Volume 69; Issue 2

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Applied Physics Letters
Volume 69; Issue 2

Applied Physics Letters

Volume 69; Issue 2

1

Combined magnetron sputtering and pulsed laser deposition of carbides and diamond-like carbon films

Voevodin, A. A., Capano, M. A., Safriet, A. J., Donley, M. S., Zabinski, J. S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 368 KB

english, 1996

2

Growth, transport, and magnetic properties of Pr0.67Ca0.33MnO3 thin films

Singh, S. K., Palmer, S. B., McK. Paul, D., Lees, M. R.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 259 KB

english, 1996

3

Raman shifts in Si nanocrystals

Zi, Jian, BuÌscher, H., Falter, C., Ludwig, W., Zhang, Kaiming, Xie, Xide

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 363 KB

english, 1996

4

Magnetostatic surface wave propagation in a yttrium iron garnet double layer

Voronko, A. I., Vetoshko, P. M., Volkovoy, V. B., Boardman, A. D., Boyle, J. W., Wallis, R. F.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 333 KB

english, 1996

5

Hydrogen-free amorphous carbon films approaching diamond prepared by magnetron sputtering

Logothetidis, S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 344 KB

english, 1996

6

A critical thickness condition for a strained compliant substrate/epitaxial film system

Freund, L. B., Nix, W. D.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 316 KB

english, 1996

7

On surface plasmons in porous silicon: Measurements of the electron energy loss in etched silicon nanocrystals

Sassaki, R. Massami, Galembeck, F., Teschke, O.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 384 KB

english, 1996

8

Erratum: ââAll-optical programmable AND gate implementation in a germanium-doped silica planar waveguideââ [Appl. Phys. Lett. 67, 3532 (1995)]

Ranon, P. M., Dajani, I., Kester, J. J., Alley, T. G.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 236 KB

english, 1996

9

Plasma beam deposited amorphous hydrogenated carbon: Improved film quality at higher growth rate

Gielen, J. W. A. M., van de Sanden, M. C. M., Schram, D. C.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 236 KB

english, 1996

10

Defect and transport properties of nanocrystalline CeO2−x

Chiang, Y.-M., Lavik, E. B., Kosacki, I., Tuller, H. L., Ying, J. Y.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 440 KB

english, 1996

11

Effect of adlayer dimer orientation on the optical anisotropy of single domain Si(001)

Power, J. R., Farrell, T., Gerber, P., Chandola, S., Weightman, P., McGilp, J. F.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 259 KB

english, 1996

12

Formation of quasicrystals in bulk glass forming Zr–Cu–Ni–Al alloys

U. Köster, J. Meinhardt, S. Roos, H. Liebertz

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 361 KB

english, 1996

13

Single mode Lamb wave excitation in thin plates by Hertzian contacts

F. L. Degertekin, B. T. Khuri-yakub

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 368 KB

english, 1996

14

Layered defective lanthanum titanate thin films prepared by pulsed laser ablation of potassium lanthanum titanate ceramics

Xiong, S. B., Ding, W. P., Liu, Z. G., Chen, X. Y., Guo, X. L., Yu, T., Zhu, Y. Y., Hu, W. S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 362 KB

english, 1996

15

Metal-insulator-semiconductor structures on p-type GaAs with low interface state density

Chen, Zhi, Park, Dae-Gyu, Stengal, Francke, Mohammad, S. Noor, Morkoç, Hadis

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 256 KB

english, 1996

16

Single-atom point contact devices fabricated with an atomic force microscope

Snow, E. S., Park, D., Campbell, P. M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 348 KB

english, 1996

17

Thermally induced charged carrier transfer and intersubband transitions in an asymmetrical coupled quantum well structure

Lavon, Y., Sa’ar, A., Wang, J., Leburton, J.-P., Julien, F. H., Planel, R.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 342 KB

english, 1996

18

Synthesis of carbon nanotubes from bulk polymer

Cho, Woo-Seok, Hamada, Etsuo, Kondo, Yukihito, Takayanagi, Kunio

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 562 KB

english, 1996

19

Lattice-matching SiC substrates with GaN

Ren, Shang Yuan, Dow, John D.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 311 KB

english, 1996

20

Preparation of epitaxial metallic LaNiO3 films on SrTiO3 by metalorganic decomposition for the oriented growth of PbTiO3

Li, Aidong, Ge, Chuanzhen, Lü, Peng, Ming, Naiben

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 509 KB

english, 1996

21

Time of flight photoelectron spectroscopy with a laser-plasma x-ray source

Kondo, Hiroyuki, Tomie, Toshihisa, Shimizu, Hideaki

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 315 KB

english, 1996

22

Heteroepitaxial growth of KNbO3 single-crystal films on SrTiO3 by metalorganic chemical vapor deposition

Onoe, Atsushi, Yoshida, Ayako, Chikuma, Kiyofumi

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 443 KB

english, 1996

23

Reliable operation of strain-compensated 1.06 μm InGaAs/InGaAsP/GaAs single quantum well lasers

