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Volume 68; Issue 6
Main
Applied Physics Letters
Volume 68; Issue 6
Applied Physics Letters
Volume 68; Issue 6
1
Temperature of quasi‐two‐dimensional electron gases under steady‐state terahertz drive
Asmar, N. G.
,
Cerne, J.
,
Markelz, A. G.
,
Gwinn, E. G.
,
Sherwin, M. S.
,
Campman, K. L.
,
Gossard, A. C.
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 337 KB
Your tags:
english, 1996
2
Blue luminescence from Si+‐implanted SiO2 films thermally grown on crystalline silicon
Liao, Liang‐Sheng
,
Bao, Xi‐Mao
,
Zheng, Xiang‐Qin
,
Li, Ning‐Sheng
,
Min, Nai‐Ben
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 309 KB
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english, 1996
3
Nanostructure fabrication using laser field enhancement in the near field of a scanning tunneling microscope tip
Jersch, J.
,
Dickmann, K.
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 627 KB
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english, 1996
4
Peak-to-valley ratio of small resonant-tunneling diodes with various barrier-thickness asymmetries
Schmidt, T.
,
Tewordt, M.
,
Haug, R. J.
,
Klitzing, K. v.
,
SchoÌnherr, B.
,
Grambow, P.
,
FoÌrster, A.
,
LuÌth, H.
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 499 KB
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english, 1996
5
Hardness, elastic modulus, and structure of very hard carbon films produced by cathodic-arc deposition with substrate pulse biasing
Pharr, George M.
,
Callahan, Daniel L.
,
McAdams, Shaun D.
,
Tsui, Ting Y.
,
Anders, Simone
,
Anders, AndreÌ
,
Ager, Joel W.
,
Brown, Ian G.
,
Bhatia, C. Singh
,
Silva, S. R. P.
,
Robertson, John
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 391 KB
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english, 1996
6
Extended x-ray absorption fine structure of metastable bcc and fcc phases in mechanically alloyed FeâCu
Schilling, P. J.
,
He, J.-H.
,
Cheng, J.
,
Ma, E.
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 392 KB
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english, 1996
7
Piezoresistive effect in wurtzite n-type GaN
Bykhovski, A. D.
,
Kaminski, V. V.
,
Shur, M. S.
,
Chen, Q. C.
,
Khan, M. A.
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 283 KB
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english, 1996
8
Etching of InP at â³1 μm/min in Cl2/Ar plasma chemistries
Lee, J. W.
,
Hong, J.
,
Pearton, S. J.
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 569 KB
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english, 1996
9
Proposed structure for a crossed-laser beam, GeV per meter gradient, vacuum electron linear accelerator
Huang, Y. C.
,
Zheng, D.
,
Tulloch, W. M.
,
Byer, R. L.
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 288 KB
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english, 1996
10
Noise temperature limit of a superconducting hot-electron bolometer mixer
Karasik, B. S.
,
Elantiev, A. I.
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 347 KB
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english, 1996
11
Excitation power and barrier width dependence of photoluminescence in piezoelectric multiquantum well p-i-n structures
J. P. R. David
,
T. E. Sale
,
A. S. Pabla
,
P. J. Rodríguez-gironés
,
J. Woodhead
,
R. Grey
,
G. J. Rees
,
P. N. Robson
,
M. S. Skolnick
,
R. A. Hogg
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 261 KB
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english, 1996
12
Low threshold PbEuSeTe/PbTe separate confinement buried heterostructure diode lasers
Feit, Z.
,
McDonald, M.
,
Woods, R. J.
,
Archambault, V.
,
Mak, P.
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 414 KB
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english, 1996
13
Epitaxial growth of zinc-blende ZnSe/MgS superlattices on (001) GaAs
Uesugi, Katsuhiro
,
Obinata, Toshio
,
Suemune, Ikuo
,
Kumano, Hidekazu
,
Nakahara, Jun’ichiro
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 318 KB
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english, 1996
14
The onset of secondary phase precipitation during synthesis of heteroepitaxial Si1−x−yGexCy on Si(100)
Herbots, Nicole
,
Ye, Peihua
,
Jacobsson, Harald
,
Xiang, Joan
,
Hearne, Sean
,
Cave, Nigel
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 445 KB
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english, 1996
15
High-resolution x-ray diffraction of self-organized InGaAs/GaAs quantum dot structures
Krost, A.
