakazu, Hosoki, Shigeyuki, Ninomiya, Ken

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 359 KB

english, 1996

15

Integration of nonlinear optical polymer waveguides with InGaAs p-i-n photodiodes

Cites, Jeffrey S., Ashley, Paul R., Leavitt, Richard P.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 343 KB

english, 1996

16

In situ scanning tunneling microscopy of GaAs(001), (111)A, and (111)B surfaces in sulfuric acid solution

Yao, Hideki, Yau, Shueh-Lin, Itaya, Kingo

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 456 KB

english, 1996

17

Strain relaxation in Fe3(Al,Si)/GaAs: An x-ray scattering study

Noh, D. Y., Hwu, Y., Je, J. H., Hong, M., Mannáerts, J. P.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 372 KB

english, 1996

18

Photoconductive sampling with an integrated source follower/amplifier

Hwang, Jiunn-Ren, Cheng, Heng-Ju, Whitaker, John F., Rudd, James V.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 316 KB

english, 1996

19

Growth and in situ x-ray characterization of YBa2Cu3Ox/LaAlO3 superlattices

Williams, S. M., Maglic, S., Thomas, C., Lin, C. T., Wagoner, M. J., Chang, R. P. H., Ketterson, J. B.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 308 KB

english, 1996

20

New excimer-laser-crystallization method for producing large-grained and grain boundary-location-controlled Si films for thin film transistors

Kim, H. J., Im, James S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 586 KB

english, 1996

21

Quantitative analysis of radiation induced Si/SiO2 interface defects by means of MeV He single ion irradiation

Koh, Meishoku, Shigeta, Bungo, Igarashi, Kai, Matsukawa, Takashi, Tanii, Takashi, Mori, Shigetaka, Ohdomari, Iwao

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 391 KB

english, 1996

22

Phosphorus doping of Si and Si1−xGex grown by ultrahigh vacuum chemical vapor deposition using Si2H6 and GeH4

Chen, L. P., Huang, G. W., Chang, C. Y.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 328 KB

english, 1996

23

Recrystallization of high energy As-implanted GaAs studied by transmission electron microscopy

Jasinski, J., Chen, Y., Washburn, J., Liliental-Weber, Z., Tan, H. H., Jagadish, C., Kaminska, M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 950 KB

english, 1996

24

Corrugated quantum well infrared photodetectors for normal incident light coupling

Chen, C. J., Choi, K. K., Tidrow, M. Z., Tsui, D. C.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 251 KB

english, 1996

25

Azimuthal rotation of diamond crystals epitaxially nucleated on silicon {001}

Tachibana, T., Hayashi, K., Kobashi, K.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 318 KB

english, 1996

26

c-axis oriented ferroelectric thin films of PbTiO3 on Si by pulsed laser ablation

Palkar, V. R., Purandare, S. C., Pai, S. P., Chattopadhyay, S., Apte, P. R., Pinto, R., Multani, M. S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 379 KB

english, 1996

27

Planar native-oxide-based AlGaAs-GaAs-InGaAs quantum well microdisk lasers

Ries, M. J., Chen, E. I., Holonyak, N., Iovino, G. M., Minervini, A. D.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 288 KB

english, 1996

28

Growth of Nd3+-doped LiNbO3 optical superlattice crystals and its potential applications in self-frequency doubling

Lu, Ya-lin, Lu, Yan-qing, Xue, Cheng-cheng, Ming, Nai-ben

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 315 KB

english, 1996

29

Large bandwidth and low noise in a diffusion-cooled hot-electron bolometer mixer

Skalare, A., McGrath, W. R., Bumble, B., LeDuc, H. G., Burke, P. J., Verheijen, A. A., Schoelkopf, R. J., Prober, D. E.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 355 KB

english, 1996

30

Observation of the transverse second-harmonic magneto-optic Kerr effect from Ni81Fe19 thin film structures

