Volume 68; Issue 8

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Applied Physics Letters
Volume 68; Issue 8

Applied Physics Letters

Volume 68; Issue 8

1

Determination of the effective mass of GaN from infrared reflectivity and Hall effect

Perlin, P., Litwin-Staszewska, E., Suchanek, B., Knap, W., Camassel, J., Suski, T., Piotrzkowski, R., Grzegory, I., Porowski, S., Kaminska, E., Chervin, J. C.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 373 KB

english, 1996

2

Quasistatic and high frequency capacitanceâvoltage characterization of Ga2O3âGaAs structures fabricated by in situ molecular beam epitaxy

Passlack, M., Hong, M., Mannaerts, J. P.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 392 KB

english, 1996

3

Generation of a frequency agile modulated intense relativistic electron beam

Friedman, M., Pasour, J., Smithe, D.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 481 KB

english, 1996

4

Observation of double cyclotron resonance in modulation-Î´-doped In0.52Al0.48As/In0.53Ga0.47As heterostructure by optical detection

Chen, Y. F., Dai, Y. T., Lo, I.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 379 KB

english, 1996

5

Organic field-effect bipolar transistors

Dodabalapur, A., Katz, H. E., Torsi, L., Haddon, R. C.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 360 KB

english, 1996

6

Interface inequivalence of the InP/InAlAs/InP staggered double heterostructure grown by metalorganic chemical vapor deposition

Böhrer, J., Krost, A., Heitz, R., Heinrichsdorff, F., Eckey, L., Bimberg, D., Cerva, H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 848 KB

english, 1996

7

Behavior of electromigration-induced gaps in a layered Al line observed by in situ sideview transmission electron microscopy

Okabayashi, H., Kitamura, H., Komatsu, M., Mori, H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 441 KB

english, 1996

8

Deformation of sapphire induced by a spherical indentation on the (101̄0) plane

R. Nowak, T. Sekino, S. Maruno, K. Niihara

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 1.38 MB

english, 1996

9

Photoluminescence of polycrystalline CuInSe2 thin films

S. Zott, K. Leo, M. Ruckh, H. Schock

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 556 KB

english, 1996

10

Metal–semiconductor junctions on p-type strained Si1−xGex layers

Nur, O., Willander, M., Turan, R., Sardela, M. R., Hansson, G. V.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 328 KB

english, 1996

11

Electron–phonon interactions in solid C60 studied by transient picosecond Raman spectroscopy

Tsen, K. T., Grann, E. D., Guha, S., Menendez, J.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 323 KB

english, 1996

12

Enhancing discharge uniformity in a multi-kilowatt radio frequency excited CO2 slab laser array

Strohschein, J. D., Bilida, W. D., Seguin, H. J. J., Capjack, C. E.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 330 KB

english, 1996

13

Microstructure, friction, and wear characteristics of the as-deposited and carbon ion-implanted diamond films

Wu, Richard L. C., Rai, A. K., Miyoshi, Kazuhisa

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 409 KB

english, 1996

14

Properties of Schottky contact of Al on SiGe alloys

Jiang, R. L., Liu, J. L., Li, J., Shi, Y., Zheng, Y. D.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 314 KB

english, 1996

15

Carrier profile for In0.35Ga0.65As/GaAs multiquantum well lasers from capacitance–voltage measurements

Arias, J., Esquivias, I., Ralston, J. D., Larkins, E. C., Weisser, S., Rosenzweig, J., Schönfelder, A., Maier, M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 318 KB

english, 1996

16

Hydrogen passivation of visible p-i-n type thin-film light-emitting diodes

Lee, Jong-Wook, Lim, Koeng Su

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 310 KB

english, 1996

17

Femtosecond dynamics of the optical Stark effect in semiconductor-doped glass

Tsuda, Sérgio, Brito Cruz, Carlos H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 337 KB

english, 1996

18

Study of double barrier superlattice by synchrotron radiation and double-crystal x-ray diffraction

Zhuang, Y., Wang, Y. T., Jiang, D. S., Yang, X. P., Jiang, X. M., Wu, J. Y., Xiu, L. S., Zheng, W. L.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 348 KB

english, 1996

19

Role of C and B clusters in transient diffusion of B in silicon

Cowern, N. E. B., Cacciato, A., Custer, J. S., Saris, F. W., Vandervorst, W.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 337 KB

english, 1996

20

Influence of nitrogen additions on hot-filament chemical vapor deposition of diamond

Bohr, S., Haubner, R., Lux, B.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 512 KB

english, 1996

21

Experimental determination of a time–temperature-transformation diagram of the undercooled Zr41.2Ti13.8Cu12.5Ni10.0Be22.5 alloy using the containerless electrostatic levitation processing technique

