Volume 68; Issue 23

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Applied Physics Letters
Volume 68; Issue 23

Applied Physics Letters

Volume 68; Issue 23

1

Growth and properties of scandium epitaxial films on GaN

Kaplan, R., Prokes, S. M., Binari, S. C., Kelner, G.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 313 KB

english, 1996

2

Characterization of diffusion length degradation in Czochralski silicon solar cells

Reiss, J. H., King, R. R., Mitchell, K. W.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 375 KB

english, 1996

3

Electron and hole transport in poly(p-phenylene vinylene) devices

Blom, P. W. M., de Jong, M. J. M., Vleggaar, J. J. M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 291 KB

english, 1996

4

Characteristics of InGaN multi-quantum-well-structure laser diodes

Nakamura, Shuji, Senoh, Masayuki, Nagahama, Shin-ichi, Iwasa, Naruhito, Yamada, Takao, Matsushita, Toshio, Kiyoku, Hiroyuki, Sugimoto, Yasunobu

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 271 KB

english, 1996

5

Encapsulation of Ag films on SiO2 by Ti reactions using AgâTi alloy/bilayer structures and an NH3 ambient

Alford, T. L., Adams, Daniel, Laursen, T., Manfred Ullrich, B.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 387 KB

english, 1996

6

Dynamic range of an electro-optic field sensor and its imaging applications

Wu, Q., Sun, F. G., Campbell, P., Zhang, X.-C.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 289 KB

english, 1996

7

Self-organization processes of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

Heinrichsdorff, F., Krost, A., Grundmann, M., Bimberg, D., Kosogov, A., Werner, P.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 449 KB

english, 1996

8

Optical spectroscopic observation of spontaneous long range ordering in AlGaInP

Kowalski, O. P., Wegerer, R. M., Mowbray, D. J., Skolnick, M. S., Button, C. C., Roberts, J. S., Hopkinson, M., David, J. P. R., Hill, G.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 278 KB

english, 1996

9

Length scaling of bandwidth and noise in hot-electron superconducting mixers

Burke, P. J., Schoelkopf, R. J., Prober, D. E., Skalare, A., McGrath, W. R., Bumble, B., LeDuc, H. G.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 330 KB

english, 1996

10

In situ, atomic force microscope studies of the evolution of InAs three-dimensional islands on GaAs(001)

Kobayashi, N. P., Ramachandran, T. R., Chen, P., Madhukar, A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 440 KB

english, 1996

11

Nonlinear optical response of As+-ion implanted GaAs studied using time resolved reflectivity

Janz, S., Akano, Usman G., Mitchell, Ian V.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 341 KB

english, 1996

12

Epitaxial layer thickness measurement by cross-sectional atomic force microscopy

Howard, A. J., Blum, O., Chui, H., Baca, A. G., Crawford, M. H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 420 KB

english, 1996

13

Atomic layer controlled deposition of silicon nitride with self-limiting mechanism

Goto, Hiroshi, Shibahara, Kentaro, Yokoyama, Shin

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 397 KB

english, 1996

14

Efficient, fast response light-emitting electrochemical cells: Electroluminescent and solid electrolyte polymers with interpenetrating network morphology

Cao, Yong, Yu, Gang, Heeger, Alan J., Yang, C. Y.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 361 KB

english, 1996

15

Computed light scattering cross sections of oxide particles in silicon

Laczik, Z., Booker, G. R.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 791 KB

english, 1996

16

Characterization of diamond deposition from chloromethane reactants by laser reflective interferometry

Wu, Jih-Jen, Yeh, Shih-Hsien, Su, Chin-Ta, Hong, Franklin Chau-Nan

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 299 KB

english, 1996

17

Effects of laser-ablation target damage on particulate production investigated by laser scattering with deposited thin film and target analysis

Spindler, H. L., Gilgenbach, R. M., Lash, J. S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 606 KB

english, 1996

18

Large-area double-side pulsed laser deposition of YBa2Cu3O7−x thin films on 3-in. sapphire wafers

Lorenz, M., Hochmuth, H., Natusch, D., Börner, H., Lippold, G., Kreher, K., Schmitz, W.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 1.54 MB

english, 1996

19

Preferential alignment of Er–2O centers in GaAs:Er,O revealed by anisotropic host-excited photoluminescence

