Volume 69; Issue 4

Applied Physics Letters

Volume 69; Issue 4
3

Transient terahertz reflection spectroscopy of undoped InSb from 0.1 to 1.1 THz

Year:
1996
Language:
english
File:
PDF, 310 KB
english, 1996
4

Gallium vacancies and the yellow luminescence in GaN

Year:
1996
Language:
english
File:
PDF, 281 KB
english, 1996
8

Laser-plasma interaction during visible-laser ablation of methods

Year:
1996
Language:
english
File:
PDF, 481 KB
english, 1996
10

Nanocrystallites in tetrahedral amorphous carbon films

Year:
1996
Language:
english
File:
PDF, 422 KB
english, 1996
12

Defects and degradation in ZnO varistor

Year:
1996
Language:
english
File:
PDF, 300 KB
english, 1996
21

Photoinduced synthesis of amorphous SiO2 with tetramethoxysilane

Year:
1996
Language:
english
File:
PDF, 325 KB
english, 1996
22

Infrared spectroscopy study of the Si–SiO2 interface

Year:
1996
Language:
english
File:
PDF, 455 KB
english, 1996
23

Different epitaxial growth modes of Bi2Sr2Ca2Cu3Ox on MgO

Year:
1996
Language:
english
File:
PDF, 426 KB
english, 1996
26

Picosecond relaxation and thermal diffusion in amorphous silicon

Year:
1996
Language:
english
File:
PDF, 265 KB
english, 1996
27

Passivation of Si(111)-7×7 by a C60 monolayer

Year:
1996
Language:
english
File:
PDF, 481 KB
english, 1996
31

Ion assisted growth of diamond

Year:
1996
Language:
english
File:
PDF, 579 KB
english, 1996
32

The removal of nitrogen during boron indiffusion in silicon gate oxynitrides

Year:
1996
Language:
english
File:
PDF, 238 KB
english, 1996
36

Investigation of charge carrier injection in silicon nitride/silicon junctions

Year:
1996
Language:
english
File:
PDF, 255 KB
english, 1996
42

The driving force of Si adsorbate transfer on a Si(001) surface

Year:
1996
Language:
english
File:
PDF, 529 KB
english, 1996