Volume 69; Issue 8

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Applied Physics Letters
Volume 69; Issue 8

Applied Physics Letters

Volume 69; Issue 8

1

Novel quantum box intersubband lasing mechanism based on image charges

Lee, S. J., Khurgin, J. B.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 352 KB

english, 1996

2

Two‐dimensional electro‐optic imaging of THz beams

Wu, Q., Hewitt, T. D., Zhang, X.‐C.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 309 KB

english, 1996

3

A low-noise single-domain fluxgate sensor

Deak, J., Miklich, A. H., Slonczewski, J., Koch, R. H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 368 KB

english, 1996

4

Studies of MoS2 structures produced by electron irradiation

JoseÌ-YacamaÌn, M., LoÌpez, H., Santiago, P., GalvaÌn, D. H., GarzoÌn, I. L., Reyes, A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 657 KB

english, 1996

5

Quenching of the spontaneous current oscillations in GaAs/AlAs superlattices under domain formation

Zhang, Yaohui, Klann, Robert, Ploog, Klaus H., Grahn, Holger T.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 63 KB

english, 1996

6

Deposition of diamond-like carbon films by electrolysis of methanol solution

Wang, Hao, Shen, Ming-Rong, Ning, Zhao-Yuan, Ye, Chao, Cao, Chuan-Bao, Dang, Hai-Yan, Zhu, He-Sun

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 302 KB

english, 1996

7

Energy level bending and alignment at the interface between Ca and a phenylene vinylene oligomer

Park, Y., Choong, V., Ettedgui, E., Gao, Y., Hsieh, B. R., Wehrmeister, T., Müllen, K.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 311 KB

english, 1996

8

Polysiloxane-based photorefractive polymers for digital holographic data storage

Poga, C., Lundquist, P. M., Lee, V., Shelby, R. M., Twieg, R. J., Burland, D. M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 298 KB

english, 1996

9

Growth temperature dependence of long-range alloy order and magnetic properties of epitaxial FexPt1−x (x≂0.5) films

R. F. C. Farrow, D. Weller, R. F. Marks, M. F. Toney, S. Hom, G. R. Harp, A. Cebollada

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 465 KB

english, 1996

10

Elasto-optic anisotropy and polarization orientation of vertical-cavity surface-emitting semiconductor lasers

Jansen van Doorn, A. K., van Exter, M. P., Woerdman, J. P.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 308 KB

english, 1996

11

Pulsed laser deposition of SBN:75 thin films with electro-optic coefficient of 844 pm/V

Tayebati, Parviz, Trivedi, Dhrupad, Tabat, Martin

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 335 KB

english, 1996

12

Formation of coherent superdots using metal-organic chemical vapor deposition

Ledentsov, N. N., Böhrer, J., Bimberg, D., Kochnev, I. V., Maximov, M. V., Kop’ev, P. S., Alferov, Zh. I., Kosogov, A. O., Ruvimov, S. S., Werner, P., Gösele, U.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 763 KB

english, 1996

13

Three-dimensional image interaction for nonsmooth emitters

Mesa, G., Sáenz, J. J.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 365 KB

english, 1996

14

Inductively coupled plasma etching of GaN

Shul, R. J., McClellan, G. B., Casalnuovo, S. A., Rieger, D. J., Pearton, S. J., Constantine, C., Barratt, C., Karlicek, R. F., Tran, C., Schurman, M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 369 KB

english, 1996

15

Effects of the oxidation process on the electrical characteristics of oxidized nitride films

Mazumder, M. K., Katayama, T., Kobayashi, K., Mashiko, Y., Koyama, H., Yasuoka, A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 313 KB

english, 1996

16

Photoexcited carrier dynamics in InAlGaAs/InP quantum well laser structures

Marcinkevičius, S., Hillmer, H., Lösch, R., Olin, U.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 315 KB

english, 1996

17

Low-threshold picosecond optical parametric oscillation in quasi-phase-matched lithium niobate

Pruneri, V., Butterworth, S. D., Hanna, D. C.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 321 KB

english, 1996

18

Formation of semi-insulating 6H-SiC layers by vanadium ion implantations

Kimoto, T., Nakajima, T., Matsunami, H., Nakata, T., Inoue, M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 337 KB

english, 1996

19

Open boundary conditions for a time-dependent analysis of the resonant tunneling structure

Talebian, M. A., Pötz, W.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 373 KB

english, 1996

20

Study of CoCrPt/NiAl thin films on (001) MgO single crystals

Tang, L., Lee, L.-L., Laughlin, D. E., Lambeth, D. N.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 447 KB

english, 1996

21

Free versus localized exciton recombination in Zn1−xCdxSe/ZnSe multiple quantum wells

