Volume 69; Issue 16

Applied Physics Letters

Volume 69; Issue 16
5

Critical thickness of GaN thin films on sapphire (0001)

Year:
1996
Language:
english
File:
PDF, 251 KB
english, 1996
11

Surface reconstruction of zinc-blende GaN

Year:
1996
Language:
english
File:
PDF, 342 KB
english, 1996
14

Calculation of diamond chemical vapor deposition region in C–H–O phase diagram

Year:
1996
Language:
english
File:
PDF, 295 KB
english, 1996
16

Laser diodes in piezoelectric quantum-well structures

Year:
1996
Language:
english
File:
PDF, 321 KB
english, 1996
17

GaAs-based multiple quantum well tunneling injection lasers

Year:
1996
Language:
english
File:
PDF, 319 KB
english, 1996
18

Dielectric response process in relaxor ferroelectrics

Year:
1996
Language:
english
File:
PDF, 280 KB
english, 1996
23

Quasi-optical submillimeter-wave mixers with NbN/AlN/NbN tunnel junctions

Year:
1996
Language:
english
File:
PDF, 273 KB
english, 1996
25

Inversion domains in GaN grown on sapphire

Year:
1996
Language:
english
File:
PDF, 494 KB
english, 1996
26

N-type zinc phosphide grown by molecular beam epitaxy

Year:
1996
Language:
english
File:
PDF, 253 KB
english, 1996
29

Electroluminescence of epitaxial perylene films

Year:
1996
Language:
english
File:
PDF, 421 KB
english, 1996
32

Low-temperature synthesis of Ge nanocrystals in zeolite Y

Year:
1996
Language:
english
File:
PDF, 309 KB
english, 1996
33

Resonance fluorescence of a single molecule under near field excitation

Year:
1996
Language:
english
File:
PDF, 355 KB
english, 1996