Volume 68; Issue 24

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Applied Physics Letters
Volume 68; Issue 24

Applied Physics Letters

Volume 68; Issue 24

1

ZnCdSe/ZnCdMgSe quantum wells on InP substrates for visible emitters

Cavus, A., Zeng, L., Tamargo, M. C., Bambha, N., Semendy, F., Gray, A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 296 KB

english, 1996

2

Enhancing the low field magnetoresistive response in perovskite manganites

Hwang, H. Y., Cheong, S.‐W., Batlogg, B.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 287 KB

english, 1996

3

Si and Si/P implants in In0.5Ga0.5P and In0.5Al0.5P

Zolper, J. C., Chui, H. C.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 375 KB

english, 1996

4

Synthesis of single domain strontium ferrite powder by pulsed laser ablation

Nawathey-Dikshit, Rashmi, Shinde, S. R., Ogale, S. B., Kulkarni, S. D., Sainkar, S. R., Date, S. K.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 534 KB

english, 1996

5

Unambiguous photoreflectance determination of electric fields using phase suppression

Tyan, S. L., Wang, Y. C., Hwang, J. S., Shen, H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 307 KB

english, 1996

6

Room-temperature migration and interaction of ion beam generated defects in crystalline silicon

Privitera, Vittorio, Coffa, Salvatore, Priolo, Francesco, Larsen, Kim Kyllesbech, Mannino, Giovanni

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 295 KB

english, 1996

7

Dosimetric properties of KCl:Eu2+ under α, β, γ, x ray, and ultraviolet irradiation

Meléndrez, R., Pérez-Salas, R., Pashchenko, L. P., Aceves, R., Piters, T. M., Barboza-Flores, M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 260 KB

english, 1996

8

Laser irradiation effects on tunneling properties of n-type GaAs and InAs by scanning tunneling microscopy

Takahashi, Takuji, Yoshita, Masahiro

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 315 KB

english, 1996

9

Band line-up transition in AlxGa1−xAs/In0.5Ga0.5P from capacitance-voltage analysis

Kim, Il-Jong, Cho, Yong-Hoon, Kim, Kwan-Shik, Choe, Byung-Doo, Lim, H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 327 KB

english, 1996

10

Oxide mediated epitaxy of CoSi2 on silicon

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 682 KB

english, 1996

11

In situ infrared spectroscopy as a real time diagnostic for plasma polymer film deposition

Pan, Y. Vickie, Barrios, Ernesto Z., Denton, Denice D.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 315 KB

english, 1996

12

Scanning tip microwave near-field microscope

Wei, T., Xiang, X.-D., Wallace-Freedman, W. G., Schultz, P. G.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 517 KB

english, 1996

13

Vibrational spectroscopy of arsenic-hydrogen complexes in ZnSe

McCluskey, M. D., Haller, E. E., Zach, F. X., Bourret-Courchesne, E. D.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 340 KB

english, 1996

14

Layer-by-layer atomic manipulation on Si(111)-7×7 surface

Komeda, T., Hasunuma, R., Mukaida, H., Tokumoto, H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 411 KB

english, 1996

15

Free-standing versus AlAs-embedded GaAs quantum dots, wires, and films: The emergence of a zero-confinement state

Franceschetti, Alberto, Zunger, Alex

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 399 KB

english, 1996

16

On the impact of interface energy and vacancy concentration on morphology changes and nucleation of silicon oxide precipitates in silicon

Vanhellemont, Jan

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 329 KB

english, 1996

17

High-resolution imaging using near-field scanning optical microscopy and shear force feedback in water

Moyer, Patrick J., Kämmer, Stefan B.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 3.08 MB

english, 1996

18

Detection of single macromolecules using a cryogenic particle detector coupled to a biopolymer mass spectrometer

Twerenbold, Damian, Vuilleumier, Jean-Luc, Gerber, Daniel, Tadsen, Almut, van den Brandt, Ben, Gillevet, Patrick M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 323 KB

english, 1996

19

Real time control of plasma deposited multilayers by multiwavelength ellipsometry

Kildemo, M., Bulkin, P., Deniau, S., Drévillon, B.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 346 KB

english, 1996

20

High quality Al(Ga)As/GaAs/Al(Ga)As quantum wells grown on (111)A GaAs substrates

Chin, Albert, Lee, K.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 303 KB

english, 1996

21

A distance regulation scheme for scanning near-field optical microscopy

Dräbenstedt, A., Wrachtrup, J., von Borczyskowski, C.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 363 KB

english, 1996

22

Deep level defects in Mg-doped, p-type GaN grown by metalorganic chemical vapor deposition

