Volume 68; Issue 3

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Applied Physics Letters
Volume 68; Issue 3

Applied Physics Letters

Volume 68; Issue 3

1

Correlation between photoluminescence and oxygen vacancies in ZnO phosphors

Vanheusden, K., Seager, C. H., Warren, W. L., Tallant, D. R., Voigt, J. A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 299 KB

english, 1996

2

Applied‐voltage induced fatigue of lithium niobate waveguide

Nagata, Hirotoshi, Mitsugi, Naoki, Sakamoto, Toshihiro, Kiuchi, Kazumasa, Ichikawa, Junichiro

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 437 KB

english, 1996

3

Local amorphous thin-film crystallization induced by focused electron-beam irradiation

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 593 KB

english, 1996

4

Fabrication of 3 nm wires using 100 keV electron beam lithography and poly(methyl methacrylate) resist

Cumming, D. R. S., Thoms, S., Beaumont, S. P., Weaver, J. M. R.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 559 KB

english, 1996

5

Theoretical study of room temperature optical gain in GaN strained quantum wells

Chow, W. W., Wright, A. F., Nelson, J. S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 363 KB

english, 1996

6

Thin film diamond photodiode for ultraviolet light detection

Whitfield, Michael D., Chan, Simon SM, Jackman, Richard B.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 330 KB

english, 1996

7

Photoluminescence excitation spectra in GaAs/AlAs trench-buried quantum wires with 20 nm wide rectangular cross-sectional shapes

Sogawa, T., Ando, S., Ando, H., Kanbe, H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 377 KB

english, 1996

8

Insulatorâmetal transitions in Pr0.7Ca0.3MnO3 induced by a magnetic field

Barratt, J., Lees, M. R., Balakrishnan, G., McK Paul, D.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 296 KB

english, 1996

9

Trace oxygen effects on copper nanoparticle size and morphology

Olynick, D. L., Gibson, J. M., Averback, R. S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 349 KB

english, 1996

10

Long-lived excited state of C60 in C60/phthalocyanine heterojunction solar cell

Murata, Kazuhiko, Ito, Shoji, Takahashi, Kohshin, Hoffman, Brian M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 366 KB

english, 1996

11

Laser activation of diamond films for electroless metal plating: Valence band modifications

Pimenov, S. M., Shafeev, G. A., Loubnin, E. N.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 434 KB

english, 1996

12

Reduction of unintentional aluminum spikes at SiC vapor phase epitaxial layer/substrate interfaces

Burk, A. A., Rowland, L. B.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 300 KB

english, 1996

13

Probe-surface interaction in near-field optical microscopy: The nonlinear bending force mechanism

Gregor, M. J., Blome, P. G., Schöfer, J., Ulbrich, R. G.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 352 KB

english, 1996

14

A Josephson field effect transistor using an InAs-inserted-channel In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure

Akazaki, Tatsushi, Takayanagi, Hideaki, Nitta, Junsaku, Enoki, Takatomo

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 363 KB

english, 1996

15

Morphology of luminescent GaN films grown by molecular beam epitaxy

Trager-Cowan, C., O’Donnell, K. P., Hooper, S. E., Foxon, C. T.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 461 KB

english, 1996

16

Electron cyclotron resonance etching characteristics of GaN in SiCl4/Ar

Zhang, L., Ramer, J., Brown, J., Zheng, K., Lester, L. F., Hersee, S. D.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 404 KB

english, 1996

17

B implants in Si1−xGex/Si

Berry, Alok K., Thompson, P. E., Rao, Mulpuri V., Fatemi, M., Dietrich, H. B.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 322 KB

english, 1996

18

Effect of electric current on duration of cleavage luminescence

Busch, E., Haneman, D., McAlpine, N. S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 314 KB

english, 1996

19

Mechanically induced structural relaxation in an amorphous metallic Fe80B20 alloy

Fan, G. J., Quan, M. X., Hu, Z. Q.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 313 KB

english, 1996

20

Dual-wavelength AlGaAs/GaAs laser by selective removal of a quantum well in an asymmetric dual quantum well structure

Beernink, K. J., Sun, D., Thornton, R. L., Treat, D. W.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 324 KB

english, 1996

21

Comment on ‘‘Hysteresis of trapped charge in AlGaSb barrier as a mechanism for the current bistability in AlGaSb/InAs/AlGaSb double-barrier structures’’ [Appl. Phys. Lett. 64, 2994 (1994)]

Schulman, J. N.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 291 KB

english, 1996

22

Electron energy relaxation in infrared hot-electron transistors

Choi, K. K., Tidrow, M. Z., Chang, W. H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 362 KB

english, 1996

23

Longitudinal size effect on conductivity in double quantum wells

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 288 KB

english, 1996

24

Oscillator strength dependence of cavity-polariton mode splitting in semiconductor microcavities

Kadoya, Y., Kameda, K., Yamanishi, M., Nishikawa, T., Kannari, T., Ishihara, T., Ogura, I.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 281 KB

english, 1996

25

Noncritical phase-matched second-harmonic generation with an organic crystal, 4-(isopropylcarbamoyl)nitrobenzene

