Volume 69; Issue 15

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Applied Physics Letters
Volume 69; Issue 15

Applied Physics Letters

Volume 69; Issue 15

1

Organic electroluminescent devices with improved stability

Van Slyke, S. A., Chen, C. H., Tang, C. W.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 283 KB

english, 1996

2

Charge injection in organic light‐emitting diodes: Tunneling into low mobility materials

Davids, P. S., Kogan, Sh. M., Parker, I. D., Smith, D. L.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 312 KB

english, 1996

3

Spin‐dependent tunneling in HfO2 tunnel junctions

Platt, C. L., Dieny, B., Berkowitz, A. E.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 374 KB

english, 1996

4

Addendum:ââIon beam synthesis and stability of GaAs nanocrystals in siliconââ [Appl. Phys. Lett. 68, 2389 (1996)]

White, C. W., Budai, J. D., Zhu, J. G., Withrow, S. P., Aziz, M. J.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 15 KB

english, 1996

5

Erratum:ââLaser-plasma interaction during visible-laser ablation of methodsââ [Appl. Phys. Lett. 69, 473 (1996)]

Chang, Jim J., Warnor, Bruce E.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 329 KB

english, 1996

6

A sulfur passivation for GaAs surface by an organic molecular, CH3CSNH2 treatment

Lu, E. D., Zhang, F. P., Xu, S. H., Yu, X. J., Xu, P. S., Han, Z. F., Xu, F. Q., Zhang, X. Y.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 248 KB

english, 1996

7

Single-sided output Sn/Er/Yb distributed feedback fiber laser

Loh, W. H., Dong, L., Caplen, J. E.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 239 KB

english, 1996

8

The capacitive origin of the picosecond electrical transients detected by a photoconductively gated scanning tunneling microscope

Groeneveld, R. H. M., van Kempen, H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 325 KB

english, 1996

9

Inhibition of thickness variations during growth of InAsP/InGaP and InAsP/InGaAsP multiquantum wells with high compensated strains

Patriarche, G., Ougazzaden, A., Glas, F.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 460 KB

english, 1996

10

Preparation of BaTiO3 thin films by backside pulsed ion-beam evaporation

Sonegawa, T., Grigoriu, C., Masugata, K., Yatsui, K., Shimotori, Y., Furuuchi, S., Yamamoto, H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 393 KB

english, 1996

11

Second-harmonic generation using a fiber ring resonator with a LiNbO3 waveguide and a semiconductor optical amplifier

Xu, C. Q., Shinozaki, K., Okayama, H., Kamijoh, T.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 302 KB

english, 1996

12

Effect of reactive ion etching–generated sidewall roughness on propagation loss of buried-channel silica waveguides

Bazylenko, M. V., Gross, M., Faith, M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 419 KB

english, 1996

13

Pressure induced structural transitions in nanometer size particles of PbS

Qadri, S. B., Yang, J., Ratna, B. R., Skelton, E. F., Hu, J. Z.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 321 KB

english, 1996

14

Time-resolved measurements of the photoluminescence of Cu-quenched porous silicon

Rigakis, N., Yamani, Z., AbuHassan, L. H., Hilliard, J., Nayfeh, M. H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 313 KB

english, 1996

15

Solid-phase epitaxial growth of amorphized GaAs: The influence of microscopic nonstoichiometry

Belay, K. B., Llewellyn, D. J., Ridgway, M. C.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 371 KB

english, 1996

16

Nanometer-scale local oxidation of silicon using silicon nitride islands formed in the early stages of nitridation

Tabe, Michiharu, Yamamoto, Takeshi

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 532 KB

english, 1996

17

Effect of cyclic process on the {100}-oriented texture growth of diamond film

Kim, S. H., Park, Y. S., Han, I. T., Lee, J.-W., Yun, W. S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 633 KB

english, 1996

18

Role of silicon surface in the removal of point defects in ultrashallow junctions

Sultan, A., Banerjee, S., List, S., Rodder, M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 558 KB

english, 1996

19

Investigations of the structural stability of highly strained [(Al)GaIn]As/Ga (PAs) multiple quantum wells

Marschner, T., Lutgen, S., Volk, M., Stolz, W., Göbel, E. O.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 332 KB

english, 1996

20

Mechanisms of carrier and energy injection in three-terminal laser structures

Tolstikhin, Valery I., Khrenov, Gregory Yu.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 324 KB

english, 1996

21

Back-gating effect of low-temperature GaAs on a pseudomorphic modulation-doped field-effect transistor