Lomascolo, M., Di Dio, M., Greco, D., Calcagnile, L., Cingolani, R., Vanzetti, L., Sorba, L., Franciosi, A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 334 KB

english, 1996

22

Electronic diffusivity measurement in silicon by photothermal microscopy

Forget, Benoi^t C., Barbereau, Isabelle, Fournier, Danièle, Tuli, Suneet, Battacharyya, Amalendu B.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 334 KB

english, 1996

23

Direct observation of hydrogen-related luminescent states in subsurface region of homoepitaxial diamond films

Hayashi, Kazushi, Watanabe, Hideyuki, Yamanaka, Sadanori, Okushi, Hideyo, Kajimura, Koji, Sekiguchi, Takashi

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 247 KB

english, 1996

24

Transport properties and giant magnetoresistance behavior in La-Nd-Sr-Mn-O films

Zhang, Wei, Boyd, Ian W., Elliott, Martin, Herrenden-Harkerand, William

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 247 KB

english, 1996

25

Enhancement of the magnetoresistance due to structural transition in Mg-doped perovskite Mn oxides

Anane, A., Dupas, C., Le Dang, K., Renard, J. P., Veillet, P., Pinsard, L., Revcolevschi, A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 264 KB

english, 1996

26

Surface morphology of homoepitaxial silicon thin films grown using energetic supersonic jets of disilane

Pacheco, K. A., Ferguson, B. A., Banerjee, S., Mullins, C. B.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 347 KB

english, 1996

27

Preparation of wide band gap microcrystalline silicon film by using SiH2Cl2

Ki Kim, Sung, Yeon Moon, Byeong, Seong Byun, Jae, Bin Jeon, Hong, Jang, Jin

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 392 KB

english, 1996

28

CCl4-doped semi-insulating InP as a buffer layer in GaInAs/InP high electron mobility transistors

Hsu, C. C., Yang, Y. F., Ou, H. J., Yang, E. S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 334 KB

english, 1996

29

Self-induced persistent photoconductivity in resonant tunneling devices

Neves, B. R. A., Alves, E. S., Sampaio, J. F., de Oliveira, A. G., Moreira, M. V. B.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 256 KB

english, 1996

30

X-ray reflectivity determination of interface roughness correlated with transport properties of (AlGa)As/GaAs high electron mobility transistor devices

Dura, J. A., Pellegrino, J. G., Richter, C. A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 264 KB

english, 1996

31

Photodecay mechanisms in side chain nonlinear optical polymethacrylates

Vydra, Jan, Beisinghoff, Hanno, Tschudi, Theo, Eich, Manfred

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 626 KB

english, 1996

32

Self-consistent modeling of accumulation layers and tunneling currents through very thin oxides

Rana, Farhan, Tiwari, Sandip, Buchanan, D. A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 270 KB

english, 1996

33

Correlation between two dielectric breakdown mechanisms in ultra-thin gate oxides

Satake, Hideki, Yasuda, Naoki, Takagi, Shin-ichi, Toriumi, Akira

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 253 KB

english, 1996

34

Defect characterization of etch pits in ZnSe based epitaxial layers

U’Ren, G. D., Goorsky, M. S., Meis-Haugen, G., Law, K. K., Miller, T. J., Haberern, K. W.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 503 KB

english, 1996

35

Stability of hot-wire deposited amorphous-silicon thin-film transistors

Meiling, H., Schropp, R. E. I.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 248 KB

english, 1996

36

Effect of CeO2 interlayer deposition temperature on growth behavior of Bi4Ti3O12/CeO2/MgO heterostructures

Jo, W., Park, G. W., Kim, D. W., Noh, T. W.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 270 KB

english, 1996

37

Lomer–Cottrell misfit dislocations in [001] In0.2Ga0.8As/GaAs single heterostructures

Zou, J., Cockayne, D. J. H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 323 KB

english, 1996

38

Effects of electron temperature in high-density Cl2 plasma for precise etching processes

Samukawa, Seiji, Tsukada, Tsutomu

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 243 KB

english, 1996

39

Polymeric light-emitting diodes from molecularly thin poly(3-hexylthiophene) Langmuir–Blodgett films

Pal, A. J., Östergård, T., Paloheimo, J., Stubb, H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 304 KB

english, 1996

40

Kinetics of epitaxial Si1−xGex growth using SiH2Cl2–GeH4–H2 mixture in reduced-pressure chemical vapor deposition

Ito, S., Nakamura, T., Nishikawa, S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 340 KB

english, 1996

41

Structural modeling of the possible growth of oriented textured single-crystal diamond film on a silicon (111) surface

Zhang, R. Q., Wang, W. L., Esteve, J., Bertran, E.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 398 KB

english, 1996

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