,
Heinrichsdorff, F.
,
Bimberg, D.
,
Darhuber, A.
,
Bauer, G.
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 343 KB
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english, 1996
16
Beam induced deposition of an ultraviolet transparent silicon oxide film by focused gallium ion beam
Ogasawara, M.
,
Kariya, M.
,
Nakamura, H.
,
Komano, H.
,
Inoue, S.
,
Sugihara, K.
,
Hayasaka, N.
,
Horioka, K.
,
Takigawa, T.
,
Okano, H.
,
Mori, I.
,
Yamazaki, Y.
,
Miyoshi, M.
,
Watanabe, T.
,
Okumura, K.
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 316 KB
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english, 1996
17
Raman spectroscopy of laser ablated BaTiO3/YBa2Cu3O7−x thin film bilayer structure
Cui, Dafu
,
Li, Chunling
,
Ma, Kun
,
Zhou, Yueliang
,
Liu, Yanwei
,
Chen, Zhenghao
,
Ma, Jianwei
,
Li, Lin
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 307 KB
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english, 1996
18
Microstructure of epitaxial potassium niobate thin films prepared by metalorganic chemical vapor deposition
Nystrom, M. J.
,
Wessels, B. W.
,
Chen, J.
,
Marks, T. J.
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 1.26 MB
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english, 1996
19
Reduction of low-frequency excess noise in superconducting quantum interference devices by applying high-frequency magnetic fields
Schöne, S.
,
Mück, M.
,
Heiden, C.
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 311 KB
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english, 1996
20
Growth and characterization of K3Li2(TaxNb1−x)5O15 crystals for blue second-harmonic-generation applications
Furukawa, Y.
,
Makio, S.
,
Miyai, T.
,
Sato, M.
,
Kitayama, H.
,
Urata, Y.
,
Tamiuchi, T.
,
Fukuda, T.
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 317 KB
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english, 1996
21
Atomic absorption monitor for deposition process control of aluminum at 394 nm using frequency-doubled diode laser
Wang, Weizhi
,
Fejer, M. M.
,
Hammond, R. H.
,
Beasley, M. R.
,
Ahn, C. H.
,
Bortz, M. L.
,
Day, T.
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 310 KB
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english, 1996
22
High oxygen and carbon contents in GaAs epilayers grown below a critical substrate temperature by molecular beam epitaxy
Goo, C. H.
,
Lau, W. S.
,
Chong, T. C.
,
Tan, L. S.
,
Chu, Paul K.
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 325 KB
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english, 1996
23
Calculation of the fractional interstitial component of boron diffusion and segregation coefficient of boron in Si0.8Ge0.2
Fang, Tilden T.
,
Fang, Wingra T. C.
,
Griffin, Peter B.
,
Plummer, James D.
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 325 KB
Your tags:
english, 1996
24
Fishtail effect and small size normal core pinning in melt-textured-growth YBa2Cu3O7−δ bulks
Wen, Hai-hu
,
Zhao, Zhong-xian
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 376 KB
Your tags:
english, 1996
25
Superconductivity above 130 K in high-quality mercury-based cuprate thin films
Yun, S. H.
,
Wu, J. Z.
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 317 KB
Your tags:
english, 1996
26
Oxynitridation of silicon by remote-plasma excited nitrogen and oxygen
Saito, Yoji
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 313 KB
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english, 1996
27
Macroporous silicon with a complete two-dimensional photonic band gap centered at 5 μm
Grüning, U.
,
Lehmann, V.
,
Ottow, S.
,
Busch, K.
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 349 KB
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english, 1996
28
Persistent holographic absorption gratings in AlSb:Se
McKenna, J. M.
,
Nolte, D. D.
,
Walukiewicz, W.
,
Becla, P.
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 262 KB
Your tags:
english, 1996
29
Wavelength-selective waveguide photodetectors in silicon-on-insulator
Pezeshki, B.
,
Agahi, F.
,
Kash, J. A.
,
Welser, J. J.
,
Wang, W.-K.
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 269 KB
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english, 1996
30
Photoassisted dry etching of GaN
Leonard, R. T.