Fukunaga, Toshiaki, Wada, Mitsugu, Hayakawa, Toshiro

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 324 KB

english, 1996

24

Lattice relaxation and pressure dependence of carbon and silicon impurity states in cubic boron nitride

Gubanov, V. A., Hemstreet, L. A., Fong, C. Y., Klein, Barry M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 360 KB

english, 1996

25

Color-variable electroluminescence from multilayer polymer films

Hamaguchi, Maki, Yoshino, Katsumi

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 307 KB

english, 1996

26

Synchrotron x-ray diffraction studies of the structural properties of electrode materials in operating battery cells

Thurston, T. R., Jisrawi, N. M., Mukerjee, S., Yang, X. Q., McBreen, J., Daroux, M. L., Xing, X. K.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 338 KB

english, 1996

27

Trimethylarsenic as an alternative to arsine in the metalorganic vapor phase epitaxy of device quality In0.53Ga0.47As/InP

Pautet, C., Abraham, P., Dazord, J., Favre, R., Cauwet, F., Monteil, Y., Bouix, J., Ougazzaden, A., Rao, E. V. K., Mircea, A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 311 KB

english, 1996

28

High field flashover strength of intrinsic gallium nitride and aluminum nitride in vacuum

Khan, M. A., Chen, O., Sudarshan, T. S., Gradinaru, G.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 326 KB

english, 1996

29

Rapid relaxation of hot carriers in GaAs fractional-layer superlattice quantum wires

Chavez-Pirson, A., Ando, H., Saito, H., Kobayashi, N., Kanbe, H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 336 KB

english, 1996

30

Angle etch control for silicon carbide power devices

Lanois, F., Lassagne, P., Planson, D., Locatelli, M. L.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 488 KB

english, 1996

31

Electron-beam induced crystallization transition in self-developing amorphous AlF3 resists

Chen, G. S., Boothroyd, C. B., Humphreys, C. J.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 461 KB

english, 1996

32

Passive pulse shaping of femtosecond pulses using birefringent dispersive media

Radzewicz, C., la Grone, M. J., Krasinski, J. S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 343 KB

english, 1996

33

Measurement of linear nanometric distances between smooth plane parallel bodies by scattered total internal reflection

Sides, Paul J., Lo, Jenny

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 313 KB

english, 1996

34

Heat to light energy conversion by emitters doped with rare-earth metal ions

Golovlev, V. V., Winston Chen, C. H., Garrett, W. R.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 333 KB

english, 1996

35

Enhanced diffusion in nonstoichiometric quantum wells and the decay of supersaturated vacancy concentrations

Lahiri, I., Nolte, D. D., Melloch, M. R., Woodall, J. M., Walukiewicz, W.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 255 KB

english, 1996

36

Orientational relationship among polyimide alignment layer, liquid crystal monolayer, and bulk pretilt angle

Shirota, Koichiro, Yaginuma, Michio, Sakai, Takahiro, Ishikawa, Ken, Takezoe, Hideo, Fukuda, Atsuo

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 689 KB

english, 1996

37

Optical gain and lasing in self-assembled InP/GaInP quantum dots

Moritz, A., Wirth, R., Hangleiter, A., Kurtenbach, A., Eberl, K.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 246 KB

english, 1996

38

In situ real-time study of chemical etching process of Si(100) using light scattering

Zhao, Y.-P., Wu, Y.-J., Yang, H.-N., Wang, G.-C., Lu, T.-M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 593 KB

english, 1996

39

Kinetic-energy measurement of a neutral stream extracted from Ar electron cyclotron resonance plasma

Tsuchizawa, Tai, Jin, Yoshito, Matsuo, Seitaro

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 246 KB

english, 1996

40

The molecular beam epitaxial growth of InSb on (111)B GaAs

Michel, E., Kim, J. D., Javadpour, S., Xu, J., Ferguson, I., Razeghi, M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 248 KB

english, 1996

41

Electronic and structural properties of GaN grown by hydride vapor phase epitaxy

Götz, W., Romano, L. T., Krusor, B. S., Johnson, N. M., Molnar, R. J.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 348 KB

english, 1996

42

Strain-modulated epitaxy: A flexible approach to 3-D band structure engineering without surface patterning

Carter-Coman, Carrie, Brown, April S., Bicknell-Tassius, Robert, Jokerst, Nan Marie, Allen, Mark

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 412 KB

english, 1996

43

Heterodyne detection of THz radiation with a superconducting hot-electron bolometer mixer

Semenov, A. D., Gousev, Yu. P., Nebosis, R. S., Renk, K. F., Yagoubov, P., Voronov, B. M., Gol’tsman, G. N., Syomash, V. D., Gershenzon, E. M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 308 KB

english, 1996

44

Electroluminescence from triplet excited states of benzophenone

Hoshino, Satoshi, Suzuki, Hiroyuki

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 317 KB

english, 1996

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