Volume 68; Issue 17

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Applied Physics Letters
Volume 68; Issue 17

Applied Physics Letters

Volume 68; Issue 17

1

Ion-beam synthesis and stability of GaAs nanocrystals in silicon

White, C. W., Budai, J. D., Zhu, J. G., Withrow, S. P., Aziz, M. J.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 412 KB

english, 1996

2

Transparent zinc oxide films prepared by electrochemical reaction

Izaki, Masanobu, Omi, Takashi

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 483 KB

english, 1996

3

Resonant Raman scattering in hexagonal GaN

Behr, D., Wagner, J., Schneider, J., Amano, H., Akasaki, I.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 363 KB

english, 1996

4

Electron-emission-enhanced diamond nucleation on Si by hot filament chemical vapor deposition

Chen, Qijin, Lin, Zhangda

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 352 KB

english, 1996

5

Quasi-one-dimensional CaF2 islands formed on Si(001) by molecular beam epitaxy

Loretto, D., Ross, F. M., Lucas, C. A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 547 KB

english, 1996

6

Cathodoluminescence and writing of optical patterns on porous silicon by scanning electron microscopy

Bruska, A., Chernook, A., Schulze, St., Hietschold, M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 668 KB

english, 1996

7

Strain relaxation mechanism of 250 °C grown Si0.33Ge0.67/Si(001) heterostructure

Lee, Seung-Chang

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 573 KB

english, 1996

8

New method for in situ control of Bragg reflector fabrication

Callard, S., Gagnaire, A., Joseph, J.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 302 KB

english, 1996

9

The effect of stress on the resistivity of submicron aluminum lines

Beverly, N. L., Alers, G. B., Prybyla, J. A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 338 KB

english, 1996

10

Analysis of capacitance-voltage characteristics for two-dimensional multi-conductor in liquid crystal displays

Lin, Kun-Wei, Shieh, Han-Ping D., Su, Feng-Cheng D.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 372 KB

english, 1996

11

Biaxial alignment of TiN films prepared by ion beam assisted deposition

Gerlach, J. W., Preckwinkel, U., Wengenmair, H., Kraus, T., Rauschenbach, B.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 324 KB

english, 1996

12

The intrinsic determinants of the critical current in SISʹ and SIS high-Tc Josephson junctions

Gonnelli, R. S., Puttero, D., Ummarino, G. A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 360 KB

english, 1996

13

Polyquinoxaline as an excellent electron injecting material for electroluminescent device

Fukuda, Takashi, Kanbara, Takaki, Yamamoto, Takakazu, Ishikawa, Ken, Takezoe, Hideo, Fukuda, Atsuo

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 321 KB

english, 1996

14

Local field in ferroelectrics: Direct measurements with an optical probe

Blinov, L. M., Verkhovskaya, K. A., Palto, S. P., Sorokin, A. V.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 331 KB

english, 1996

15

Role of heterointerface on enhancement of no-phonon luminescence in Si-based neighboring confinement structure

Usami, N., Shiraki, Y., Fukatsu, S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 324 KB

english, 1996

16

Shallow donor neutralization in CdTe:In by atomic hydrogen

Gurumurthy, Suma, Bhat, H. L., Sundersheshu, B., Bagai, R. K., Kumar, Vikram

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 327 KB

english, 1996

17

ZnSe-based birefringent waveguide as Pockels retarder in the blue-green spectral range

Babucke, H., Thiele, P., Prasse, T., Rabe, M., Henneberger, F.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 323 KB

english, 1996

18

Deposition and extensive light soaking of highly pure hydrogenated amorphous silicon

Kamei, Toshihiro, Hata, Nobuhiro, Matsuda, Akihisa, Uchiyama, Toyoshi, Amano, Shigeru, Tsukamoto, Kazuyoshi, Yoshioka, Yoshiaki, Hirao, Takashi

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 319 KB

english, 1996

19

The shape of a nanoprobe determined by imaging spherical clusters

Sumetskii, M., Kornyshev, A. A., Stimming, U.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 291 KB

english, 1996

20

Vanishing optical isolation barrier in double ion-implanted lithium niobate waveguide

Sarkisov, S. S., Williams, E. K., Ila, D., Venkateswarlu, P., Poker, D. B.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 246 KB

english, 1996

21

Electrical characterization of Mg-doped GaN grown by metalorganic vapor phase epitaxy

Huang, J. W., Kuech, T. F., Lu, Hongqiang, Bhat, Ishwara

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 265 KB

english, 1996

22

Direct scanning tunneling microscopy observation of non-unit-cell growth of YBa2Cu3O7−δ thin films

Haage, T., Jiang, Q. D., Cardona, M., Habermeier, H.-U., Zegenhagen, J.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 522 KB

english, 1996

23

Effects of interfacial chemistry on the formation of interfacial layers and faulted defects in ZnSe/GaAs

