Volume 68; Issue 26

Applied Physics Letters

Volume 68; Issue 26
1

Theory of improved resolution in depth profiling with sample rotation

Year:
1996
Language:
english
File:
PDF, 390 KB
english, 1996
4

High responsitivity intrinsic photoconductors based on AlxGa1−xN

Year:
1996
Language:
english
File:
PDF, 416 KB
english, 1996
9

Synchrotron radiation excited etching of diamond

Year:
1996
Language:
english
File:
PDF, 650 KB
english, 1996
10

High etch rates of SiC in magnetron enhanced SF6 plasmas

Year:
1996
Language:
english
File:
PDF, 305 KB
english, 1996
15

Energy relations for space-charge waves in photorefractive materials

Year:
1996
Language:
english
File:
PDF, 334 KB
english, 1996
17

Thermally stimulated current trap in GaN

Year:
1996
Language:
english
File:
PDF, 342 KB
english, 1996
19

High power generation with distributed Josephson-junction arrays

Year:
1996
Language:
english
File:
PDF, 390 KB
english, 1996
27

Optical gain in GaInN/GaN heterostructures

Year:
1996
Language:
english
File:
PDF, 297 KB
english, 1996
29

Tensile-strained barrier GaAsP/GaAs single quantum-well lasers

Year:
1996
Language:
english
File:
PDF, 247 KB
english, 1996
30

Space-charge-limited currents in nonstoichiometric GaAs

Year:
1996
Language:
english
File:
PDF, 281 KB
english, 1996
35

Regimes of particle trapping in inductively coupled plasma processing reactors

Year:
1996
Language:
english
File:
PDF, 281 KB
english, 1996
39

X-ray standing wave study of a Si-adsorbed GaAs(001) surface

Year:
1996
Language:
english
File:
PDF, 262 KB
english, 1996
41

Deep level defects in n-type GaN compensated with Mg

Year:
1996
Language:
english
File:
PDF, 256 KB
english, 1996