Volume 68; Issue 9

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Applied Physics Letters
Volume 68; Issue 9

Applied Physics Letters

Volume 68; Issue 9

1

Record low surface recombination velocities on 1 Ω cm p‐silicon using remote plasma silicon nitride passivation

Lauinger, Thomas, Schmidt, Jan, Aberle, Armin G., Hezel, Rudolf

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 318 KB

english, 1996

2

High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN

Wang, Lei, Nathan, M. I., Lim, T‐H., Khan, M. A., Chen, Q.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 363 KB

english, 1996

3

Visible photoluminescence from Ge nanocrystal embedded into a SiO2 matrix fabricated by atmospheric pressure chemical vapor deposition

Dutta, Achyut Kumar

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 371 KB

english, 1996

4

Outdiffusion of impurity atoms from silicon crystals and its dependence upon the annealing atmosphere

Zhong, Lei, Kirino, Yoshio, Matsushita, Yoshiaki, Aiba, Yoshiro, Hayashi, Kenro, Takeda, Ryuji, Shirai, Hiroshi, Saito, Hiroyoki, Matsushita, Junichi, Yoshikawa, Jun

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 341 KB

english, 1996

5

Criterion for selecting phonons and local vibrations involved in the nonradiative relaxation of photoexcited Cr4+ ions in forsterite

Demos, S. G., Calistru, Dana M., Alfano, R. R.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 326 KB

english, 1996

6

Roughening kinetics of chemical vapor deposited copper films on Si(100)

Vázquez, L., Albella, J. M., Salvarezza, R. C., Arvia, A. J., Levy, R. A., Perese, D.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 447 KB

english, 1996

7

Lithographic point contacts for transverse electron focusing in bismuth

Jaeger, M. D., Tsoi, V., Golding, B.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 352 KB

english, 1996

8

Modulation bandwidth of high-power single quantum well buried heterostructure InGaAsP/InP (λ=1.3 μm) and InGaAsP/GaAs (λ=0.8 μm) laser diodes

Berishev, I. E., Gorbachev, A. Yu., Mishournyi, V. A., Ilyinskaya, N. D., Stankevich, A. L., Tarasov, I. S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 329 KB

english, 1996

9

Dynamic vapor pressure measurements of the dimethyl zinc.triethylamine adduct using an ultrasonic monitor

Griffiths, C. L., Stafford, A., Irvine, S. J. C., Maung, N., Jones, A. C., Smith, L. M., Rushworth, S. A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 304 KB

english, 1996

10

Stress dependence of coercivity in Ni films: Thin film to bulk transition

Callegaro, Luca, Puppin, Ezio

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 322 KB

english, 1996

11

Role of ion energy in determination of the sp3 fraction of ion beam deposited carbon films

Grossman, E., Lempert, G. D., Kulik, J., Marton, D., Rabalais, J. W., Lifshitz, Y.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 316 KB

english, 1996

12

Spatially resolved photoluminescence and Raman scattering experiments on the GaN/substrate interface

Siegle, H., Thurian, P., Eckey, L., Hoffmann, A., Thomsen, C., Meyer, B. K., Amano, H., Akasaki, I., Detchprohm, T., Hiramatsu, K.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 1.87 MB

english, 1996

13

Comparison of quasi-phase-matching geometries for second-harmonic generation in poled polymer channel waveguides at 1.5 μm

Jäger, M., Stegeman, G. I., Brinker, W., Yilmaz, S., Bauer, S., Horsthuis, W. H. G., Möhlmann, G. R.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 401 KB

english, 1996

14

Ultrahigh resolution of calixarene negative resist in electron beam lithography

Fujita, J., Ohnishi, Y., Ochiai, Y., Matsui, S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 515 KB

english, 1996

15

Ultrathin oxides using N2O on strained Si1−xGex layers

Mukhopadhyay, M., Ray, S. K., Nayak, D. K., Maiti, C. K.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 312 KB

english, 1996

16

1/f noise as an early indicator of electromigration damage in thin metal films

Dagge, K., Frank, W., Seeger, A., Stoll, H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 299 KB

english, 1996

17

White organic electroluminescence devices

Jordan, R. H., Dodabalapur, A., Strukelj, M., Miller, T. M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 319 KB

english, 1996

18

Surface Fermi level position of hydrogen passivated Si(111) surfaces

Miyazaki, S., Schäfer, J., Ristein, J., Ley, L.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 330 KB

english, 1996

19

Photoinduced conductivity changes in polycrystalline diamond films

Gonon, P., Prawer, S., Jamieson, D.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 252 KB

english, 1996

20

Diffusion mediated chemical reaction in Co/Ge/Si(100) forming Ge/CoSi2/Si(100)