Crawford, T. M., Rogers, C. T., Silva, T. J., Kim, Y. K.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 265 KB

english, 1996

31

Magnetothermopower in La0.67Ca0.33MnO3 thin films

Jaime, M., Salamon, M. B., Pettit, K., Rubinstein, M., Treece, R. E., Horwitz, J. S., Chrisey, D. B.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 291 KB

english, 1996

32

Transit-time effect on electronic noise in submicron n +nn+ structures

Shiktorov, P., Gruz̆inskis, V., Starikov, E., Reggiani, L., Varani, L.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 279 KB

english, 1996

33

Low temperature scanning electron microscopy study of YBa2Cu3O7−δ multilayer dc SQUID magnetometers

Gerber, R., Koelle, D., Gross, R., Huebener, R. P., Ludwig, F., Dantsker, E., Kleiner, R., Clarke, John

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 475 KB

english, 1996

34

Complete p-type activation in vertical-gradient freeze GaAs co-implanted with gallium and carbon

Horng, S. T., Goorsky, M. S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 244 KB

english, 1996

35

Mixed-mode twisted nematic liquid crystal cells for reflective displays

Wu, Shin-Tson, Wu, Chiung-Sheng

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 265 KB

english, 1996

36

Anisotropic self-field effect in a-axis YBa2Cu3O7−x/Ag/PbIn Josephson junctions

Takeuchi, I., Lobb, C. J., Trajanovic, Z., Warburton, P. A., Venkatesan, T.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 330 KB

english, 1996

37

Resonant Raman scattering from phonons in GaAs/(GaAs)m(AlAs)n quantum wire structures

Maciel, A. C., Freyland, J. M., Rota, L., Kiener, C., Ryan, J. F., Marti, U., Martin, D., Morier-Gemoud, F., Reinhart, F. K.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 305 KB

english, 1996

38

InAs monolayers and the controlled introduction of deep levels in AlGaAs alloys

Colombelli, Raffaele, Jancu, Jean-Marc, Beltram, Fabio, Sorba, Lucia, Bertho, Denis, Jouanin, Christian

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 258 KB

english, 1996

39

Infrared Raman scattering as a sensitive probe for the thermal conductivity of chemical vapor deposited diamond films

Wörner, E., Wagner, J., Müller-Sebert, W., Wild, C., Koidl, P.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 254 KB

english, 1996

40

Degenerate-four-wave-mixing of fullerene doped inorganic glass

Liu, Huimin, Taheri, Bahmam, Jia, Weiyi, Lin, Fucheng, Mao, Sen

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 281 KB

english, 1996

41

High critical current densities in Nb47%Ti multilayers with a planar copper flux pinning nanostructure

Kadyrov, E., Gurevich, A., Larbalestier, D. C.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 289 KB

english, 1996

42

Kinetic modeling of microscopic processes during electron cyclotron resonance microwave plasma-assisted molecular beam epitaxial growth of GaN/GaAs-based heterostructures

Bandić, Z. Z., Hauenstein, R. J., O’Steen, M. L., McGill, T. C.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 249 KB

english, 1996

43

Observation of population inversion in recombining Al plasma by time- and space-resolved x-ray spectroscopy

Katsuragawa, M., Itatani, J., Orimo, S., Ozaki, T., Kuroda, H., Sasaki, A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 325 KB

english, 1996

44

Migration of compensating defects in p-type ZnSe during annealing

Chen, Anthony L., Walukiewicz, Wladek, Duxstad, Kristin, Haller, Eugene E.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 315 KB

english, 1996

45

Fine structure in 1.4 eV luminescence band from plasma deposited amorphous silicon layers on silicon substrates

Rao, K. S. R. K., Sreedhar, A. K., Bhat, H. L., Singh, R. A., Dubey, G. C., Kumar, Vikram

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 305 KB

english, 1996

46

All-optical switching by spatial walkoff compensation and solitary-wave locking

Torruellas, William E., Assanto, Gaetano, Lawrence, Brian L., Fuerst, Russell A., Stegeman, George I.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 335 KB

english, 1996

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