Kuo, L. H., Kimura, K., Yasuda, T., Miwa, S., Jin, C. G., Tanaka, K., Yao, T.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 621 KB

english, 1996

24

Large energy shifts in GaAs-AlGaAs quantum wells by proton irradiation-induced intermixing

Tan, H. H., Williams, J. S., Jagadish, C., Burke, P. T., Gal, M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 248 KB

english, 1996

25

Near-infrared contact mode collection near-field optical and normal force microscopy of modulated multiple quantum well lasers

Ben-Ami, U., Tessler, N., Ben-Ami, N., Nagar, R., Fish, G., Lieberman, K., Eisenstein, G., Lewis, A., Nielsen, J. M., Mo̸eller-Larsen, A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 351 KB

english, 1996

26

Dry oxidation mechanisms of thin dielectric films formed under N2O using isotopic tracing methods

Ganem, J.-J., Rigo, S., Trimaille, I., Baumvol, I. J. R., Stedile, F. C.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 264 KB

english, 1996

27

Voltage-tunable-color multilayer organic light emitting diode

Kalinowski, J., Di Marco, P., Cocchi, M., Fattori, V., Camaioni, N., Duff, J.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 262 KB

english, 1996

28

Simulation of cluster evaporation and transient enhanced diffusion in silicon

Rafferty, C. S., Gilmer, G. H., Jaraiz, M., Eaglesham, D., Gossmann, H.-J.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 266 KB

english, 1996

29

Molecular beam epitaxy growth of a layered cuprate having a multiple fluorite-type block for use in trilayer junctions

Ikegawa, Sumio, Motoi, Yuichi

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 347 KB

english, 1996

30

Charge-free etching process using positive and negative ions in pulse-time modulated electron cyclotron resonance plasma with low-frequency bias

Ohtake, Hiroto, Samukawa, Seiji

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 232 KB

english, 1996

31

Polarization effect in light emitting diodes with ordered GaInP active layers

Greger, E., Gulden, K. H., Riel, P., Schweizer, H. P., Moser, M., Schmiedel, G., Kiesel, P., Döhler, G. H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 276 KB

english, 1996

32

Waveguiding in (quantum) wire structures: Impact on the polarization characteristics and the slope of the optical gain

Lehr, G., Härle, V., Scholz, F., Schweizer, H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 238 KB

english, 1996

33

Synthesis and characterization of heteroepitaxial diamond-structured Ge1−xCx (x=1.5–5.0%) alloys using chemical vapor deposition

Todd, M., Kouvetakis, J., Smith, David J.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 662 KB

english, 1996

34

Resistless, area-selective ultrashallow P+/N junction fabrication using projection gas immersion laser doping

Kramer, K.-Josef, Talwar, Somit, Lewis, Isabella T., Davison, John E., Williams, Kenneth A., Benton, Keith A., Weiner, Kurt H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 330 KB

english, 1996

35

Measurement of index of refraction of InxAl1−xAs epitaxial layer using in situ laser reflectometry

Baek, Jong-Hyeob, Lee, Bun, Choi, Sung Woo, Lee, Jin Hong, Lee, El-Hang

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 265 KB

english, 1996

36

Surface modification of silicon (111) by annealing at high temperature in hydrogen

Zhong, Lei, Takeda, Ryuji, Izunome, Koji, Matsushita, Yoshiaki, Aiba, Yoshiro, Matsushita, Junichi, Yoshikawa, Jun, Hayashi, Kenro, Shirai, Hiroshi, Saito, Hiroyoki

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 323 KB

english, 1996

37

Room-temperature, short-wavelength (400–500 nm) photoluminescence from silicon-implanted silicon dioxide films

Skorupa, W., Yankov, R. A., Tyschenko, I. E., Fröb, H., Böhme, T., Leo, K.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 307 KB

english, 1996

38

Incorporation of hydrogen in nitrogen and arsenic doped ZnSe epitaxial layers grown by organometallic vapor phase epitaxy

Bourret-Courchesne, Edith D.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 298 KB

english, 1996

39

Observation of temperature-insensitive emission wavelength in GaInAs strained multiple-quantum-wire heterostructures

Wohlert, D. E., Chou, S. T., Chen, A. C., Cheng, K. Y., Hsieh, K. C.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 330 KB

english, 1996

40

Heat diffusivity of La1−xCaxMnO3 epitaxial layers

Liebe, J., Kraus, E., Haupt, L., Mandal, P., Bärner, K., Helmolt, R. v.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 337 KB

english, 1996

41

Conductive thin films of bis(ethylenedithio)tetrathiafulvalene salt fabricated by a successive dry-wet process

Miura, Yasuhiro F., Ohnishi, Satomi, Hara, Masahiko, Sasabe, Hiroyuki, Knoll, Wolfgang

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 477 KB

english, 1996

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