Götz, W., Johnson, N. M., Bour, D. P.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 314 KB

english, 1996

23

Polarization-dependent extended x-ray absorption fine structure measurements of metastable fcc Co on (100) diamond

Kemner, K. M., Elam, W. T., Idzerda, Y. U., Wolf, J. A., Prinz, G. A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 309 KB

english, 1996

24

Naturally formed InxAl1−xAs/InyAl1−yAs vertical superlattices

Jun, Sung Won, Seong, Tae-Yeon, Lee, J. H., Lee, Bun

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 486 KB

english, 1996

25

SrTiO3 buffering effect on Pb1−xLaxTiO3 thin films prepared by pulsed laser deposition

Wang, J. P., Ling, Y. C., Yeh, M. H., Liu, K. S., Lin, I. N.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 326 KB

english, 1996

26

Selective solid phase crystallization for control of grain size and location in Ge thin films on silicon dioxide

Yang, C. M., Atwater, Harry A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 555 KB

english, 1996

27

Surface migration of ZnSe regrowth using compound source molecular beam epitaxy

Nishikawa, Takashi, Kubo, Minoru, Sasai, Yoichi

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 448 KB

english, 1996

28

Na-induced effects on the electronic structure and composition of Cu(In,Ga)Se2 thin-film surfaces

Heske, C., Fink, R., Umbach, E., Riedl, W., Karg, F.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 334 KB

english, 1996

29

The bistability of the thermal donors in silicon

Hallberg, T., Lindström, J. L.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 251 KB

english, 1996

30

Influence of aging on the performance of solid source molecular beam epitaxy grown GaInP/AlGaInP quantum well lasers

Tappura, K., Aarik, J., Nurmi, T., Pessa, M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 255 KB

english, 1996

31

Characterization of stacked gate oxides by electron holography

Rau, W.-D., Baumann, F. H., Rentschler, J. A., Roy, P. K., Ourmazd, A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 374 KB

english, 1996

32

The ordered–disordered transition in Si delta-doped GaAs

Buyanov, A. V., Holtz, P. O., Chen, W. M., Monemar, B., Anderson, T. G., Thordson, J.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 256 KB

english, 1996

33

Nonresonant electron tunneling in cluster superlattice of tellurium in zeolite

Tang, Zi Kang, Wang, Xiang-Rong

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 280 KB

english, 1996

34

Quantitative investigation of localized ion irradiation effects in n-channel metal-oxide-semiconductor field-effect transistors using single ion microprobe

Koh, Meishoku, Horita, Katsuyuki, Shigeta, Bungo, Igarashi, Kai, Matsukawa, Takashi, Tanii, Takashi, Mori, Shigetaka, Ohdomari, Iwao

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 914 KB

english, 1996

35

Subharmonic-pumped continuous-wave parametric oscillator

Schiller, S., Breitenbach, G., Paschotta, R., Mlynek, J.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 268 KB

english, 1996

36

Nonalloyed ohmic contacts to heavily Be-doped GaP and InxGa1−xP

Tagare, M. V., Chin, T. P., Woodall, J. M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 261 KB

english, 1996

37

Transport through an array of small ohmic contacts alloyed to the two-dimensional electron gas of a GaAs/AlGaAs heterostructure

Chabasseur-Molyneux, V., Frost, J. E. F., Simmons, M. Y., Ritchie, D. A., Pepper, M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 258 KB

english, 1996

38

Ultrashort lifetime photocarriers in Ge thin films

Sekine, N., Hirakawa, K., Sogawa, F., Arakawa, Y., Usami, N., Shiraki, Y., Katoda, T.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 258 KB

english, 1996

39

Geometrical anisotropy dependence of thermal diffusivity in lyotropic nematics: Mode mismatched thermal lens measurements

Bento, A. C., Palangana, A. J., Evangelista, L. R., Baesso, M. L., Pereira, J. R. D., da Silva, E. C., Mansanares, A. M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 258 KB

english, 1996

40

Thickness measurements of Si1−xGex layers on Si mesa structures using Raman spectroscopy

Wasserman, A., Roth, D. J., Beserman, R., Hoffman, A., Dettmer, K.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 265 KB

english, 1996

41

The temperature dependence of the ion beam induced interfacial amorphization in silicon

Henkel, T., Heera, V., Kögler, R., Skorupa, W., Seibt, M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 346 KB

english, 1996

42

Formation of rare-earth oxide doped silicon by spark processing

St. John, John V., Coffer, Jeffery L., Gyu Rho, Young, Pinizzotto, Russell F.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 411 KB

english, 1996

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