Folkes, P. A., Smith, Doran, Lux, R. A., Zhou, W., Thompson, R., Moerkirk, R., Lemeune, M., Cooke, P., Brown, K.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 306 KB

english, 1996

22

Splitting of the first generalized Rayleigh mode in thin layers deposited on anisotropic media

Mourad, André, Desmet, Carl, Thoen, Jan

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 324 KB

english, 1996

23

Spectroellipsometry for characterization of Zn1−xCdxSe multilayered structures on GaAs

Lee, Joungchel, Collins, R. W., Heyd, A. R., Flack, F., Samarth, N.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 340 KB

english, 1996

24

Improved thin films of pentacene via pulsed laser deposition at elevated substrate temperatures

Salih, A. J., Lau, S. P., Marshall, J. M., Maud, J. M., Bowen, W. R., Hilal, N., Lovitt, R. W., Williams, P. M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 510 KB

english, 1996

25

Target atomic number effect on the duration and conversion efficiency of ultrashort x-ray pulses

Pelletier, J. F., Chaker, M., Kieffer, J. C.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 678 KB

english, 1996

26

Nonlinear optical mapping of silicon carbide polytypes in 6H-SiC epilayers

Meyer, C., Lüpke, G., Stein von Kamienski, E., Gölz, A., Kurz, H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 496 KB

english, 1996

27

Electroluminescent device based on silicon nanopillars

Nassiopoulos, A. G., Grigoropoulos, S., Papadimitriou, D.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 499 KB

english, 1996

28

Enhancement of the light-to-current conversion efficiency in an n-SiC/solution diode by porous etching

van de Lagemaat, J., Plakman, M., Vanmaekelbergh, D., Kelly, J. J.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 368 KB

english, 1996

29

A field-sensitive photoconductive probe for sampling through passivation layers

Hwang, Jiunn-Ren, Lai, Richard K., Nees, John, Norris, Ted, Whitaker, John F.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 258 KB

english, 1996

30

Substrate dependence in the growth of epitaxial Pb1−xLaxTiO3 thin films

Kim, Y., Erbil, A., Boatner, L. A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 253 KB

english, 1996

31

Detection of hot electron current with scanning hot electron microscopy

Vázquez, F., Kobayashi, D., Kobayashi, I., Miyamoto, Y., Furuya, K., Maruyama, T., Watanabe, M., Asada, M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 261 KB

english, 1996

32

Hole traps in oxide layers thermally grown on SiC

Afanas’ev, V. V., Stesmans, A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 256 KB

english, 1996

33

Electron velocity saturation in quantized silicon carbide inversion layers

Gámiz, F., Roldán, J. B., López-Villanueva, J. A., Carceller, J. E.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 248 KB

english, 1996

34

A proposed high-gradient laser-driven electron accelerator using crossed cylindrical laser focusing

Huang, Y. C., Byer, R. L.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 834 KB

english, 1996

35

Exciton dynamics in a novel high-yield GaInP quantum-wire array

Dua, P., Cooper, S. L., Chen, A. C., Cheng, K. Y.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 483 KB

english, 1996

36

Time-resolved picosecond optical nonlinearity and all-optical Kerr gate in poly (3-hexadecylthiophene)

Gomes, A. S. L., Demenicis, Luciene, Petrov, D. V., de Araújo, Cid B., de Melo, Celso P., Souto-Maior, Rosa

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 253 KB

english, 1996

37

Ti/MgO superlattices epitaxially grown on sapphire (00.1) and MgO(001) substrates

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 345 KB

english, 1996

38

SiC rapid thermal carbonization of the (111)Si semiconductor-on-insulator structure and subsequent metalorganic chemical vapor deposition of GaN

Steckl, A. J., Devrajan, J., Tran, C., Stall, R. A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 266 KB

english, 1996

39

Textured diamond growth by low pressure flat flame chemical vapor deposition

Wolden, C. A., Sitar, Z., Davis, R. F., Prater, J. T.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 378 KB

english, 1996

40

Movable-mask reactive ion etch process for thickness control in devices

Sandstrom, R. L., Pezeshki, B., Agahi, F., Martel, R., Crockett, J. G.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 418 KB

english, 1996

41

Interface states at ultrathin oxide/Si(111) interfaces obtained from x-ray photoelectron spectroscopy measurements under biases

Kobayashi, H., Yamashita, Y., Nakato, Y., Komeda, T., Nishioka, Y.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 367 KB

english, 1996

42

Time-resolved optical waveguide spectroscopy: Application to a study of the switching process of a nematic liquid crystal under the influence of an electric field

Mitsuishi, M., Ito, S., Yamamoto, M., Knoll, W.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 350 KB

english, 1996

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