Endoh, Hiroyuki, Kawaharada, Miho, Hasegawa, Etsuo

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 249 KB

english, 1996

26

Dynamics of bound-exciton luminescences from epitaxial GaN

Eckey, L., Holst, J.-Ch., Maxim, P., Heitz, R., Hoffmann, A., Broser, I., Meyer, B. K., Wetzel, C., Mokhov, E. N., Baranov, P. G.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 263 KB

english, 1996

27

Incorporation of Zn during epitaxial growth of Y1Ba2Cu3O7−d films by pulsed laser deposition

Ogale, S. B., Rajeswari, M., Sharma, R. P., Venkatesan, T.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 256 KB

english, 1996

28

Erratum: ‘‘Efficient luminescence from AIP/GaP neighboring confinement structure with AlGaP barrier layers’’ [Appl. Phys. Lett. 67, 1048 (1995)]

Issiki, F., Fukatsu, S., Shiraki, Y.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 201 KB

english, 1996

29

Growth and characterization of II–VI blue light-emitting diodes using short period superlattices

Wu, B. J., Kuo, L. H., DePuydt, J. M., Haugen, G. M., Haase, M. A., Salamanca-Riba, L.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 384 KB

english, 1996

30

Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena

Jaraiz, M., Gilmer, G. H., Poate, J. M., de la Rubia, T. D.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 255 KB

english, 1996

31

Study of the effect of hydrogen on transport properties in chemical vapor deposited diamond films by Hall measurements

Hayashi, Kazushi, Yamanaka, Sadanori, Okushi, Hideyo, Kajimura, Koji

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 238 KB

english, 1996

32

Optically induced birefringence in bacteriorhodopsin as an optical limiter

Dovgalenko, George E., Klotz, Matthew, Salamo, Gregory J., Wood, Gary L.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 291 KB

english, 1996

33

Anomalous second harmonic generation in BaTiO3 thin films

Rotter, L. D., Kaiser, D. L., Vaudin, M. D.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 284 KB

english, 1996

34

Structural study of nanocrystallized Cu83Co17 ribbons by scanning friction force microscopy

Correia, A., García, N., Massanell, J., Costa-Krämer, J. L.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 909 KB

english, 1996

35

Dielectric apertures as intracavity lenses in vertical-cavity lasers

Coldren, L. A., Thibeault, B. J., Hegblom, E. R., Thompson, G. B., Scott, J. W.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 292 KB

english, 1996

36

Characterization of shallow acceptors in GaAs by microsecond-scale time-resolved photoluminescence

Gilinsky, A. M., Zhuravlev, K. S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 250 KB

english, 1996

37

Nucleation and evolution of misfit dislocations in ZnSe/GaAs (001) heterostructures grown by low-pressure organometallic vapor phase epitaxy

Ruvimov, Sergei, Bourret, Edith D., Washburn, Jack, Liliental-Weber, Zuzanna

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 571 KB

english, 1996

38

Multiphonon-relaxation processes in self-organized InAs/GaAs quantum dots

Heitz, R., Grundmann, M., Ledentsov, N. N., Eckey, L., Veit, M., Bimberg, D., Ustinov, V. M., Egorov, A. Yu., Zhukov, A. E., Kop’ev, P. S., Alferov, Zh. I.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 272 KB

english, 1996

39

Accurate in situ lattice matching from the dynamics of high energy electron diffraction

Cunningham, J. E., Pathak, R. N., Jan, W. Y.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 252 KB

english, 1996

40

Observation of the quantum confined ground state in InP quantum dots at 300 K

Giessen, H., Fluegel, B., Mohs, G., Peyghambarian, N., Sprague, J. R., Micic, O. I., Nozik, A. J.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 254 KB

english, 1996

41

Time and spatially resolved photoluminescence measurements of nonstoichiometric GaAs

Marcinkevičius, S., Krotkus, A., Jasutis, V., Bertulis, K., Tan, H. H., Jagadish, C., Kaminska, M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 300 KB

english, 1996

42

Dependence of ZnTe-based contact structure properties on nitrogen concentration

Taike, A., Momose, M., Kawata, M., Gotoh, J., Mochizuki, K., Nakatsuka, S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 265 KB

english, 1996

43

Low resistance graded contacts to n-type ZnSe

Lazzarino, M., Ozzello, T., Bratina, G., Paggel, J. J., Vanzetti, L., Sorba, L., Franciosi, A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 297 KB

english, 1996

44

Epitaxial film thickness in the low-temperature growth of Si(100) by plasma enhanced chemical vapor deposition

Varhue, W. J., Rogers, J. L., Andry, P. S., Adams, E.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 306 KB

english, 1996

45

Pulse-time-modulated electron cyclotron resonance plasma etching with low radio-frequency substrate bias

Samukawa, Seiji

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 363 KB

english, 1996

46

A method for fabricating silicon quantum wires based on SiGe/Si heterostructure

Liu, J. L., Shi, Y., Wang, F., Lu, Y., Zhang, R., Han, P., Gu, S. L., Zheng, Y. D.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 352 KB

english, 1996

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