Kim, Y. J., Busch, R., Johnson, W. L., Rulison, A. J., Rhim, W. K.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 323 KB

english, 1996

22

Lateral inhomogeneity in InGaAs–GaAs quantum wire arrays by selective-area metalorganic chemical vapor deposition

Osowski, M. L., Panepucci, R., Turnbull, D. A., Gu, S. Q., Jones, A. M., Bishop, S. G., Adesida, I., Coleman, J. J.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 372 KB

english, 1996

23

Selectivity of growth on patterned GaAs (311)A substrates

Nötzel, Richard, Menniger, Johann, Ramsteiner, Manfred, Ruiz, Ana, Schönherr, Hans-Peter, Ploog, Klaus H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 550 KB

english, 1996

24

Highly efficient electroluminescence of new wide band gap ladder-type poly(para-phenylenes)

Tasch, S., Niko, A., Leising, G., Scherf, U.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 343 KB

english, 1996

25

Superconducting quantum interference devices based on YBaCuO nanobridges

Pedyash, M. V., Blank, D. H. A., Rogalla, H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 295 KB

english, 1996

26

Suppression of current through an Esaki–Tsu GaAs/AlAs superlattice by millimeter wave irradiation

Schomburg, E., Ignatov, A. A., Grenzer, J., Renk, K. F., Pavel’ev, D. G., Koschurinov, Yu., Melzer, B. Ja., Ivanov, S., Schaposchnikov, S., Kop’ev, P. S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 289 KB

english, 1996

27

Photoinduced molecular alignment relaxation in poled electro-optic polymer thin films

Shi, Yongqiang, Olson, David J., Bechtel, James H., Kalluri, Srinath, Steier, William H., Wang, Wenshen, Chen, Datong, Fetterman, Harold R.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 263 KB

english, 1996

28

Erratum: ‘‘Growth of germanium-carbon alloys on silicon substrates by molecular beam epitaxy’’ [Appl. Phys. Lett. 67, 1865 (1995)]

Kolodzey, J., O’Neil, P. A., Zhang, S., Orner, B. A., Roe, K., Unruh, K. M., Swann, C. P., Waite, M. M., Shah, S. Ismat

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 210 KB

english, 1996

29

Deposition of high quality wurtzite GaN films over cubic (111) MgAl2O4 substrates using low pressure metalorganic chemical vapor deposition

Sun, C. J., Yang, J. W., Chen, Q., Asif Khan, M., George, T., Chang-Chien, P., Mahajan, S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 343 KB

english, 1996

30

ArF and KrF excimer laser deposition of yttria-stabilized zirconia on Si(100)

Delgado, J. C., Sánchez, F., Aguiar, R., Maniette, Y., Ferrater, C., Varela, M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 551 KB

english, 1996

31

Induced magnetic anisotropy in Fe80B20 metallic glass by mechanical milling

Fan, G. J., Quan, M. X., Hu, Z. Q.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 255 KB

english, 1996

32

Electrical detection of electron nuclear double resonance in silicon

Stich, B., Greulich-Weber, S., Spaeth, J.-M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 260 KB

english, 1996

33

C-axis oriented (Hg,Ti)-based superconducting films with Tc≳125 K

Foong, F., Bedard, B., Xu, Q. L., Liou, S. H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 308 KB

english, 1996

34

A primary x-ray investigation of the turning of ferroelectric microspheres contained in electrorheological fluids under a direct current electric field

Wen, Weijia, Lu, Kunquan

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 235 KB

english, 1996

35

Polarization-insensitive wavelength filters by birefringence compensation of vertical couplers

Deri, R. J., Emanuel, M. A., Patterson, F. G., Dijaili, S. P., Nguyen, L. T.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 751 KB

english, 1996

36

Coimplantation of carbon and group II acceptors in GaAs

Morton, R., Lau, S. S., Poker, D. B., Chu, P. K.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 249 KB

english, 1996

37

Size and volume distributions of thermally induced stress voids in AlCu metallization

Kordic, Srdjan, Engel, Jan, Wolters, Rob A. M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 255 KB

english, 1996

38

Low field giant magnetoresistance in sputtered permalloy/Au multilayers

Parkin, S. S. P., Rabedeau, T.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 273 KB

english, 1996

39

Epitaxial growth of highly conductive RuO2 thin films on (100) Si

Jia, Q. X., Song, S. G., Wu, X. D., Cho, J. H., Foltyn, S. R., Findikoglu, A. T., Smith, J. L.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 511 KB

english, 1996

40

Laser focused atomic deposition: A new lithography tool

Behringer, R. E., Natarajan, Vasant, Timp, G.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 597 KB

english, 1996

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