Volume 68; Issue 22

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Applied Physics Letters
Volume 68; Issue 22

Applied Physics Letters

Volume 68; Issue 22

1

Exciton diffusion and dissociation in a poly(p‐phenylenevinylene)/C60 heterojunction photovoltaic cell

Halls, J. J. M., Pichler, K., Friend, R. H., Moratti, S. C., Holmes, A. B.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 309 KB

english, 1996

2

Highly efficient band‐edge emission from InP quantum dots

Micic, Olga I., Sprague, Julian, Lu, Zhenghao, Nozik, Arthur J.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 368 KB

english, 1996

3

Activation energies of Si donors in GaN

GoÌtz, W., Johnson, N. M., Chen, C., Liu, H., Kuo, C., Imler, W.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 388 KB

english, 1996

4

Band-edge photoluminescence from pseudomorphic Si0.96Sn0.04 alloy

Khan, Al-Sameen T., Berger, Paul R., Guarin, Fernando J., Iyer, Subramanian S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 367 KB

english, 1996

5

Oxidation of GaAs/AlGaAs heterostructures studied by atomic force microscopy in air

Reinhardt, F., Dwir, B., Kapon, E.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 1.38 MB

english, 1996

6

Mechanism for the anomalous degradation of Si solar cells induced by high fluence 1 MeV electron irradiation

Yamaguchi, Masafumi, Taylor, Stephen J., Matsuda, Sumio, Kawasaki, Osamu

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 392 KB

english, 1996

7

Link-up of 90° domain boundaries with interface dislocations in BaTiO3/LaAlO3

Dai, Z. R., Wang, Z. L., Duan, X. F., Zhang, Jiming

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 802 KB

english, 1996

8

Growth and characterization of bulk InGaN films and quantum wells

Keller, S., Keller, B. P., Kapolnek, D., Abare, A. C., Masui, H., Coldren, L. A., Mishra, U. K., Den Baars, S. P.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 277 KB

english, 1996

9

Optical switching of coherent VO2 precipitates formed in sapphire by ion implantation and annealing

Gea, Laurence A., Boatner, L. A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 308 KB

english, 1996

10

Double acceptor doped Ge: A new medium for inter-valence-band lasers

Bründermann, E., Linhart, A. M., Reichertz, L., Röser, H. P., Dubon, O. D., Hansen, W. L., Sirmain, G., Haller, E. E.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 302 KB

english, 1996

11

A pulse-driven programmable Josephson voltage standard

Benz, S. P., Hamilton, C. A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 344 KB

english, 1996

12

Size classification of silicon nanocrystals

Camata, Renato P., Atwater, Harry A., Vahala, Kerry J., Flagan, Richard C.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 556 KB

english, 1996

13

Highly sensitive and wideband optical detection in patterned YBa2Cu3O7−δ thin films

Tanaka, Ken’ichi, Arikawa, Yoshiro, Sekine, Matsuo, Ohtsu, Motoichi, Harada, Yuichi, Danerud, Martin

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 343 KB

english, 1996

14

Polymer and polymer/metal interface characterization via Fowler–Nordheim tunneling measurements

Hümmelgen, I. A., Roman, L. S., Nart, F. C., Péres, L. O., de Sá, E. L.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 324 KB

english, 1996

15

Magnetic properties and giant magnetoresistance in La0.67Ca0.33MnOx bulk material

Zhang, X. X., Yu, R. H., Tejada, J., Sun, G. F., Xin, Y., Wong, K. W.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 343 KB

english, 1996

16

Ferromagnetism above room temperature in Mn–Si–C alloy films

Gajdzik, M., Sürgers, C., Kelemen, M., Hillebrands, B., Löhneysen, H. v.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 308 KB

english, 1996

17

Processing of highly oriented (Hg1−xRex)Ba2Ca2Cu3O8+δ tape with x∼0.1

Meng, R. L., Hickey, B., Wang, Y. Q., Sun, Y. Y., Gao, L., Xue, Y. Y., Chu, C. W.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 617 KB

english, 1996

18

Potential chirp-free characteristics (negative chirp parameter) in electroabsorption modulation using a wide tensile-strained quantum well structure

Yamanaka, Takayuki, Wakita, Koichi, Yokoyama, Kiyoyuki

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 368 KB

english, 1996

19

InAs quantum boxes: Highly efficient radiative traps for light emitting devices on Si

Gérard, J. M., Cabrol, O., Sermage, B.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 313 KB

english, 1996

20

Comment on ‘‘Vertical-cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature’’ [Appl. Phys. Lett. 65, 520 (1994)]

Bagnall, D. M., O’Donnell, K. P.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 539 KB

english, 1996

21

Compaction- and photoelastic-induced index changes in fiber Bragg gratings

Limberger, H. G., Fonjallaz, P.-Y., Salathé, R. P., Cochet, F.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 334 KB

english, 1996

22

Determination of the activation energy ɛ3 for impurity conduction in n-type 4H–SiC