Prabhakaran, K., Sumitomo, K., Ogino, T.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 250 KB

english, 1996

21

Birefringence and tilted modes in ordered GaInP/AlGaInP waveguides and lasers

Moritz, A., Wirth, R., Geng, C., Scholz, F., Hangleiter, A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 305 KB

english, 1996

22

Growth of 6H–SiC on 6H–SiC(0001) by migration enhanced epitaxy controlled to an atomic level using surface superstructures

Fissel, Andreas, Kaiser, Ute, Pfennighaus, Kay, Schröter, Bernd, Richter, Wolfgang

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 736 KB

english, 1996

23

Ultrafast optical pump THz-probe spectroscopy on silicon

Zielbauer, Jürgen, Wegener, Martin

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 263 KB

english, 1996

24

First implementation of a superconducting integrated receiver at 450 GHz

Koshelets, Valery P., Shitov, Sergey V., Filippenko, Lyudmila V., Baryshev, Andrey M., Golstein, Hans, de Graauw, Thijs, Luinge, Willem, Schaeffer, Harry, van de Stadt, Herman

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 254 KB

english, 1996

25

Boron-compensation effect on hydrogenated amorphous silicon with oxygen and nitrogen impurities

Isomura, Masao, Kinoshita, Toshihiro, Tsuda, Shinya

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 246 KB

english, 1996

26

High zenithal directivity from a dipole antenna on a photonic crystal

Brown, E. R., McMahon, O. B.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 319 KB

english, 1996

27

Atomic scale study of the interaction between misfit dislocations at the GaAs/Si interface

Vilà, A., Cornet, A., Morante, J. R.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 910 KB

english, 1996

28

Highly efficient phase conjugation using spatially nondegenerate four-wave mixing in a broad-area laser diode

Kürz, Peter, Nagar, Ron, Mukai, Takaaki

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 235 KB

english, 1996

29

Pressure-enhanced interdiffusion in amorphous Si/Ge multilayers

Theiss, Steven D., Spaepen, Frans, Aziz, Michael J.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 267 KB

english, 1996

30

Surface structure of 3C-SiC(111) grown on Si(111) surface by C60 precursor

Hu, C.-W., Kasuya, A., Suto, S., Wawro, A., Nishina, Y.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 347 KB

english, 1996

31

Optical behavior of alpha-C:N films

Wang, X., Martin, P. J.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 239 KB

english, 1996

32

Structure and hardness studies of CNx/TiN nanocomposite coatings

Li, Dong, Lin, Xi-Wei, Cheng, Shang-Cong, Dravid, Vinayak P., Chung, Yip-Wah, Wong, Ming-Show, Sproul, William D.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 1.13 MB

english, 1996

33

GaAs/AlAs/Si heterostructures for blocking dark current injection in impurity-band-conduction photodetectors

Martin, B. G., Lee, H. P., Jones, E. W.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 300 KB

english, 1996

34

Auger suppression in CdHgTe heterostructure diodes grown by molecular beam epitaxy using silver as acceptor dopant

Skauli, T., Steen, H., Colin, T., Helgesen, P., Lo̸vold, S., Elliott, C. T., Gordon, N. T., Phillips, T. J., White, A. M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 247 KB

english, 1996

35

Transmission electron microscopy investigation of tin sub-oxide nucleation upon SnO2 deposition on silicon

Alfonso, Claude, Charaï, Ahmed, Armigliato, Aldo, Narducci, Dario

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 413 KB

english, 1996

36

Influence of oxygen on surface morphology of metalorganic vapor phase epitaxy grown GaAs (001)

Nayak, S., Huang, J. W., Redwing, J. M., Savage, D. E., Lagally, M. G., Kuech, T. F.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 456 KB

english, 1996

37

Characteristics of carbon nitride films synthesized by single-source ion beam enhanced deposition system

Wu, Zhaocu, Yu, Yuehui, Liu, Xianghuai

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 317 KB

english, 1996

38

Cathodoluminescence and photoluminescence analysis of InxGa1−xAs/GaAs quantum well structures

Evoy, S., Redinbo, G. F., Craighead, H. G.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 320 KB

english, 1996

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