Hogg, R. A., Takahei, K., Taguchi, A., Horikoshi, Y.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 352 KB

english, 1996

20

Time-resolved photoluminescence study on AlxGa1−xAs spontaneous vertical quantum well structures

Usami, Noritaka, Pan, Wugen, Yaguchi, Hiroyuki, Ito, Ryoichi, Onabe, Kentaro, Akiyama, Hidefumi, Shiraki, Yasuhiro

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 333 KB

english, 1996

21

Observation of negative differential resistance phenomenon in a two-step barrier diode

Wang, S. J., Lin, J. C., Liou, W. R., Luo, Y. C., Cheng, C. Y.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 470 KB

english, 1996

22

Compressibility studies of double electron and double hole gas systems

Millard, I. S., Patel, N. K., Simmons, M. Y., Linfield, E. H., Ritchie, D. A., Jones, G. A. C., Pepper, M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 271 KB

english, 1996

23

Crystalline quality and phase stability of hexagonal GdSi1.7 layers formed by channeled ion-beam synthesis

Wu, M. F., Vantomme, A., Pattyn, H., Langouche, G., Bender, H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 406 KB

english, 1996

24

Direct observation of vibrational modes in Hg1−xCdxTe

Li, Biao, Chu, J. H., Ye, H. J., Guo, S. P., Jiang, W., Tang, D. Y.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 260 KB

english, 1996

25

CaF2:Er3+ molecular beam epitaxial layers as optical waveguides

Bausá, L. E., Lifante, G., Daran, E., Pernas, P. L.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 268 KB

english, 1996

26

Identification of Cr in p-type silicon using the minority carrier lifetime measurement by the surface photovoltage method

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 268 KB

english, 1996

27

Far infrared video detection and difference frequency mixing with tilted c-axis epitaxial YBa2Cu3O7−δ thin films

Huber, W. M., Berr, M., Kalbeck, A., Prettl, W., Huggard, P. G.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 258 KB

english, 1996

28

Influence of surface morphology on ordered GaInP structures

Nasi, L., Salviati, G., Mazzer, M., Zanotti-Fregonara, C.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 614 KB

english, 1996

29

Broadening of interband resonances in thin AlAs barriers embedded in GaAs

Weimar, U., Wagner, J., Gaymann, A., Köhler, K.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 263 KB

english, 1996

30

Mark observation of TbFeCo recorded on land/groove substrate by spin-polarized scanning electron microscopy

Kohashi, Teruo, Matsuyama, Hideo, Haginoya, Chiseki, Koike, Kazuyuki, Miyamoto, Harukazu, Ushiyama, Junko

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 372 KB

english, 1996

31

Visualization of current filaments in n-GaAs by photoluminescence quenching

Eberle, W., Hirschinger, J., Margull, U., Prettl, W., Novák, V., Kostial, H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 1.44 MB

english, 1996

32

Photonic band gap quantum well and quantum box structures: A high-Q resonant cavity

Lin, Shawn-Yu, Hietala, V. M., Lyo, S. K., Zaslavsky, A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 265 KB

english, 1996

33

Femtosecond dephasing in porous silicon

Tomasiunas, R., Moniatte, J., Pelant, I., Gilliot, P., Hönerlage, B.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 281 KB

english, 1996

34

Se species in metalorganic molecular beam epitaxy of ZnSe

Qiu, Y., El-Emawy, A. A., Osinsky, A., Littlefield, E., Temkin, H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 256 KB

english, 1996

35

Large non-biased all-optical bistability in an electroabsorption modulator using p-i-n-i-p diode and asymmetric Fabry–Perot cavity structure

Kwon, O. K., Kim, K., Hyun, K. S., Baek, J. H., Lee, B., Lee, E. H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 315 KB

english, 1996

36

Generation and detection of transverse ultrasonic waves via vortex tilting in superconductive YBa2Cu3O7

Haneda, H., Ishiguro, T., Murakami, M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 285 KB

english, 1996

37

Time resolved four-wave mixing technique to measure the ultrafast coherent dynamics in semiconductor optical amplifiers

Hofmann, M., Brorson, S. D., Mo̸rk, J., Mecozzi, A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 314 KB

english, 1996

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