Evwaraye, A. O., Smith, S. R., Mitchel, W. C., Roth, M. D.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 338 KB

english, 1996

23

Dielectric function of biaxially strained silicon layer

Lee, Hosun, Jones, E. D.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 335 KB

english, 1996

24

Magnetic properties of melt-textured YBa2Cu3O7 prepared in a solar furnace

Reich, S., Godin, T.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 335 KB

english, 1996

25

Ion implantation-induced strong photosensitivity in high-purity fused silica: Correlation of index changes with VUV color centers

Verhaegen, M., Brebner, J. L., Allard, L. B., Albert, J.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 250 KB

english, 1996

26

Faraday rotation of Hoya FR5 glass at cryogenic temperature

Lee, Hyeon Gon, Won, Y. H., Lee, G. S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 342 KB

english, 1996

27

Change in bulk defect density of hydrogenated amorphous silicon by bias stress in thin film transistor structures

Park, Hyuk-Ryeol, Oh, Dong-Sun, Jang, Jin

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 245 KB

english, 1996

28

Chemical beam epitaxial growth of Si-doped GaAs and InP by using silicon tetraiodide

Izumi, Shigekazu, Hayafuji, Norio, Ito, Kazuhiko, Sato, Kazuhiko, Otsubo, Mutsuyuki

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 260 KB

english, 1996

29

Evolution of the crystallographic position of As impurities in heavily doped Si crystals as their electrical activity changes

Herrera-Gómez, A., Rousseau, P. M., Materlik, G., Kendelewicz, T., Woicik, J. C., Griffin, P. B., Plummer, J., Spicer, W. E.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 248 KB

english, 1996

30

Large exchange bias and its connection to interface structure in FeF2–Fe bilayers

Nogués, J., Lederman, D., Moran, T. J., Schuller, Ivan K., Rao, K. V.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 289 KB

english, 1996

31

Low frequency noise in two-dimensional metal-semiconductor field effect transistor

Levinshtein, M. E., Rumyantsev, S.-L., Simin, G. S., Park, H., Peatman, W. C. B., Shur, M. S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 265 KB

english, 1996

32

Wet thermal oxidation of AlAsSb lattice matched to InP for optoelectronic applications

Blum, O., Geib, K. M., Hafich, M. J., Klem, J. F., Ashby, C. I. H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 423 KB

english, 1996

33

Extraction of real-space correlation function of a rough surface by light scattering using diode array detectors

Zhao, Y. P., Yang, H.-N., Wang, G.-C., Lu, T.-M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 571 KB

english, 1996

34

Amorphous films formed by solid-state reaction in an immiscible Y–Mo system and their structural relaxation

Chen, Y. G., Liu, B. X.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 238 KB

english, 1996

35

Pulsed supersonic jet epitaxy: A nonthermal approach to silicon growth

Malik, Rajeev, Gulari, Erdogan

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 331 KB

english, 1996

36

Using doping superlattices to study transient-enhanced diffusion of boron in regrown silicon

Jones, K. S., Elliman, R. G., Petravić, M. M., Kringho̸j, P.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 265 KB

english, 1996

37

Discrete voltage states in one-dimensional parallel array of Josephson junctions

Braiman, Y., Family, F., Hentschel, H. G. E.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 275 KB

english, 1996

38

Spurious momentum mismatch introduced by an approximate model of acousto-optic interactions

Wu, Yih-Tyng, Anderson, Betty Lise

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 266 KB

english, 1996

39

Metallic particle sizing on flat surfaces: Application to conducting substrates

Moreno, F., Saiz, J. M., Valle, P. J., González, F.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 275 KB

english, 1996

40

Response to ‘‘Comment on ‘Vertical-cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature’ ’’ [Appl. Phys. Lett. 68, 3197 (1996)]

Asif Khan, M., Krishnankutty, S., Skogman, R. A., Kuznia, J. N., Olson, D. T., George, T.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 271 KB

english, 1996

41

Bias current dependent resistance peaks in NiFe/Ag giant magnetoresistance multilayers

Kirschenbaum, L. S., Rogers, C. T., Beale, P. D., Russek, S. E., Sanders, S. C.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 356 KB

english, 1996

42

Transport characterization of in-plane gate devices fabricated by direct epitaxial growth on patterned substrates

Dilger, M., Haug, R. J., Eberl, K., Kurtenbach, A., Kershaw, Y., Klitzing, K. v.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 803 KB

english, 1996

43

Single-crystal Si islands on SiO2 obtained via excimer-laser irradiation of a patterned Si film

Song, H. Jin, Im, James S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 544 KB

english, 1996

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