,
Bedair, S. M.
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 323 KB
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english, 1996
31
Enhancement of terahertz acoustic-phonon generation by the magnetic field applied parallel to a two-dimensional semiconductor system
Xu, W.
,
Zhang, C.
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 303 KB
Your tags:
english, 1996
32
Effect of hydrogen dilution on the deposition rate of hydrogenerated amorphous silicon films in a modified pulsed plasma discharge
Mukherjee, C.
,
Anandan, C.
,
Seth, Tanay
,
Dixit, P. N.
,
Bhattacharyya, R.
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 248 KB
Your tags:
english, 1996
33
Electrical properties of paraelectric (Pb,La)(Nb,Ti)O3 thin films for dynamic random access memory devices
Lee, Su Jae
,
Cho, Chae Ryong
,
Kang, Min Soo
,
Jang, Min Su
,
Kang, Kwang Yong
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 401 KB
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english, 1996
34
Improved heterojunction bipolar transistor reliability with carbon-doped base
Wang, Guan-Wu
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 232 KB
Your tags:
english, 1996
35
Equilibrium tunneling between two-dimensional and quasi-one-dimensional electron gases in devices fabricated by in situ focused ion beam lithography
Kardynal̸, B.
,
Linfield, E. H.
,
Ritchie, D. A.
,
Brown, K. M.
,
Barnes, C. H. W.
,
Jones, G. A. C.
,
Pepper, M.
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 265 KB
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english, 1996
36
Room-temperature electron spin dynamics in GaAs/AlGaAs quantum wells
Tackeuchi, Atsushi
,
Nishikawa, Yuji
,
Wada, Osamu
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 272 KB
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english, 1996
37
Pb(Zr,Ti)O3 thin films on zirconium membranes for micromechanical applications
Maeder, T.
,
Muralt, P.
,
Sagalowicz, L.
,
Reaney, I.
,
Kohli, M.
,
Kholkin, A.
,
Setter, N.
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 449 KB
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english, 1996
38
Uncongruent laser ablation and electroless metallization of SiC
Shafeev, G. A.
,
Bellard, L.
,
Themlin, J.-M.
,
Fauquet-Ben Ammar, C.
,
Cros, A.
,
Marine, W.
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 388 KB
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english, 1996
39
Comparison of thermally oxidized metal–oxide–semiconductor interfaces on 4H and 6H polytypes of silicon carbide
Shenoy, Jayarama N.
,
Cooper, James A.
,
Melloch, Michael R.
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 234 KB
Your tags:
english, 1996
40
Nitrogen induced increase of growth rate in chemical vapor deposition of diamond
Müller-Sebert, W.
,
Wörner, E.
,
Fuchs, F.
,
Wild, C.
,
Koidl, P.
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 234 KB
Your tags:
english, 1996
41
High energy particle irradiation effects on the low-frequency noise of Czochralski silicon junction diodes
Simoen, E.
,
Vanhellemont, J.
,
Dubuc, J. P.
,
Claeys, C.
,
Ohyama, H.
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 242 KB
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english, 1996
42
Atomic force microscopy for high speed imaging using cantilevers with an integrated actuator and sensor
Manalis, S. R.
,
Minne, S. C.
,
Quate, C. F.
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 538 KB
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english, 1996
43
Preparation of low dielectric constant F-doped SiO2 films by plasma enhanced chemical vapor deposition
Woo Lim, Sang
,
Shimogaki, Yukihiro
,
Nakano, Yoshiaki
,
Tada, Kunio
,
Komiyama, Hiroshi
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 335 KB
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english, 1996
44
A nanoscale self-organization induced by removing Ga atoms on the Si(111)–√3×√3–Ga surface
Fujita, Ken
,
Kusumi, Yukihiro
,
Ichikawa, Masakazu
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 743 KB
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english, 1996
45
Study of a backgated metal-semiconductor-metal photodetector
Vickers, A. J.
,
Hassan, M. A.
,
Mashakekhi, H. R.
,
Griguoli, A.
,
Hopkinson, M.
Journal:
Applied Physics Letters
Year:
1996
Language:
english
File:
PDF, 338 KB
Your tags:
english, 1996
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